Tunable effective g-factor in InAs nanowire quantum dots

We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findings are discussed in view of a simple model.Comment: 4 pages, 3 figure

Universal conductance fluctuations in Dirac materials in the presence of long-range disorder

We study quantum transport in Dirac materials with a single fermionic Dirac cone (strong topological insulators and graphene in the absence of intervalley coupling) in the presence of non-Gaussian long-range disorder. We show, by directly calculating numerically the conductance fluctuations, that in the limit of very large system size and disorder strength, quantum transport becomes universal. However, a systematic deviation away from universality is obtained for realistic system parameters. By comparing our results to existing experimental data on 1/f noise, we suggest that many of the graphene samples studied to date are in a non-universal crossover regime of conductance fluctuations.Comment: 5 pages, 3 figures. Published versio

Magnetic field dependent transmission phase of a double dot system in a quantum ring

The Aharonov-Bohm effect is measured in a four-terminal open ring geometry based on a Ga[Al]As heterostructure. Two quantum dots are embedded in the structure, one in each of the two interfering paths. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots. Although the measured phase shifts are in qualitative agreement with theoretical predictions, the phase evolution exhibits unexpected dependence on the magnetic field. For example, phase lapses are found only in certain ranges of magnetic field.Comment: 5 pages, 4 figure

Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing

We measure the resistance and frequency-dependent gate capacitance of carbon nanotube (CNT) thin films in ambient, vacuum, and under low-pressure (10E-6 torr) analyte environments. We model the CNT film as an RC transmission line and show that changes in the measured capacitance as a function of gate bias and analyte pressure are consistent with changes in the transmission line impedance due to changes in the CNT film resistivity alone; the electrostatic gate capacitance of the CNT film does not depend on gate voltage or chemical analyte adsorption. However, the CNT film resistance is enormously sensitive to low pressure analyte exposure.Comment: 14 pages, 4 figure

Hooge's Constant of Carbon Nanotube Field Effect Transistors

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air

Facile fabrication of suspended as-grown carbon nanotube devices

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).Comment: 15 pages, 4 figure