Local transformation of mixed states of two qubits to Bell diagonal states

The optimal entanglement manipulation for a single copy of mixed states of two qubits is to transform it to a Bell diagonal state. In this paper we derive an explicit form of the local operation that can realize such a transformation. The result obtained is universal for arbitrary entangled two-qubit states and it discloses that the corresponding local filter is not unique for density matrices with rank $n=2$ and can be exclusively determined for that with $n=3$ and 4. As illustrations, a four-parameters family of mixed states are explored, the local filter as well as the transformation probability are given explicitly, which verify the validity of the general result.Comment: 5 pages, to be published in Phys. Rev.

A Two-Step Quantum Direct Communication Protocol Using Einstein-Podolsky-Rosen Pair Block

A protocol for quantum secure direct communication using blocks of EPR pairs is proposed. A set of ordered $N$ EPR pairs is used as a data block for sending secret message directly. The ordered $N$ EPR set is divided into two particle sequences, a checking sequence and a message-coding sequence. After transmitting the checking sequence, the two parties of communication check eavesdropping by measuring a fraction of particles randomly chosen, with random choice of two sets of measuring bases. After insuring the security of the quantum channel, the sender, Alice encodes the secret message directly on the message-coding sequence and send them to Bob. By combining the checking and message-coding sequences together, Bob is able to read out the encoded messages directly. The scheme is secure because an eavesdropper cannot get both sequences simultaneously. We also discuss issues in a noisy channel.Comment: 8 pages and 2 figures. To appear in Phys Rev

Dynamical fluctuations in classical adiabatic processes: General description and their implications

Dynamical fluctuations in classical adiabatic processes are not considered by the conventional classical adiabatic theorem. In this work a general result is derived to describe the intrinsic dynamical fluctuations in classical adiabatic processes. Interesting implications of our general result are discussed via two subtopics, namely, an intriguing adiabatic geometric phase in a dynamical model with an adiabatically moving fixed-point solution, and the possible "pollution" to Hannay's angle or to other adiabatic phase objects for adiabatic processes involving non-fixed-point solutions.Comment: 19 pages, no figures, discussion significantly expanded, published versio

Spectrum of the Vortex Bound States of the Dirac and Schrodinger Hamiltonian in the presence of Superconducting Gaps

We investigate the vortex bound states both Schrodinger and Dirac Hamiltonian with the s-wave superconducting pairing gap by solving the mean-field Bogoliubov-de-Gennes equations. The exact vortex bound states spectrum is numerically determined by the integration method, and also accompanied by the quasi-classical analysis. It is found that the bound state energies is proportional to the vortex angular momentum when the chemical potential is large enough. By applying the external magnetic field, the vortex bound state energies of the Dirac Hamiltonian are almost unchanged; whereas the energy shift of the Schrodinger Hamiltonian is proportional to the magnetic field. These qualitative differences may serve as an indirect evidence of the existence of Majorana fermions in which the zero mode exists in the case of the Dirac Hamiltonian only.Comment: 8 pages, 9 figure

Controlled order rearrangement encryption for quantum key distribution

A novel technique is devised to perform orthogonal state quantum key distribution. In this scheme, entangled parts of a quantum information carrier are sent from Alice to Bob through two quantum channels. However before the transmission, the orders of the quantum information carrier in one channel is reordered so that Eve can not steal useful information. At the receiver's end, the order of the quantum information carrier is restored. The order rearrangement operation in both parties is controlled by a prior shared control key which is used repeatedly in a quantum key distribution session.Comment: 5 pages and 2 figure

Study of Zn O,S Films grown by Aerosol Assisted Chemical Vapour Deposition and their Application as Buffer Layers in Cu In,Ga S,Se 2 Solar Cells

