pp-sdsd shell gap reduction in neutron-rich systems and cross-shell excitations in 20^{20}O

Excited states in $^{20}$O were populated in the reaction $^{10}$Be($^{14}$C,$\alpha$) at Florida State University. Charged particles were detected with a particle telescope consisting of 4 annularly segmented Si surface barrier detectors and $\gamma$ radiation was detected with the FSU $\gamma$ detector array. Five new states were observed below 6 MeV from the $\alpha$-$\gamma$ and $\alpha$-$\gamma$-$\gamma$ coincidence data. Shell model calculations suggest that most of the newly observed states are core-excited 1p-1h excitations across the $N = Z = 8$ shell gap. Comparisons between experimental data and calculations for the neutron-rich O and F isotopes imply a steady reduction of the $p$-$sd$ shell gap as neutrons are added

Shell structure at N=28 near the dripline: spectroscopy of 42^{42}Si, 43^{43}P and 44^{44}S

Measurements of the N=28 isotones 42Si, 43P and 44S using one- and two-proton knockout reactions from the radioactive beam nuclei 44S and 46Ar are reported. The knockout reaction cross sections for populating 42Si and 43P and a 184 keV gamma-ray observed in 43P establish that the d_{3/2} and s_{1/2} proton orbits are nearly degenerate in these nuclei and that there is a substantial Z=14 subshell closure separating these two orbits from the d_{5/2} orbit. The increase in the inclusive two-proton knockout cross section from 42Si to 44S demonstrates the importance of the availability of valence protons for determining the cross section. New calculations of the two-proton knockout reactions that include diffractive effects are presented. In addition, it is proposed that a search for the d_{5/2} proton strength in 43P via a higher statistics one-proton knockout experiment could help determine the size of the Z=14 closure.Comment: Phys. Rev. C, in pres

Ultralow Thermal Conductivity of Isotope-Doped Silicon Nanowires

The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The thermal conductivity reaches the minimum, which is about 27% of that of pure 28Si NW, when doped with fifty percent isotope atoms. The thermal conductivity of isotopic-superlattice structured SiNWs depends clearly on the period of superlattice. At a critical period of 1.09 nm, the thermal conductivity is only 25% of the value of pure Si NW. An anomalous enhancement of thermal conductivity is observed when the superlattice period is smaller than this critical length. The ultra-low thermal conductivity of superlattice structured SiNWs is explained with phonon spectrum theory.Comment: Nano Lett., ASAP Article 10.1021/nl0725998 S1530-6984(07)02599-4 Web Release Date: December 21, 200