Synchronization of spin-transfer oscillators driven by stimulated microwave currents

We have simulated the non-linear dynamics of networks of spin-transfer oscillators. The oscillators are magnetically uncoupled but electrically connected in series. We use a modified Landau-Lifschitz- Gilbert equation to describe the motion of each oscillator in the presence of the oscillations of all the others. We show that the oscillators of the network can be synchronized not only in frequency but also in phase. The coupling is due to the microwave components of the current induced in each oscillator by the oscillations in all the other oscillators. Our results show how the emitted microwave power of spin-transfer oscillators can be considerably enhanced by current-induced synchronization in an electrically connected network. We also discuss the possible application of our synchronization mechanism to the interpretation of the surprisingly narrow microwave spectrum in some isolated spin-transfer oscillators

Anomalous Hall Effect in Ferromagnetic Metals: Role of Phonons at Finite Temperature

The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a function of temperature $T$, inelastic scattering rate $\gamma$, chemical potential $\mu$, and impurity concentration $x_{\rm imp}$. We find that the new scaling law holds over a wide range of these parameters; $-\sigma_{xy}= (\alpha \sigma_{xx0}^{-1} + \beta \sigma_{xx0}^{-2}) \sigma_{xx}^2 + b$, with $\sigma_{\mu \nu}$ ($\sigma_{\mu \nu 0}$) being the conductivity tensor (with only elastic scattering), which corresponds to the recent experimental observation [Phys. Rev. Lett. {\bf 103} (2009) 087206]. The condition of this scaling is examined. Also, it is found that the intrinsic mechanism depends on temperature under a resonance condition.Comment: 5 figure

Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.Comment: To appear in Physical Review Letter

Ordering in a spin glass under applied magnetic field

Torque, torque relaxation, and magnetization measurements on a AuFe spin glass sample are reported. The experiments carried out up to 7 T show a transverse irreversibility line in the (H,T) plane up to high applied fields, and a distinct strong longitudinal irreversibility line at lower fields. The data demonstrate for that this type of sample, a Heisenberg spin glass with moderately strong anisotropy, the spin glass ordered state survives under high applied fields in contrast to predictions of certain "droplet" type scaling models. The overall phase diagram closely ressembles those of mean field or chiral models, which both have replica symmetry breaking transitions.Comment: 4 pages, 3 figures, accepted for PR

Coupling efficiency for phase locking of a spin transfer oscillator to a microwave current

The phase locking behavior of spin transfer nano-oscillators (STNOs) to an external microwave signal is experimentally studied as a function of the STNO intrinsic parameters. We extract the coupling strength from our data using the derived phase dynamics of a forced STNO. The predicted trends on the coupling strength for phase locking as a function of intrinsic features of the oscillators i.e. power, linewidth, agility in current, are central to optimize the emitted power in arrays of mutually coupled STNOs

Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the existence of a magnetic state at the Si/oxide interface. The average spin diffusion length obtained is of 650 nm approximately. Results are compared to the window of resistances that seems to exist between the tunnel barrier resistance and two threshold resistances but the spin transfer seems to work in the range and outside the two thresholds

Electric-field dependent spin diffusion and spin injection into semiconductors

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.Comment: 5 pages, 3 eps figure

Boundary resistance in magnetic multilayers

Quasiclassical boundary conditions for electrochemical potentials at the interface between diffusive ferromagnetic and non-magnetic metals are derived for the first time. An expression for the boundary resistance accurately accounts for the momentum conservation law as well as essential gradients of the chemical potentials. Conditions are established at which spin-asymmetry of the boundary resistance has positive or negative sign. Dependence of the spin asymmetry and the absolute value of the boundary resistance on the exchange splitting of the conduction band opens up new possibility to estimate spin polarization of the conduction band of ferromagnetic metals. Consistency of the theory is checked on existing experimental data.Comment: 8 pages, 3 figures, designed using IOPART styl

Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization

We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics