Nernst Effect as a Probe of Local Kondo Scattering in Heavy Fermions

A large, strongly temperature-dependent Nernst coefficient, $\nu$, is observed between $T$ = 2 K and 300 K for CeCu$_2$Si$_2$ and Ce$_{0.8}$La$_{0.2}$Cu$_2$Si$_2$. The enhanced $\nu(T)$ is determined by the asymmetry of the on-site Kondo (conduction electron$-4f$ electron) scattering rate. Taking into account the measured Hall mobility, $\mu_H$, the highly unusual thermopower, $S$, of these systems can be semiquantitatively described by $S(T)$ $=$ $-$$\nu(T)/\mu_H(T)$, which explicitly demonstrates that the thermopower originates from the local Kondo scattering process over a wide temperature range from far above to well below the coherence temperature ($\approx$ 20 K for CeCu$_2$Si$_2$). Our results suggest that the Nernst effect can act as a proper probe of local charge-carrier scattering. This promises an impact on exploring the unconventional enhancement of the thermopower in correlated materials suited for potential applications.Comment: 10 pages, 2 Figure

Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi

The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At $T$\,$\approx$\,70 K, the position of both the high-temperature shoulder of the thermopower peak and the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficient $\nu$ assumes a large maximum and the Hall mobility $\mu _H$ diminishes to below 1 cm$^2$/Vs. These cause the dimension-less ratio $\nu$/$\mu_H$ $-$ a measure of the energy dispersion of the charge scattering time $\tau(\epsilon)$ $-$ to exceed that of classical metals and semiconductors by two orders of magnitude. Concomitantly, the resistivity exhibits a hump and the magnetoresistance changes its sign. Our observations hint at a resonant scattering of the charge carriers at the magnetic crossover, imposing strong constraints on the microscopic interpretation of the robust thermopower enhancement in FeSi.Comment: 5 pages, 3 figure

Enhanced electron correlations in FeSb2_2

FeSb$_2$ has been recently identified as a new model system for studying many-body renormalizations in a $d$-electron based narrow gap semiconducting system, strongly resembling FeSi. The electron-electron correlations in FeSb$_2$ manifest themselves in a wide variety of physical properties including electrical and thermal transport, optical conductivity, magnetic susceptibility, specific heat and so on. We review some of the properties that form a set of experimental evidences revealing the crucial role of correlation effects in FeSb$_2$. The metallic state derived from slight Te doping in FeSb$_2$, which has large quasiparticle mass, will also be introduced.Comment: 9 pages, 7 figures; submitted to Annalen der Physi

Physical properties and crystal chemistry of Ce2Ga12Pt

Single crystals of the new ternary compound Ce2Ga12Pt were prepared by the self-flux technique. The crystal structure with the space group P4/nbm was established from single-crystal X-ray diffraction data and presents a derivative of the LaGa6Ni0.6 prototype. Magnetic susceptibility measurements show Curie-Weiss behaviour due to local Ce^3+ moments. At high temperatures, the magnetic anisotropy is dominated by the crystal-electric-field (CEF) effect with the easy axis along the crystallographic c direction. Ce2Ga12Pt undergoes two antiferromagnetic phase transitions at T_N,1 = 7.3K and T_N,2 = 5.5K and presents several metamagnetic transitions for the magnetic field along c. Specific-heat measurements prove the bulk nature of these magnetic transitions and reveal a doublet CEF ground state. The 4f contribution to the resistivity shows a broad maximum at T_max ~ 85K due to Kondo scattering off the CEF ground state and excited levels.Comment: 12 pages, accepted in J. Phys.: Condens. Matte

Magnetization study of the energy scales in YbRh2_{2}Si2_{2} under chemical pressure

