Deep UV image processing for 0.35 micron lithography in production JESSI subprogramme equipment and materials technology

For deep UV image processing in lithography for chip production a stable resist process was developed based on the SUCCESS resist concept of the joint European project 'JESSI E 162'. Starting from poly(p-hydroxystyrene) the formulation of delay-stable positive photoresists with good resolution capabilities and dry-etch resistance was obtained by applying additives against T-topping and by adjusting the protective group chemistry for linewidth stability. The major achievements are: linewidth stability for #>=# 0.35 #mu#m lines during delay times up to 120 min between exposure and post-exposure bake, 0.24 #mu#m lines stable for 30 min, linearity down to 0.35 #mu#m, resolution of 0.22 #mu#m with phase-shift mask, dry etch resistance better than conventional novolac resists. Chemically amplified resists have been modelled using the effective acid concept. (WEN)Available from TIB Hannover: F96B272+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman