Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Author name used in this publication: W. K. FongAuthor name used in this publication: P. K. L. ChanAuthor name used in this publication: C. Surya2009-2010 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

Author name used in this publication: W. K. Fong2001-2002 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

Author name used in this publication: W. K. FongAuthor name used in this publication: S. W. NgAuthor name used in this publication: B. H. Leung2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al₂O₃(0001)

Author name used in this publication: W. K. FongAuthor name used in this publication: C. SuryaVersion of RecordPublishe

Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate

Tin mono-sulfide (SnS) thin films have been grown by molecular beam epitaxy (MBE) on two different substrates, GaAs (100) and soda lime glass at 400°C. High resolution X-ray Diffraction (HXRD) and Scanning Electron Microscopy (SEM) are used to characterize the structural properties of the as grown SnS films. By introducing a graphene buffer layer between the SnS thin film and the substrate, the XRD rocking curve's full width at half maximum (FWHM) of the SnS film grown on GaAs (100) and soda lime glass decrease from 2.92° to 0.37° and from 6.58° to 2.04° respectively, indicating a significant improvement of SnS thin films.Department of Applied PhysicsDepartment of Electronic and Information EngineeringAuthor name used in this manuscript: W. K. FongAuthor name used in this manuscript: C. SuryaRefereed conference pape

Nitrogen doped-ZnO/n-GaN heterojunctions

Author name used in this publication: Aleksandra B. DjurišičAuthor name used in this publication: Kok Wai CheahAuthor name used in this publication: Chi Chung LingAuthor name used in this publication: Wai Kin ChanAuthor name used in this publication: Patrick W. K. FongAuthor name used in this publication: Hsian Fei Lui2011-2012 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Author name used in this publication: W. K. FongAuthor name used in this publication: C. Surya2011-2012 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

ZnO nanorod/GaN light-emitting diodes : the origin of yellow and violet emission bands under reverse and forward bias

Author name used in this publication: Xinyi ChenAuthor name used in this publication: Alan Man Ching NgAuthor name used in this publication: Aleksandra B DjurišićAuthor name used in this publication: Kok Wai CheahAuthor name used in this publication: Patrick Wai Keung Fong2011-2012 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Ultraviolet detecting apparatus

Inventor name used in this publication: Xu XingquanInventor name used in this publication: 方伟强Title in Traditional Chinese: 一種紫外綫檢測裝置ChinaVersion of Recor

Ultraviolet detector

An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN buffer layer; a GaN epitaxial layer deposited on the intermediate temperature GaN buffer layer; a Schottky junction formed on top of the GaN epitaxial layer; and a plurality of ohmic contacts also formed on top of the GaN epitaxial layer, wherein, the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer together form a double buffer layer structure so as to improve the reliability and radiation hardness of the UV detector; and wherein the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer are formed by RF-plasma enhanced MBE growth technology.Department of Electronic and Information EngineeringUS7470940; US7470940 B2; US7470940B2; US7,470,940; US 7,470,940 B2; 7470940; Application No. 11/404,568Inventor name used in this publication: Patrick Wai-Keung FongU