Annealing studies of visible light emission from silicon nanocrystals produced by implantation

The annealing behavior of silicon implanted SiO{sub 2} layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 {degrees}C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 {mu}s - 0.3 ms)

Design and screening of highly reliable 980nm pump lasers

Presents a design and screening approach that can be adopted to improve reliability of high-power 980-nm semiconductor lasers. Flared-ridge waveguide chips were realized on GRIN-SCH single-quantum-well structures. Without any screening, flared devices, thanks to the reduced peak power and current density, showed a 20% reduction in failure rate with respect to devices with straight waveguide. By adopting extended screening criteria, a more reliable population was selected, showing a reduction by a factor of two in the failure rate extrapolated at standard operating conditions

Intersubband relaxation time for In[sub x]Ga[sub 1−x]As/AlAs quantum wells with large transition energy

Intersubband relaxation time for InxGa1-xAs/AlAs multiple quantum wells presenting a large transition energy (680 meV) is measured by means of pump and probe experiments. Differential transmission decays in about 10 ps. The possible influence of intrasubband relaxation and Γ–X coupling on intersubband decay is discussed