Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes

Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at ~983nm. The active Ga[sub][0-8]In[sub][0-2]As single quantum well is 100 [angstroms] thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ion-beam etching. The microlasers are 3-50-μm across. The minimum threshold currents are 1.1 mA (pulsed) and 1.5 mA (CW)

Low-Threshold Electrically Pumps Vertical-Cavity Surface-Emitting Microlasers

Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several μm exhibit room-temperature pulsed current thresholds as low as 1.3mA with 958 nm output wavelength

Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 µm to >50 µm. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching packaging and arrays, and ultrasmall devices