Inelastic electron relaxation rates caused by Spin M/2 Kondo Impurities

We study a spin S=M/2--Kondo system coupled to electrons in an arbitrary nonequilibrium situation above Kondo temperature. Coupling to hot electrons leads to an increased inverse lifetime of pseudo particles, related to the Korringa width. This in turn is responsible for the increased inelastic relaxation rates of the electronic system. The rates are related to spin--spin correlation functions which are determined using a projection operator formalism. The results generalize recent findings for S=1/2--Kondo impurities which have been used to describe energy relaxation experiments in disordered mesoscopic wires.Comment: Brief Report, 4 page

Charge Fluctuations in the Single Electron Box

Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance. Near the degeneracy point where the energy of two charge states coincides, the perturbative approach fails, and we explicitly resum the leading logarithmic divergencies to all orders. The predictions for zero temperature are compared with Monte Carlo data and with recent renormalization group results. While good agreement between the third order result and numerical data justifies the perturbative approach in most of the parameter regime relevant experimentally, near the degeneracy point and at zero temperature the resummation is shown to be insufficient to describe strong tunneling effects quantitatively. We also determine the charge noise spectrum employing a projection operator technique. Former perturbative and semiclassical results are extended by the approach.Comment: 20 pages, 15 figure

Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength

We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo techniques and the conductance is determined from the Kubo formula. A regularized singular value decomposition scheme is employed to calculate the conductance from imaginary time simulation data. Our findings are shown to bridge between available analytical results in the semiclassical and perturbative limits and are found to explain recent experimental results in a regime not accessible by earlier methods.Comment: 4 pages, 2 figure

Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations

We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a direct measurement of the parallel conductance and no ad hoc assumptions on the symmetry of the transistors are necessary. Thus we can make a comparison between our data and theoretical predictions without any adjustable parameter. Even for rather weakly conducting transistors significant deviations from the perturbative results are noted. On the other hand, path integral Monte Carlo calculations show remarkable agreement with experiments for the whole range of temperatures and conductances.Comment: 8 pages, 7 figures, revtex4, corrected typos, submitted to PR

High Temperature Conductance of the Single Electron Transistor

The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and found to explain recent experimental data.Comment: 4 pages, 2 figure

Coulomb Charging Effects for Finite Channel Number

We consider quantum fluctuations of the charge on a small metallic grain caused by virtual electron tunneling to a nearby electrode. The average electron number and the effective charging energy are determined by means of perturbation theory in the tunneling Hamiltonian. In particular we discuss the dependence of charging effects on the number N of tunneling channels. Earlier results for N>>1 are found to be approached rather rapidly with increasing N.Comment: 6 pages, 5 figure

Effect of the Tunneling Conductance on the Coulomb Staircase

Quantum fluctuations of the charge in the single electron box are investigated. The rounding of the Coulomb staircase caused by virtual electron tunneling is determined by perturbation theory up to third order in the tunneling conductance and compared with precise Monte Carlo data computed with a new algorithm. The remarkable agreement for large conductance indicates that presently available experimental data on Coulomb charging effects in metallic nanostructures can be well explained by finite order perturbative results.Comment: 4 pages, 5 figure

Self-Energy Correction to the Two-Photon Decay Width in Hydrogenlike Atoms

We investigate the gauge invariance of the leading logarithmic radiative correction to the two-photon decay width in hydrogenlike atoms. It is shown that an effective treatment of the correction using a Lamb-shift "potential" leads to equivalent results in both the length as well as the velocity gauges provided all relevant correction terms are taken into account. Specifically, the relevant radiative corrections are related to the energies that enter into the propagator denominators, to the Hamiltonian, to the wave functions, and to the energy conservation condition that holds between the two photons; the form of all of these effects is different in the two gauges, but the final result is shown to be gauge invariant, as it should be. Although the actual calculation only involves integrations over nonrelativistic hydrogenic Green functions, the derivation of the leading logarithmic correction can be regarded as slightly more complex than that of other typical logarithmic terms. The dominant radiative correction to the 2S two-photon decay width is found to be -2.020536 (alpha/pi) (Zalpha)^2 ln[(Zalpha)^-2] in units of the leading nonrelativistic expression. This result is in agreement with a length-gauge calculation [S. G. Karshenboim and V. G. Ivanov, e-print physics/9702027], where the coefficient was given as -2.025(1).Comment: 9 pages, RevTe

Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 k$\Omega$. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, $V_{1/2}$, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, $\Delta V_{1/2}$, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, $\Delta G$. The constant of proportionality is a function of the ratio of the junction and quantum resistances, $R/R_{\rm q}$, and it is a pure strong tunneling effect.Comment: LaTeX file + five postscript figure

Electron transport through interacting quantum dots

We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real time path integral techniques with the scattering matrix approach we derive the effective action and evaluate the current-voltage characteristics of quantum dots at sufficiently large conductances. Our analysis reveals a reach variety of different regimes which we specify in details for the case of chaotic quantum dots. At sufficiently low energies the interaction correction to the current depends logarithmically on temperature and voltage. We identify two different logarithmic regimes with the crossover between them occurring at energies of order of the inverse dwell time of electrons in the dot. We also analyze the frequency-dependent shot noise in chaotic quantum dots and elucidate its direct relation to interaction effects in mesoscopic electron transport.Comment: 21 pages, 4 figures. References added, discussion slightly extende