Zigzag domain wall mediated reversal in antiferromagnetically coupled layers

The Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling between two magnetic layers leads to many important technological applications. Here, the interaction between changing antiferromagnetic RKKY coupling and domain structure is studied in a sample consisting of two 5 nm thick CoFeB layers separated by a wedge of Cu up to 4 nm thick. Magnetic reversal occurs via the propagation of a zigzag domain wall front along the wedge. The modification of domain patterns created in the reversal of a coupled layers in the presence of antiferromagnetic RKKY coupling and coupling gradients is demonstrated. Firstly, the coupling leads to a smaller amplitude of the zigzag wall, which is aligned perpendicular to the easy axis, followed by elongation of the walls at higher coupling strength. The antiferromagnetic RKKY coupling, while not strong enough to cause antiparallel alignment of the layers, is argued to lead to coupling between the spins in the domain walls in the two layers, lowering their energy and driving the reversal behavior of the film

Three dimensional magnetic nanowires grown by focused electron-beam induced deposition

Control of the motion of domain walls in magnetic nanowires is at the heart of various recently proposed three-dimensional (3D) memory devices. However, fabricating 3D nanostructures is extremely complicated using standard lithography techniques. Here we show that highly pure 3D magnetic nanowires with aspect-ratios of ~100 can be grown using focused electron-beam-induced-deposition. By combining micromanipulation, Kerr magnetometry and magnetic force microscopy, we determine that the magnetisation reversal of the wires occurs via the nucleation and propagation of domain walls. In addition, we demonstrate that the magnetic switching of individual 3D nanostructures can be directly probed by magneto-optical Kerr effect

Non-Planar Geometrical Effects on the Magnetoelectrical Signal in a Three-Dimensional Nanomagnetic Circuit

Expanding nanomagnetism and spintronics into three dimensions (3D) offers great opportunities for both fundamental and technological studies. However, probing the influence of complex 3D geometries on magnetoelectrical phenomena poses important experimental and theoretical challenges. In this work, we investigate the magnetoelectrical signals of a ferromagnetic 3D nanodevice integrated into a microelectronic circuit using direct-write nanofabrication. Due to the 3D vectorial nature of both electrical current and magnetization, a complex superposition of several magnetoelectrical effects takes place. By performing electrical measurements under the application of 3D magnetic fields, in combination with macrospin simulations and finite element modelling, we disentangle the superimposed effects, finding how a 3D geometry leads to unusual angular dependences of well-known magnetotransport effects such as the anomalous Hall effect. Crucially, our analysis also reveals a strong role of the non-collinear demagnetizing fields intrinsic to 3D nanostructures, which results in an angular dependent magnon magnetoresistance contributing strongly to the total magnetoelectrical signal. These findings are key to the understanding of 3D spintronic systems and underpin further fundamental and device-based studies.Leverhulme Trust Isaac Newton Trust L’Oréal-UNESCO U.K. and Ireland Fellowship For Women In Science EPSRC Winton Program for Physics of Sustainability China Scholarship Council European Union’s Horizon 2020 research and innovation program Spanish AE

Studies of Nanoconstrictions, Nanowires and Fe₃O₄ Thin Films: Electrical Conduction and Magnetic Properties. Fabrication by Focused Electron/Ion Beam

This work constitutes a detailed study of electrical and magnetic properties in nanometric materials with a range of scales: atomic-sized nanoconstrictions, micro- and nanowires and thin films. Firstly, a novel method of fabricating atomic-sized constrictions in metals is presented; it relies on measuring the conduction of the device while a focused-ion-beam etching process is in progress. Secondly, it describes wires created by a very promising nanolithography technique: Focused electron/ion-beam-induced deposition. Three different gas precursors were used: (CH₃)₃Pt(CpCH₃), W(CO)₆ and Co₂(CO)₈. The thesis reports the results obtained for various physical phenomena: the metal-insulator transition, superconducting and magnetic properties, respectively. Finally, the detailed magnetotransport properties in epitaxial Fe₃O₄ thin films grown on MgO (001) are presented. Overall, the new approaches developed in this thesis have great potential for supporting novel technologies

