94 research outputs found
Antiferroquadrupolar Order in the Magnetic Semiconductor TmTe
The physical properties of the antiferroquadrupolar state occurring in TmTe
below TQ=1.8 K have been studied using neutron diffraction in applied magnetic
fields. A field-induced antiferromagnetic component k = (1/2,1/2,1/2) is
observed and, from its magnitude and direction for different orientations of H,
an O(2,2) quadrupole order parameter is inferred. Measurements below TN ~= 0.5
K reveal that the magnetic structure is canted, in agreement with theoretical
predictions for in-plane antiferromagnetism. Complex domain repopulation
effects occur when the field is increased in the ordered phases, with
discontinuities in the superstructure peak intensities above 4 T.Comment: 6 pages, 6 figures, Presented at the International Conference on
Strongly Correlated Electrons with Orbital Degrees of Freedom (ORBITAL 2001),
September 11-14, 2001 (Sendai, JAPAN). To appear in: Journal of the Physical
Society of Japan (2002
Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}
The colossal magnetoresistance exhibited by Tl_{2}Mn_{2}O_{7} is an
interesting phenomenon, as it is very similar to that found in perovskite
manganese oxides although the compound differs both in its crystalline
structure and electronic properties from the manganites. At the same time,
other pyrochlore compounds, though sharing the same structure with
Tl_{2}Mn_{2}O_{7}, do not exhibit the strong coupling between magnetism and
transport properties found in this material. Mostly due to the absence of
evidence for significant doping into the Mn-O sublattice, and the tendency of
Tl to form conduction bands, the traditional double exchange mechanism
mentioned in connection with manganites does not seem suitable to explain the
experimental results in this case. We propose a model for Tl_{2}Mn_{2}O_{7}
consisting of a lattice of intermediate valence ions fluctuating between two
magnetic configurations, representing Mn-3d orbitals, hybridized with a
conduction band, which we associate with Tl. This model had been proposed
originally for the analysis of intermediate valence Tm compounds. With a
simplified treatment of the model we obtain the electronic structure and
transport properties of Tl_{2}Mn_{2}O_{7}, with good qualitative agreement to
experiments. The presence of a hybridization gap in the density of states seems
important to understand the reported Hall data.Comment: 8 pages + 5 postscript fig
Microscopic theory of quadrupolar ordering in TmTe
We have calculated the crystal electric field of TmTe (T>T_Q) and have
obtained that the ground state of a Tm 4f hole is the doublet in
agreement with Mossbauer experiments. We study the quadrupole interactions
arising from quantum transitions of 4f holes of Tm. An effective attraction is
found at the L point of the Brillouin zone, . Assuming that the
quadrupolar condensation involves a single arm of we show that
there are two variants for quadrupole ordering which are described by the space
groups C2/c and C2/m. The Landau free energy is derived in mean-field theory.
The phase transition is of second order. The corresponding quadrupole order
parameters are combinations of and components. The obtained
domain structure is in agreement with observations from neutron diffraction
studies for TmTe. Calculated lattice distortions are found to be different for
the two variants of quadrupole ordering. We suggest to measure lattice
displacements in order to discriminate between those two structures.Comment: 10 pages, 2 figures, 5 tables; accepted by PR
The combination of CHK1 inhibitor with G-CSF overrides cytarabine resistance in human acute myeloid leukaemia
Cytarabine (AraC) represents the most effective single agent treatment for AML. Nevertheless, overriding AraC resistance in AML remains an unmet medical need. Here we show that the CHK1 inhibitor (CHK1i) GDC-0575 enhances AraC-mediated killing of AML cells both in vitro and in vivo, thus abrogating any potential chemoresistance mechanisms involving DNA repair. Importantly, this combination of drugs does not affect normal long-term hematopoietic stem/progenitors. Moreover, the addition of CHK1i to AraC does not generate de novo mutations and in patients' samples where AraC is mutagenic, addition of CHK1i appears to eliminate the generation of mutant clones. Finally, we observe that persistent residual leukemic cells are quiescent and can become responsive to the treatment when forced into cycle via granulocyte colony-stimulating factor (G-CSF) administration. This drug combination (AraC+CHK1i+G-CSF) will open the doors for a more efficient treatment of AML in the clinic
Osteoclasts control reactivation of dormant myeloma cells by remodelling the endosteal niche
Multiple myeloma is largely incurable, despite development of therapies that target myeloma cell-intrinsic pathways. Disease relapse is thought to originate from dormant myeloma cells, localized in specialized niches, which resist therapy and repopulate the tumour. However, little is known about the niche, and how it exerts cell-extrinsic control over myeloma cell dormancy and reactivation. In this study, we track individual myeloma cells by intravital imaging as they colonize the endosteal niche, enter a dormant state and subsequently become activated to form colonies. We demonstrate that dormancy is a reversible state that is switched ‘on’ by engagement with bone-lining cells or osteoblasts, and switched ‘off’ by osteoclasts remodelling the endosteal niche. Dormant myeloma cells are resistant to chemotherapy that targets dividing cells. The demonstration that the endosteal niche is pivotal in controlling myeloma cell dormancy highlights the potential for targeting cell-extrinsic mechanisms to overcome cell-intrinsic drug resistance and prevent disease relapse
Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal / oxide / semiconductor junction
International audienc
Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal / oxide / semiconductor junction
International audienc
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