Evidence for the Galactic X-ray Bulge II

A mosaic of 5 \ros~PSPC pointed observations in the Galactic plane ($l\sim25^{\circ}$) reveals X-ray shadows in the $0.5-2.0$ keV band cast by distant molecular clouds. The observed on-cloud and off-cloud X-ray fluxes indicate that $\sim15$% and $\sim37$% of the diffuse X-ray background in this direction in the \tq~keV and 1.5 keV bands, respectively, originates behind the molecular gas which is located at $\sim$3 kpc from the Sun. The implication of the derived background X-ray flux beyond the absorbing molecular cloud is consistent with, and lends further support to recent observations of a Galactic X-ray bulge.Comment: 19 pages, 5 figures, 2 table

A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities

We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are probed to obtain reliable statistics. As the quality factor increases we observe a clear decrease in the average mode emission intensity recorded under comparable optical pumping conditions. This clear experimentally observed trend is compared with simulations based on a dissipative master equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain evidence that reabsorption of photons emitted into the cavity mode is responsible for the observed trend. In combination with the observation of cavity linewidth broadening in power dependent measurements, we conclude that free carrier absorption is the limiting effect for the cavity mediated light enhancement under conditions of strong pumping.Comment: 8 pages, 5 figure

The Robinson-Trautman Type III Prolongation Structure Contains K2_2

The minimal prolongation structure for the Robinson-Trautman equations of Petrov type III is shown to always include the infinite-dimensional, contragredient algebra, K$_2$, which is of infinite growth. Knowledge of faithful representations of this algebra would allow the determination of B\"acklund transformations to evolve new solutions.Comment: 20 pages, plain TeX, no figures, submitted to Commun. Math. Phy

Shape control of QDs studied by cross-sectional scanning tunneling microscopy

In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thickness of the first capping layer. Concerning the technique of antimony capping we show that the surfactant properties of Sb result in the preservation of the shape of strained InAs/InP QDs during overgrowth. This could be achieved by both a growth interrupt under Sb flux and capping with a thin GaAsSb layer prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick, and that minor intermixing of Al with the QDs takes place.Comment: 7 pages, 10 figure

Shape control of QDs studied by cross-sectional scanning tunneling microscopy

In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth of strained InGaAs/GaAs QD layers results in flattened QDs and a reduced WL. The height of the QDs and WLs could be controlled by varying the thickness of the first capping layer. Concerning the technique of antimony capping we show that the surfactant properties of Sb result in the preservation of the shape of strained InAs/InP QDs during overgrowth. This could be achieved by both a growth interrupt under Sb flux and capping with a thin GaAsSb layer prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick, and that minor intermixing of Al with the QDs takes place.Comment: 7 pages, 10 figure

Solutions of the sDiff(2)Toda equation with SU(2) Symmetry

We present the general solution to the Plebanski equation for an H-space that admits Killing vectors for an entire SU(2) of symmetries, which is therefore also the general solution of the sDiff(2)Toda equation that allows these symmetries. Desiring these solutions as a bridge toward the future for yet more general solutions of the sDiff(2)Toda equation, we generalize the earlier work of Olivier, on the Atiyah-Hitchin metric, and re-formulate work of Babich and Korotkin, and Tod, on the Bianchi IX approach to a metric with an SU(2) of symmetries. We also give careful delineations of the conformal transformations required to ensure that a metric of Bianchi IX type has zero Ricci tensor, so that it is a self-dual, vacuum solution of the complex-valued version of Einstein's equations, as appropriate for the original Plebanski equation.Comment: 27 page