Detection of charge motion in a non-metallic silicon isolated double quantum dot

As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single electron transistor, both fabricated from highly phosphorous doped silicon wafers. Despite, the absence of a direct charge transfer between the detector and the double dot structure, an efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. Results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the single electron transistor dot

Local Unitary Quantum Cellular Automata

In this paper we present a quantization of Cellular Automata. Our formalism is based on a lattice of qudits, and an update rule consisting of local unitary operators that commute with their own lattice translations. One purpose of this model is to act as a theoretical model of quantum computation, similar to the quantum circuit model. It is also shown to be an appropriate abstraction for space-homogeneous quantum phenomena, such as quantum lattice gases, spin chains and others. Some results that show the benefits of basing the model on local unitary operators are shown: universality, strong connections to the circuit model, simple implementation on quantum hardware, and a wealth of applications.Comment: To appear in Physical Review