To reduce the use of toxic and expensive elements in chalcopyrite thin film solar cells, materials such as cadmium or indium used in buffer layers need to be substituted. Zn O,S is considered to be a potential buffer layer material when deposited with a fast and inexpensive method. Zn O,S layers have been prepared by aerosol assisted chemical vapour deposition AACVD technique. AACVD technique is a simple non vacuum process where the thin film deposition temperatures do not exceed 250 C. 10 mM spray solution was made by dissolving zinc II acetylacetonate monohydrate in ethanol. The films were grown on Mo substrate at 225 C film growth temperature . The effect of deposition parameters spray solution concentration, N2 flow rate, H2S flow rate on Zn O,S thin film properties were studied with SEM and XRD. Thereupon optimizing the deposition parameters, homogeneous and compact Zn O,S thin films were obtained and the films were employed in the chalcopyrite thin film solar cell structure by growing films on Cu In,Ga S,Se 2 substrates industrially produced by BOSCH Solar CISTech GmbH. The resulting cells were studied using current voltage and quantum efficiency analysis and compared with solar cell references that include In2S3 and CdS as buffer layer deposited by ion layer gas reaction and chemical bath deposition, respectively. The best output of the solar cell containing Zn O,S as buffer layer and without intrinsic ZnO under standard test conditions AM 1.5G, 100 mW cm2, 25 C is Voc 573 mV, Jsc 39.2 mA cm2, FF 68.4 and efficiency of 15.4 being slightly better than the In2S3 or CdS containing solar cell reference

Single photon emitters based on Ni/Si related defects in single crystalline diamond

We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. Testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose 10^12/cm^2 and 10^10/cm^2 resp.) due to creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767nm and 775nm and narrow line-widths of 2nm FWHM at room temperature. Measurements of the intensity auto-correlation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78kcounts/s whereas others show fluctuating count rates and three-level blinking.Comment: 7 pages, submitted to Applied Physics B, revised versio

Degree of entanglement for two qubits

In this paper, we present a measure to quantify the degree of entanglement for two qubits in a pure state.Comment: 5 page

Ab initio study of ferroelectric domain walls in PbTiO3

We have investigated the atomistic structure of the 180-degree and 90-degree domain boundaries in the ferroelectric perovskite compound PbTiO3 using a first-principles ultrasoft-pseudopotential approach. For each case we have computed the position, thickness and creation energy of the domain walls, and an estimate of the barrier height for their motion has been obtained. We find both kinds of domain walls to be very narrow with a similar width of the order of one to two lattice constants. The energy of the 90-dergree domain wall is calculated to be 35 mJ/m^2, about a factor of four lower than the energy of its 180-degree counterpart, and only a miniscule barrier for its motion is found. As a surprising feature we detected a small offset of 0.15-0.2 eV in the electrostatic potential across the 90-degree domain wall.Comment: 12 pages, with 9 postscript figures embedded. Uses REVTEX and epsf macros. Also available at http://www.physics.rutgers.edu/~dhv/preprints/bm_dw/index.htm

Mesoscopic models for DNA stretching under force: new results and comparison to experiments

Single molecule experiments on B-DNA stretching have revealed one or two structural transitions, when increasing the external force. They are characterized by a sudden increase of DNA contour length and a decrease of the bending rigidity. It has been proposed that the first transition, at forces of 60--80 pN, is a transition from B to S-DNA, viewed as a stretched duplex DNA, while the second one, at stronger forces, is a strand peeling resulting in single stranded DNAs (ssDNA), similar to thermal denaturation. But due to experimental conditions these two transitions can overlap, for instance for poly(dA-dT). We derive analytical formula using a coupled discrete worm like chain-Ising model. Our model takes into account bending rigidity, discreteness of the chain, linear and non-linear (for ssDNA) bond stretching. In the limit of zero force, this model simplifies into a coupled model already developed by us for studying thermal DNA melting, establishing a connexion with previous fitting parameter values for denaturation profiles. We find that: (i) ssDNA is fitted, using an analytical formula, over a nanoNewton range with only three free parameters, the contour length, the bending modulus and the monomer size; (ii) a surprisingly good fit on this force range is possible only by choosing a monomer size of 0.2 nm, almost 4 times smaller than the ssDNA nucleobase length; (iii) mesoscopic models are not able to fit B to ssDNA (or S to ss) transitions; (iv) an analytical formula for fitting B to S transitions is derived in the strong force approximation and for long DNAs, which is in excellent agreement with exact transfer matrix calculations; (v) this formula fits perfectly well poly(dG-dC) and $\lambda$-DNA force-extension curves with consistent parameter values; (vi) a coherent picture, where S to ssDNA transitions are much more sensitive to base-pair sequence than the B to S one, emerges.Comment: 14 pages, 9 figure