Control of the switching behavior of ferromagnetic nanowires using magnetostatic interactions

Magnetostatic interactions between two end-to-end Permalloy (Ni80Fe20) nanowires have been studied as a function of their separation, end shape, and width. The change in switching field increases as the wires become closer, with deviations from the switching field of an isolated wire of up to 40% observed. The sign of the change depends on the relative magnetization orientation of the two wires, with higher fields for parallel magnetization and lower fields for antiparallel magnetization. A wire end shape has a strong influence, with larger field variations being seen for flat-ended wires than wires with tapered ends. The micromagnetic modeling and experiments performed here were in good qualitative agreement. The experimental control of switching behavior of one nanowire with another was also demonstrated using magnetostatic interactions

Enhanced longitudinal magnetooptic Kerr effect contrast in nanomagnetic structures

We report on enhanced longitudinal magnetooptic Kerr effect signal contrast in thin-film nanomagnetic disks with in-plane magnetization when combined with dielectric layers that provide impedance matching to the structure and the underlying substrate. Kerr signals can increase by a factor of three, while substrate reflectance is almost completely suppressed. This leads to an increase in Kerr ellipticity relative to the background intensity and a subsequent improvement in the measured signal-to-noise ratio. Measurements using a beam focused on opaque 400-nm Ni disks yield contrast improvements of a factor of 8. Arrays of nanodisks demonstrate more complex behavior due to diffraction effects

Transverse field-induced nucleation pad switching modes during domain wall injection

We have used magnetic transmission soft X-ray microscopy (M-TXM) to image in-field magnetization configurations of patterned Ni80F20 domain wall "nucleation pads" with attached planar nanowires. Comparison with micromagnetic simulations suggests that the evolution of magnetic domains in rectangular injection pads depends on the relative orientation of closure domains in the remanent state. The magnetization reversal pathway is altered by the inclusion of transverse magnetic fields. These different modes explain previous results of domain wall injection into nanowires

Plasmonic gold nanodiscs fabricated into a photonic-crystal nanocavity

We fabricate and characterise an optical structure consisting of a photonic crystal L3 nanocavity containing two gold nanodisks placed close to a field antinode. We use finite difference time domain (FDTD) modelling to show that the optical properties of the nanocavity are sensitive to the physical separation between the gold nanodisks, and that at reduced separation, the q-factor of a cavity mode polarised parallel to the dimer long-axis is reduced, indicating coupling between the cavity mode and a localised plasmon. Preliminary experimental measurements indeed indicate a damping of the cavity mode in the presence of the dimer; a result consistent with the FDTD modelling. Such a scheme may be used to integrate plasmonic systems into all-optical photonic circuits

Direct imaging of domain-wall interactions in Ni80Fe20 planar nanowires

We have investigated magnetostatic interactions between domain walls in Ni80Fe20 planar nanowires using magnetic soft x-ray microscopy and micromagnetic simulations. In addition to significant monopole-like attraction and repulsion effects we observe that there is coupling of the magnetization configurations of the walls. This is explained in terms of an interaction energy that depends not only on the distance between the walls, but also upon their internal magnetization structure

A GaAs-based self-aligned stripe distributed feedback laser

We demonstrate operation of a GaAs-based self-aligned stripe (SAS) distributed feedback (DFB) laser. In this structure, a first order GaInP/GaAs index-coupled DFB grating is built within the p-doped AlGaAs layer between the active region and the n-doped GaInP opto-electronic confinement layer of a SAS laser structure. In this process no Al-containing layers are exposed to atmosphere prior to overgrowth. The use of AlGaAs cladding affords the luxury of full flexibility in upper cladding design, which proved necessary due to limitations imposed by the grating infill and overgrowth with the GaInP current block layer. Resultant devices exhibit single-mode lasing with high side-mode-suppression of >40 dB over the temperature range 20 °C–70 °C. The experimentally determined optical profile and grating confinement correlate well with those simulated using Fimmwave

Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications

We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.5% in the visible range of 450–700 nm and an average reflectance of less than 4% over a broad near-infrared wavelength range from 900–1400 nm. The results are obtained over a wide incidence angle of 33.3°. This study shows the potential for anti-reflective structures using a simpler reverse EBL process which can provide optical absorption or extraction efficiency enhancement in semiconductors relevant to improved performance in solar photovoltaics or light-emitting diodes

Photonic integration of uniform GaAs nanowires in hexagonal and honeycomb lattice for broadband optical absorption

We present an experimental approach toward the realization of GaAs nanowires in the form of square, hexagonal, and honeycomb lattices for photonic integration toward enhanced optical properties. We have carried out a design and fabrication process on GaAs wafers using electron beam lithography patterning, reactive ion etching for hard mask removal, and inductively coupled plasma etching of the material. The resulting photonic crystals are analyzed by field emission scanning electron microscopy. Nanowire array designs in a square, hexagonal, and honeycomb lattice with a variable height of nanowires have been studied. Using finite-difference time-domain simulation, we can derive the comparative optical absorption properties of these nanowire arrays. A very high broadband absorbance of >94% over the 400 nm–1000 nm wavelength range is studied for hexagonal and honeycomb arrays, while a square lattice array shows only a maximum of 85% absorption. We report a minimum of 2% reflectance, or 98% optical absorbance, over 450 nm–700 nm and over a wide angle of 45° through hexagonal and honeycomb lattice integration in GaAs. These results will have potential applications toward broadband optical absorption or light trapping in solar energy harvesting

Control of polarization and mode mapping of small volume high Q micropillars

We show that the polarization of the emission of a single quantum dot embedded within a microcavity pillar of elliptical cross section can be completely controlled and even switched between two orthogonal linear polarizations by changing the coupling of the dot emission with the polarized photonic modes. We also measure the spatial profle of the emission of a series of pillars with different ellipticities and show that the results can be well described by simple theoretical modeling of the modes of an infinite length elliptical cylinder

Machine learning using magnetic stochastic synapses

The impressive performance of artificial neural networks has come at the cost of high energy usage and CO2 emissions. Unconventional computing architectures, with magnetic systems as a candidate, have potential as alternative energy-efficient hardware, but, still face challenges, such as stochastic behaviour, in implementation. Here, we present a methodology for exploiting the traditionally detrimental stochastic effects in magnetic domain-wall motion in nanowires. We demonstrate functional binary stochastic synapses alongside a gradient learning rule that allows their training with applicability to a range of stochastic systems. The rule, utilising the mean and variance of the neuronal output distribution, finds a trade-off between synaptic stochasticity and energy efficiency depending on the number of measurements of each synapse. For single measurements, the rule results in binary synapses with minimal stochasticity, sacrificing potential performance for robustness. For multiple measurements, synaptic distributions are broad, approximating better-performing continuous synapses. This observation allows us to choose design principles depending on the desired performance and the device's operational speed and energy cost. We verify performance on physical hardware, showing it is comparable to a standard neural network