9,315 research outputs found
Origin of the efficient light emission from inversion domain boundaries in GaN
Intentionally-produced inversion domain boundaries in GaN have been reported
to be highly efficient recombination centers. Here I report a rationale for
this phenomenon based on ab initio density-functional calculations. I also
propose a model, based on the existence of polarization in GaN, of the
observation that a domain boundary acts as a rectifying junction under voltage
applied between the two opposite-polarity surfaces.Comment: RevTeX 4 pages, 4 eps figure
The Increasing Inequality in Income distribution: A Note
In the last 20 years the within countries income inequality has continuously increased. This is a global phenomenon which is observable both advanced and developing countries. Excessive income and wealth inequalities played a role in the genesis of the recent financial crisis and may impair the recovery of the world economy. The long term trend of rising inequalities is the result of different forces. On the one side technological change modified the demand for labour in favour of skilled workers widening the skill premium in wages. From the other side, globalization in trade and finance have contributed to the problem. In particular, fast financial liberalization seems to be a major source of increased inequalities. The huge expansion of financial flows in an international environment lacking adequate international regulatory and supervisory mechanisms means the problems of global economic instability and growing inequality cannot be solved at the national level. New supranational rules and cooperative solutions are called for.Inequality, globalization, technical change
Vibrational stability of graphene under combined shear and axial strains
We study the vibrational properties of graphene under combined shear and
uniaxial tensile strain using density-functional perturbation theory. Shear
strain always causes rippling instabilities with strain-dependent direction and
wavelength; armchair strain contrasts this instability, enabling graphene
stability in a large range of combined strains. A complementary description
based on membrane elasticity theory nicely clarifies the competition of
shear-induced instability and uniaxial tension. We also report the large
strain-induced shifts of the split components of the G optical phonon line,
which may serve as a shear diagnostic. As to the electronic properties, we find
that conical intersections move away from the Brillouin zone border under
strain, and they tend to coalesce at large strains, making the opening of gaps
difficult to assess. By a detailed search, we find that even at large strains,
only small gaps in the tens-of-meV range open at the former Dirac points.Comment: 6 pages, 11 figure
Multiferroicity in V-doped PbTiO
We report \emph{ab initio} predictions on the proper multiferroic
(ferromagnetic, insulating and ferroelectric) character of PbTiO doped
with vanadium. V impurities coupled ferromagnetically carry a magnetization of
1 each. The coupling is expected to be strong, since the
paramagnetic solution is higher by 150 meV/vanadium, and no stable
antiferromagnetic solution was found. The electronic gap in the doped system is
about 0.2-0.3 eV in GGA, hence the system is properly multiferroic. V doping
increases the spontaneous polarization in PbTiO, with an approximate
percentual rate of 0.7 C/cm.Comment: 4 pages, 3 figures, 1 tabl
First-principles calculation of the piezoelectric tensor d of III-V nitrides
We report direct first-principles density-functional calculations of the
piezoelectric tensor \tensor{d} relating polarization to applied stress for
the binary compounds AlN, GaN, and InN. The values of \tensor{d} are rather
sensitive to the choice of the exchange-correlation functional, and results are
presented for both the local-density and gradient approximations. A comparison
with experiment and with values predicted indirectly from the elastic and
e-piezoconstant tensors is also presented.Comment: RevTeX 3 pages, no figure
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