Doping Evolution of Magnetic Order and Magnetic Excitations in (Sr1−x_{1-x}Lax_x)3_3Ir2_2O7_7

We use resonant elastic and inelastic X-ray scattering at the Ir-$L_3$ edge to study the doping-dependent magnetic order, magnetic excitations and spin-orbit excitons in the electron-doped bilayer iridate (Sr$_{1-x}$La$_{x}$)$_3$Ir$_2$O$_7$ ($0 \leq x \leq 0.065$). With increasing doping $x$, the three-dimensional long range antiferromagnetic order is gradually suppressed and evolves into a three-dimensional short range order from $x = 0$ to $0.05$, followed by a transition to two-dimensional short range order between $x = 0.05$ and $0.065$. Following the evolution of the antiferromagnetic order, the magnetic excitations undergo damping, anisotropic softening and gap collapse, accompanied by weakly doping-dependent spin-orbit excitons. Therefore, we conclude that electron doping suppresses the magnetic anisotropy and interlayer couplings and drives (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ into a correlated metallic state hosting two-dimensional short range antiferromagnetic order and strong antiferromagnetic fluctuations of $J_{\text{eff}} = \frac{1}{2}$ moments, with the magnon gap strongly suppressed.Comment: 6 Pages, 3 Figures, with supplementary in Sourc

Diagnostics and control of wavenumber stability and purity of tunable diode lasers relevant to their use as local oscillators in heterodyne systems

Initial operation of the tunable diode lasers (TDL) showed that it was not possible to adjust the wavenumber to one selected a priori in the TDL tuning range. During operation, the operating point would change by 0.1/cm over the longer term with even larger changes occurring during some thermal cycles. Most changes during thermal cycling required using lower temperatures and higher currents to reach the former wavenumber (when it could be reached). In many cases, an operating point could be selected by changing TDL current and temperature to give both the desired wavenumber and most of the power in a single mode. The selection procedure had to be used after each thermal cycling. Wavenumber nonlinearities of about 10% over a 0.5 cm tuning range were observed. Diagnostics of the single mode selected by a grating monochromator showed wavenumber fine structure under certain operating conditions. The characteristics due to the TDL environment included short term wavenumber stability, the instrument lineshape function, and intermediate term wavenumber stability

Two- and Three-Phase Flow Through a 90 Degree Bend

Data are presented for two-phase air/water pipeflow and three-phase air/oil/water in a 0.026 m i.d. pipe and elbow bend (R/d = 0.654) for vertical to horizontal flow. The two-phase results were shown to be dependant on the flow regimes present in the system. The elbow bend acted either to smooth the transition from vertical to horizontal flow when the liquid rate was below the bubble rise velocity in the inlet leg (when negative bend pressure losses were achieved), or to generate droplets and increase the bend pressure drop substantially at higher fluid rates.Three-phase data also showed significant but not such dramatic differences, depending on the combined liquid rate being above or below the bubble rise velocity in the inlet leg. Again the variation of pressure drop for the system could be qualitatively explained by the observed flow regimes.For both two-phase and three-phase systems, the observed bend pressure drop could be correlated using a Lockhart-Martinelli approach based on the single-phase flow data for the bend

Electronic and magnetic excitations in the "half-stuffed" Cu--O planes of Ba2_2Cu3_3O4_4Cl2_2 measured by resonant inelastic x-ray scattering

We use resonant inelastic x-ray scattering (RIXS) at the Cu L$_3$ edge to measure the charge and spin excitations in the "half-stuffed" Cu--O planes of the cuprate antiferromagnet Ba$_2$Cu$_3$O$_4$Cl$_2$. The RIXS line shape reveals distinct contributions to the $dd$ excitations from the two structurally inequivalent Cu sites, which have different out-of-plane coordinations. The low-energy response exhibits magnetic excitations. We find a spin-wave branch whose dispersion follows the symmetry of a CuO$_2$ sublattice, similar to the case of the "fully-stuffed" planes of tetragonal CuO (T-CuO). Its bandwidth is closer to that of a typical cuprate material, such as Sr$_2$CuO$_2$Cl$_2$, than it is to that of T-CuO. We interpret this result as arising from the absence of the effective four-spin inter-sublattice interactions that act to reduce the bandwidth in T-CuO.Comment: 10 pages, 8 figure

Evaluational adjectives

This paper demarcates a theoretically interesting class of "evaluational adjectives." This class includes predicates expressing various kinds of normative and epistemic evaluation, such as predicates of personal taste, aesthetic adjectives, moral adjectives, and epistemic adjectives, among others. Evaluational adjectives are distinguished, empirically, in exhibiting phenomena such as discourse-oriented use, felicitous embedding under the attitude verb `find', and sorites-susceptibility in the comparative form. A unified degree-based semantics is developed: What distinguishes evaluational adjectives, semantically, is that they denote context-dependent measure functions ("evaluational perspectives")—context-dependent mappings to degrees of taste, beauty, probability, etc., depending on the adjective. This perspective-sensitivity characterizing the class of evaluational adjectives cannot be assimilated to vagueness, sensitivity to an experiencer argument, or multidimensionality; and it cannot be demarcated in terms of pretheoretic notions of subjectivity, common in the literature. I propose that certain diagnostics for "subjective" expressions be analyzed instead in terms of a precisely specified kind of discourse-oriented use of context-sensitive language. I close by applying the account to `find x PRED' ascriptions

Highly conductive Sb-doped layers in strained Si

The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor device