Comparaison de procédés de dépôt de couches minces semiconductrices à partir de précurseurs organométalliques (cas des réacteurs à flux alternes en phase vapeur (ALCVD) et réacteur plasma diode hors équilibre (PACVD))

PARIS-BIUSJ-Thèses (751052125) / SudocPARIS-BIUSJ-Physique recherche (751052113) / SudocSudocFranceF

Atomic layer deposition of copper sulfide thin films

International audienc

In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition

International audienceReaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

International audienc

Plasma-enhanced atomic layer deposition of highly transparent zinc oxy-sulfide thin films

International audienc

Atomic layer deposition of zinc indium sulfide films: Mechanistic studies and evidence of surface exchange reactions and diffusion processes

International audienc

Impact of the sequence of precursor introduction on the growth and properties of atomic layer deposited Al-doped ZnO films

International audienc

Toward an all-Atomic Layer Deposition (ALD) process for Cu(In,Ga)(S,Se)2 (CIGS)-type solar cell

International audienc

Simulation and growing study of Cu–Al–S thin films deposited by atomic layer deposition

International audienc

Deposition of ultra thin CuInS2 absorber layers by ALD for thin film solar cells at low temperature (down to 150°C)

International audienc