Spin Effects in a Quantum Ring

Recent experiments are reviewed that explore the spin states of a ring-shaped many-electron quantum dot. Coulomb-blockade spectroscopy is used to access the spin degree of freedom. The Zeeman effect observed for states with successive electron number allows to select possible sequences of spin ground states of the ring. Spin-paired orbital levels can be identified by probing their response to magnetic fields normal to the plane of the ring and electric fields caused by suitable gate voltages. This narrows down the choice of ground-state spin sequences. A gate-controlled singlet--triplet transition is identified and the size of the exchange interaction matrix element is determined.Comment: 13 pages, 3 figures, Proceedings of the QD2004 conference in Banf

Transport properties of quantum dots with hard walls

Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. We find that in small dots, the addition spectrum can qualitatively be described within a Fock-Darwin model. For a quantitative analysis, however, a hard-wall confinement has to be considered. In large dots, the energy level spectrum deviates even qualitatively from a Fock-Darwin model. The maximum wall steepness achieved is of the order of 0.4 meV/nm.Comment: 9 pages, 5 figure

Single-Electron Effects in a Coupled Dot-Ring System

Aharonov-Bohm oscillations are studied in the magnetoconductance of a micron-sized open quantum ring coupled capacitively to a Coulomb-blockaded quantum dot. As the plunger gate of the dot is modulated and tuned through a conductance resonance, the amplitude of the Aharonov-Bohm oscillations in the transconductance of the ring displays a minimum. We demonstrate that the effect is due to a single-electron screening effect, rather than to dephasing. Aharonov-Bohm oscillations in a quantum ring can thus be used for the detection of single charges.Comment: 5 pages, 3 figure

Kondo Effect in a Many-Electron Quantum Ring

The Kondo effect is investigated in a many-electron quantum ring as a function of magnetic field. For fields applied perpendicular to the plane of the ring a modulation of the Kondo effect with the Aharonov-Bohm period is observed. This effect is discussed in terms of the energy spectrum of the ring and the parametrically changing tunnel coupling. In addition, we use gate voltages to modify the ground-state spin of the ring. The observed splitting of the Kondo-related zero-bias anomaly in this configuration is tuned with an in-plane magnetic field.Comment: 4 pages, 4 figure

Singlet-Triplet Transition Tuned by Asymmetric Gate Voltages in a Quantum Ring

Wavefunction and interaction effects in the addition spectrum of a Coulomb blockaded many electron quantum ring are investigated as a function of asymmetrically applied gate voltages and magnetic field. Hartree and exchange contributions to the interaction are quantitatively evaluated at a crossing between states extended around the ring and states which are more localized in one arm of the ring. A gate tunable singlet-triplet transition of the two uppermost levels of this many electron ring is identified at zero magnetic field.Comment: 4 page

Electrostatic Modulation of the Electronic Properties of Dirac Semimetal Na3Bi

Large-area thin films of topological Dirac semimetal Na$_3$Bi are grown on amorphous SiO$_2$:Si substrates to realise a field-effect transistor with the doped Si acting as back gate. As-grown films show charge carrier mobilities exceeding 7,000 cm$^2$/Vs and carrier densities below 3 $\times$10$^{18}$ cm$^{-3}$, comparable to the best thin-film Na$_3$Bi. An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. Due to the inverted band structure, the hole mobility is significantly larger than the electron mobility in Na$_3$Bi, and when present, these holes dominate the transport properties.Comment: 5 pages, 4 figures; minor corrections and revisions for readabilit

Transmission Phase Through Two Quantum Dots Embedded in a Four-Terminal Quantum Ring

We use the Aharonov-Bohm effect in a four-terminal ring based on a Ga[Al]As heterostructure for the measurement of the relative transmission phase. In each of the two interfering paths we induce a quantum dot. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots.Comment: 3 pages, 4 figure

Transport properties of quantum dots with hard walls

Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. We find that in small dots, the addition spectrum can qualitatively be described within a Fock-Darwin model. For a quantitative analysis, however, a hard-wall confinement has to be considered. In large dots, the energy level spectrum deviates even qualitatively from a Fock-Darwin model. The maximum wall steepness achieved is of the order of 0.4 meV/nm.Comment: 9 pages, 5 figure

Princess and the Pea at the nanoscale: Wrinkling and delamination of graphene on nanoparticles

Thin membranes exhibit complex responses to external forces or geometrical constraints. A familiar example is the wrinkling, exhibited by human skin, plant leaves, and fabrics, resulting from the relative ease of bending versus stretching. Here, we study the wrinkling of graphene, the thinnest and stiffest known membrane, deposited on a silica substrate decorated with silica nanoparticles. At small nanoparticle density monolayer graphene adheres to the substrate, detached only in small regions around the nanoparticles. With increasing nanoparticle density, we observe the formation of wrinkles which connect nanoparticles. Above a critical nanoparticle density, the wrinkles form a percolating network through the sample. As the graphene membrane is made thicker, global delamination from the substrate is observed. The observations can be well understood within a continuum elastic model and have important implications for strain-engineering the electronic properties of graphene.Comment: 11 pages, 8 figures. Accepted for publication in Physical Review

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned.Comment: 4 pages, 3 figure