A 200 GHz tripler using single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has a potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented

Planar varactor frequency multiplier devices with blocking barrier

The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack

Gravitation Research

Contains research objectives and summary of research.National Aeronautics and Space Administration (Grant NGR 22-009-526)Joint Services Electronics Program (Contract DAAB07-71-C-0300

Infrared Instrumentation and Astronomy

Contains research objectives and summary of research on four research projects.Joint Services Electronics Program (Contract DAAB07-75-C-1346)National Aeronautics and Space Administration (Grant NGR 22-009-526)National Aeronautics and Space Administration (Contract NAS5-22828

Infrared Instrumentation and Astronomy

Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-75-C-1346

Infrared Instrumentation and Astronomy

Contains research objectives and summary of research on five research projects.Joint Services Electronics Program (Contract DAAB07-76-C-1400)M.I.T. Sloan Fund for Basic ResearchNational Aeronautics and Space Administration (Contract NAS5-23731)National Aeronautics and Space Administration (Grant NGR 22-009-526

Infrared Instrumentation and Astronomy

Contains reports on five research projects.Joint Services Electronics Program (Contract DAAB07-76-C-1400)National Aeronautics and Space Administration (Grant NGR 22-009-526)National Aeronautics and Space Administration (Grant NSG-7328)National Aeronautics and Space Administration (Contract NAS5-24096