12 research outputs found
On the effects of total ionizing dose in silicon-germanium BiCMOS platforms
Get PDFThe objective of the proposed research is to analyze the effects of total ionizing dose (TID) on highly scaled CMOS and Silicon-Germanium Heterojunction Bipolar Transistors (SiGE HBTs). TID damage is caused by a build-up of charge at sensitive Si-SiO₂ interfaces and may cause device or circuit failure. TID damage is due to an accumulation of radiation particle strikes seen in extreme environments, such as space.M.S
An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology
No full textBest Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation
No full textp-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
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The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology
No full textAn Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers
No full textOptimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs
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