Studies of heteroface solar cell performance

The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are described. Crystal growth, the diffusion of Zn into the GaAs layer to form the p-n junction, SEM studies of the diffusion length of GaAs, and procedures for making ohmic contacts are discussed

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Semiannual progress report, period ending 30 Sep. 1968

Gain, frequency and temperature dependence in heterojunction transistors of GaAs, ZnSe, and G

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970

Fabrication problems and device characteristics of ZnSe-GaAs and Ge-GaAs heterojunction

Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium

Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunction

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge

Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/Ga