Next-generation long-wavelength infrared detector arrays: competing technologies and modeling challenges

In this paper, Sb-based superlattice fabrication processing is based on standard III-V technology, implying lower costs of mass production and constituting a relatively new alternative for an IR material system in LWIR and VLWIR bands

Diffusive-Probabilistic Model for Inter-Pixel Crosstalk in HgCdTe Focal Plane Arrays

A closed-form probabilistic model for inter-pixel crosstalk in planar HgCdTe focal plane arrays is presented, providing simple expressions of crosstalk as function of device parameters like the pixel pitch, the absorber thickness, and the extension of the carrier depleted region. The method is effective in particular for performing parameter sensitivity studies on inter-pixel crosstalk, as an alternative to large-scale numerical simulations. The model is validated against three-dimensional combined optical and electrical numerical simulations, considering realistic, non-monochromatic illumination

Modeling the effects of graded and abrupt mole fraction profiles in pBn and nBn HgCdTe barrier detectors

We present a numerical simulation study at 200 K of pBn and nBn HgCdTe barrier detectors, focused on the effects of the composition profile on the J-V characteristics in dark. Considering a conventional barrier detector structure with three regions (absorber, barrier, cap), we discuss how the J-V characteristics are affected by the steepness of the cap/barrier and barrier/absorber interfaces, especially in the nBn configuration

Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation

The dark current is a fundamental figure of merit to characterize the performance of high-sensitivity, low-noise mid- and far-infrared barrier photodetectors. In the context of HgCdTe barrier photodetectors, the trend is to use very low doping concentrations, in an attempt to minimize recombination processes. In the present work, through TCAD simulations, we delve deeper into the design of low-dark-current $p{\mathrm{B}}n$ detectors, showing the possible existence of an optimum doping. This occurrence is investigated and interpreted also by means of closed-form expressions for the lifetimes, emphasizing the role of the interplay between Auger and Shockley-Read-Hall generation processes