Public consciousness and willingness to embrace ethical consumption of textile products in Mexico

The Mexican economy has been showing a continuous and arguably remarkable growth in the last decade, and it is expected that this strong economic growth is based on a balance between social equity, fiscal growth and environmental protection. This composite situation requires us to have a clear understanding of changes in consumer behaviour and their attitudes towards ethical consumerism in this region. With the use of a semi-structured questionnaire, this pilot study presented a detailed analysis of the consumer attitudes towards ethical consumerism in relation to their socio economic class levels in this region, the public consciousness and willingness to embrace ethical consumption of textile products in Mexico were thus determined. It is hoped that this knowledge provides the basis for the initiation of a framework of activities and measures to develop sustainable consumption habits and to educate consumers on the subject of ethical consumption

MultiCAD - MOGA a System for Conceptual Style Design of Buildings

The synthesis of the three-dimensional morphology of a building is one of the most important tasks in architecture. Space planning and morphology are of the most interesting and complex of architectural design problems. Architectural design is guided by the constraints on the spatial composition and the morphology of the final building. During the conceptual phase problems are characterised by fuzziness and complexity. Building requirements are ill-defined and contradictory. The designer should explore the solution space for alternative building solutions while refining requirements and style preferences. In this paper we present the development and implementation of an Evolutionary Declarative Design system prototype for the aid of conceptual style design of buildings. The system is a specific MultiCAD prototype system including architectural knowledge, architectural style and a multi-objective genetic algorithm. Two design cases are presented for two different architectural styles. The applicability and efficiency of the system prototype are discussed

Transient and spatial radiative properties of patterned wafers during rapid thermal processing

Temperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity

Inelastic effects in a thermoplastic adhesive used for bonding a diamond disk

A 1-in.-diam polished diamond disk was bonded to a disk of zinc sulfide (ZnS) using a high-temperature thermoplastic adhesive to form an optical structure that may be used for infrared applications. A postbonding thermal-stress-induced deformation in the structure at room temperature was observed to decrease exponentially over time. This curvature decrease may be attributed to viscoelastic stress relaxation within the adhesive layer. The relaxation behavior of the adhesive layer was characterized over a range of temperatures above room temperature by observing curvature changes in the structure heated to these temperatures. This characterization has led to knowledge of the deformational behavior of this structure during manufacturing and service conditions. In addition, relaxation and approximate physical properties of the adhesive were extracted from the observed behavior. © 1996 Society of Photo-Optical Instrumentation Engineers

Transient and spatial radiative properties of patterned wafers during rapid thermal processing

Temperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity

Prediction of elastic strains in adhesively bonded diamond optical disks

An elastic strain numerical model was used to predict the stresses, radius of curvature and deflection of thick diamond films bonded at elevated temperatures to silicon, germanium and zinc sulphide substrates. A range of bonding temperatures from 100 to 350°C and diamond to substrate thickness ratios from 0·001 to 0·5 was modelled. The thermal stresses throughout the structure after bonding are shown for each theoretical condition. Also, the edge to centre deflection caused by thermal stresses is reported for each bonding condition. When bonding thick diamond films at higher temperatures, the stresses within the Ge and ZnS substrates were predicted to exceed their rupture strengths

Prediction of elastic strains in adhesively bonded diamond optical disks

An elastic strain numerical model was used to predict the stresses, radius of curvature and deflection of thick diamond films bonded at elevated temperatures to silicon, germanium and zinc sulphide substrates. A range of bonding temperatures from 100 to 350°C and diamond to substrate thickness ratios from 0·001 to 0·5 was modelled. The thermal stresses throughout the structure after bonding are shown for each theoretical condition. Also, the edge to centre deflection caused by thermal stresses is reported for each bonding condition. When bonding thick diamond films at higher temperatures, the stresses within the Ge and ZnS substrates were predicted to exceed their rupture strengths

Viscoelastic deformation during thermal cycling of adhesively bonded optical coatings

Temperature-dependent structural deformation in bonded optical materials and dielectric layers has been investigated. Structures of silicon, zinc sulfide, and diamond disks bonded to each other by a thin film of thermoplastic wax adhesive have undergone low-temperature thermal cycling in order to simulate service environments. The deformation, which may adversely affect optical properties of sensitive optical coatings, was measured as a function of temperature and time. An expected amount of elastic deformation due to thermal stresses was numerically modeled for the structures and compared to the actual observed behavior. At temperatures greater than an elastic/inelastic threshold of the adhesive layer, an irreversible deformation within all structures was observed in which the deformation deviated from the numerical elastic model. The viscoelastic behavior within the adhesive film proved to have a significant effect on the deformation of the structure and would consequently affect the optical properties of the device

Effect of substrate temperature on the crystallinity and stress of ion beam sputtered silicon on various substrates

The effect of substrate temperature on the crystallinity and stress of ion beam sputtered silicon on various substrates was studied. Silicon films were deposited on silicon, germanium and glass substrates at temperatures as low as 350-400 °C and their crystallization properties on the different substrate surfaces were analyzed using X-ray diffraction. The polycrystalline films were shown to be thermally stable, have randomly oriented crystals, and have good adhesion to the substrates. The study demonstrated the feasibility of depositing extremely hard polycrystalline silicon films on germanium and other substrates by means of physical vapor deposition at temperatures as low as 350 °C