7,587 research outputs found

    The Equilibrium Distribution of Gas Molecules Adsorbed on an Active Surface

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    We evaluate the exact equilibrium distribution of gas molecules adsorbed on an active surface with an infinite number of attachment sites. Our result is a Poisson distribution having mean X=μPPsPeX = {\mu P P_s \over P_e}, with μ\mu the mean gas density, Ps P_s the sticking probability, PeP_e the evaporation probability in a time interval τ\tau, and PP Smoluchowski's exit probability in time interval τ\tau for the surface in question. We then solve for the case of a finite number of attachment sites using the mean field approximation, recovering in this case the Langmuir isotherm.Comment: 14 pages done in late

    Logarithmic growth dynamics in software networks

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    In a recent paper, Krapivsky and Redner (Phys. Rev. E, 71 (2005) 036118) proposed a new growing network model with new nodes being attached to a randomly selected node, as well to all ancestors of the target node. The model leads to a sparse graph with an average degree growing logarithmically with the system size. Here we present compeling evidence for software networks being the result of a similar class of growing dynamics. The predicted pattern of network growth, as well as the stationary in- and out-degree distributions are consistent with the model. Our results confirm the view of large-scale software topology being generated through duplication-rewiring mechanisms. Implications of these findings are outlined.Comment: 7 pages, 3 figures, published in Europhysics Letters (2005

    Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures

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    We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have found weak deviations (about 6-20 %) of the Hall voltage from its classical value. The deviations do not correlate with the strong temperature dependence of the diagonal resistivity rho_{xx}(T). The smallest deviation in R_{xy} was found in the highest mobility sample exhibiting the largest variation in the diagonal resistivity \rho_{xx} with temperature (by a factor of 5).Comment: 4 pages, 4 figures, RevTe

    Particle size segregation in granular flow in silos

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    Segregation and layering of alumina in storage silos are investigated, with a view to predicting output quality versus time, given known variations in input quality on emplacement. A variety of experiments were conducted, existing relevant publications were reviewed, and the basis for an algorithm for predicting the effect of withdrawing from a central flowing region, in combination with variations in quality due to geometric, layering and segregation effects, is described in this report

    Probing the field-induced variation of the chemical potential in Bi(2)Sr(2)CaCu(2)O(y) via the magneto-thermopower measurements

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    Approximating the shape of the measured in Bi2Sr2CaCu2OyBi_2Sr_2CaCu_2O_y magneto-thermopower (TEP) ΔS(T,H)\Delta S(T,H) by asymmetric linear triangle of the form ΔS(T,H)Sp(H)±B±(H)(TcT)\Delta S(T,H)\simeq S_p(H)\pm B^{\pm}(H)(T_c-T) with positive B(H)B ^{-}(H) and B+(H)B ^{+}(H) defined below and above TcT_c, we observe that B+(H)2B(H)B ^{+}(H)\simeq 2B ^{-}(H). In order to account for this asymmetry, we explicitly introduce the field-dependent chemical potential of holes μ(H)\mu (H) into the Ginzburg-Landau theory and calculate both an average ΔSav(T,H)\Delta S_{av}(T,H) and fluctuation ΔSfl(T,H)\Delta S_{fl}(T,H) contributions to the total magneto-TEP ΔS(T,H)\Delta S(T,H). As a result, we find a rather simple relationship between the field-induced variation of the chemical potential in this material and the above-mentioned magneto-TEP data around TcT_c, viz. Δμ(H)Sp(H)\Delta \mu (H)\propto S_p(H).Comment: REVTEX (epsf), 4 pages, 2 PS figures; to be published in JET
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