We present a systematic study of the magnetization in YbRh$_{2}$Si$_{2}$ under slightly negative (6?% Ir substitution) and positive (7% Co substitution) chemical pressure. We show how the critical field $H_{0}$, associated with the high-field Lifshitz transitions, is shifted to lower (higher) values with Co (Ir) substitution. The critical field $H_{\mathrm{N}}$, which identifies the boundary line of the antiferromagnetic (AFM) phase $T_{\mathrm{N}}(H)$ increases with positive pressure and it approaches zero with 6% Ir substitution. On the other side, the crossover field $H^{*}$, associated with the energy scale $T^{*}(H)$ where a reconstruction of the Fermi surface has been observed, is not much influenced by the chemical substitution.}{Following the analysis proposed in Refs.\,\cite{Paschen2004,Gegenwart2007,Friedemann2009,Tokiwa2009a} we have fitted the quantity $\tilde{M}(H)=M+(dM/dH)H$ with a crossover function to indentify $H^{*}$. The $T^{*}(H)$ line follows an almost linear $H$-dependence at sufficiently high fields outside the AFM phase, but it deviates from linearity at $T \le T_{\mathrm{N}}(0)$ and in Yb(Rh$_{0.93}$Co$_{0.07}$)$_{2}$Si$_{2}$ it changes slope clearly inside the AFM phase. Moreover, the FWHM of the fit function depends linearly on temperature outside the phase, but remains constant inside, suggesting either that such an analysis is valid only for $T \ge T_{\mathrm{N}}(0)$ or that the Fermi surface changes continuously at $T = 0$ inside the AFM phase.}}Comment: 6 pages, 4 figure

Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity

Quantum criticality in Yb(Rh0.97Co0.03)2Si2 is investigated by means of resistivity and magnetoresistance. The partial substitution of Co leads to a stabilization of the magnetism as expected according to the application of chemical pressure for Yb systems. However, the signature of the Kondo-breakdown remains at the same position in the temperature-magnetic field phase diagram compared to stoichiometric YbRh2Si2. As a consequence, the Kondo-breakdown is situated within the antiferromagnetic phase. These results fit well within the global phase diagram under chemical pressure [1].Comment: 4 pages, 4 figures, submitted to ICM/SCES200

Signatures of phase transitions in the microwave response of YbRh2Si2

We used a spectroscopic microwave technique utilizing superconducting stripline resonators at frequencies between 3 GHz and 15 GHz to examine the charge dynamics of YbRh2Si2 at temperatures and magnetic fields close to the quantum critical point. The different electronic phases of this heavy-fermion compound, in particular the antiferromagnetic, Fermi-liquid, and non-Fermi-liquid regimes, were probed with temperature-dependent microwave measurements between 40 mK and 600 mK at a set of different magnetic fields up to 140 mT. Signatures of phase transitions were observed, which give information about the dynamic response of this peculiar material that exhibits field-tuned quantum criticality and pronounced deviations from Fermi-liquid theory.Comment: 5 pages, 3 figure

Emergence of an incipient ordering mode in FeSe

The structurally simplest Fe-based superconductor FeSe with a critical temperature $T_{c}\approx$ 8.5 K displays a breaking of the four-fold rotational symmetry at a temperature $T_{s}\approx 87$ K. We investigated the electronic properties of FeSe using scanning tunneling microscopy/spectroscopy (STM/S), magnetization, and electrical transport measurements. The results indicated two new energy scales (i) $T^{*} \approx$ 75 K denoted by an onset of electron-hole asymmetry in STS, enhanced spin fluctuations, and increased positive magnetoresistance; (ii) $T^{**} \approx$ 22 - 30 K, marked by opening up of a partial gap of about 8 meV in STS and a recovery of Kohler's rule. Our results reveal onset of an incipient ordering mode at $T^{*}$ and its nucleation below $T^{**}$. The ordering mode observed here, both in spin as well as charge channels, suggests a coupling between the spins with charge, orbital or pocket degrees of freedom.Comment: 5 pages, 4 figure

Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb2_2

We show that the colossal thermoelectric power, $S(T)$, observed in the correlated semiconductor FeSb$_2$ below 30\,K is accompanied by a huge Nernst coefficient $\nu(T)$ and magnetoresistance MR$(T)$. Markedly, the latter two quantities are enhanced in a strikingly similar manner. While in the same temperature range, $S(T)$ of the reference compound FeAs$_2$, which has a seven-times larger energy gap, amounts to nearly half of that of FeSb$_2$, its $\nu(T)$ and MR$(T)$ are intrinsically different to FeSb$_2$: they are smaller by two orders of magnitude and have no common features. With the charge transport of FeAs$_2$ successfully captured by the density functional theory, we emphasize a significantly dispersive electron-relaxation time $\tau(\epsilon_k)$ due to electron-electron correlations to be at the heart of the peculiar thermoelectricity and magnetoresistance of FeSb$_2$.Comment: 8 pages, 5 figure