Modeling the electronic transport in FinFET-like lateral Ge-on-Si pin waveguide photodetectors for ultra-wide bandwidth applications

We determined the velocities of photogenerated electrons and holes in FinFET-like lateral Ge-on-Si waveguide photodetectors with Monte Carlo transport simulation. The calculated carrier velocities were used in a 3D multiphysics model focused on the investigation of the electro-optic frequency response. The good match between the bandwidths predicted by the model and the corresponding experimental values available from the literature, larger than 200 GHz, indicates the importance of moving beyond conventional drift-diffusion models for a realistic description of next-generation high-speed integrated photodetectors

"From extractivism to community resilience: the promise and perils of Sardinia's energy transition." Navigating contradictions within the Sardinian energy future: good governance, speculation, and democratisation.

MSc Thesis on the energy transition in Sardinia. The thesis highlights the current hegemonic top-down approach to the energy transition whilst suggesting bottom-up alternatives