Present and future applications of magnetic nanostructures grown by FEBID

Currently, magnetic nanostructures are routinely grown by focused electron beam induced deposition (FEBID). In the present article, we review the milestones produced in the topic in the past as well as the future applications of this technology. Regarding past milestones, we highlight the achievement of high-purity cobalt and iron deposits, the high lateral resolution obtained, the growth of 3D magnetic deposits, the exploration of magnetic alloys and the application of magnetic deposits for Hall sensing and in domain-wall conduit and magnetologic devices. With respect to future perspectives of the topic, we emphasize the potential role of magnetic nanostructures grown by FEBID for applications related to highly integrated 2D arrays, 3D nanowires devices, fabrication of advanced scanning-probe systems, basic studies of magnetic structures and their dynamics, small sensors (including biosensors) and new applications brought by magnetic alloys and even exchange biased systems

Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam- induced deposition

We present a study of the transport properties of Pt-C nanowires created by focused-ion-beam (FIB)-induced deposition. By means of the measurement of the resistance while the deposit is being performed, we observe a progressive decrease in the nanowire resistivity with thickness, changing from 108 μΩ cm for thickness ∼20 nm to a lowest saturated value of 700 μΩ cm for thickness > 150 nm. Spectroscopy analysis indicates that this dependence on thickness is caused by a gradient in the metal-carbon ratio as the deposit is grown. We have fabricated nanowires in different ranges of resistivity and studied their conduction mechanism as a function of temperature. A metal-insulator transition as a function of the nanowire thickness is observed. The results will be discussed in terms of the Mott-Anderson theory for noncrystalline materials. An exponential decrease in the conductance with the electric field is found for the most resistive samples, a phenomenon understood by the theory of hopping in lightly doped semiconductors under strong electric fields. This work explains the important discrepancies found in the literature for Pt-C nanostructures grown by FIB and opens the possibility to tune the transport properties of this material by an appropriate selection of the growth parameters

Multi-bit operations in vertical spintronic shift registers

Spintronic devices have in general demonstrated the feasibility of non-volatile memory storage and simple Boolean logic operations. Modern microprocessors have one further frequently used digital operation: bit-wise operations on multiple bits simultaneously. Such operations are important for binary multiplication and division and in efficient microprocessor architectures such as reduced instruction set computing (RISC). In this paper we show a four-stage vertical serial shift register made from RKKY coupled ultrathin (0.9 nm) perpendicularly magnetised layers into which a 3-bit data word is injected. The entire four stage shift register occupies a total length (thickness) of only 16 nm. We show how under the action of an externally applied magnetic field bits can be shifted together as a word and then manipulated individually, including being brought together to perform logic operations. This is one of the highest level demonstrations of logic operation ever performed on data in the magnetic state and brings closer the possibility of ultrahigh density all-magnetic microprocessors

Tunneling and anisotropic-tunneling magnetoresistance in iron nanoconstrictions fabricated by focused-ion-beam

We report the magnetoresistance (MR) measurements in a nanoconstriction fabricated by focused-ion-beam (FIB) in the tunneling regime of conductance. The resistance of the contact was controlled during the fabrication process, being stable in the metallic regime, near the conductance quantum, and under high vacuum conditions. The metallic contact was deteriorated when exposed to atmosphere, resulting in a conduction mechanism by tunneling. The TMR was found to be of 3% at 24 K. The anisotropic tunneling magnetoresistance (TAMR) was around 2% for low temperatures, with a field angle dependence more abrupt than in bulk Fe. This preliminary result is promising for the application of this technique to fabricate stable ferromagnetic constrictions near the atomic regime of conductance, where high MR values are expected

Soliton propagation in micron-sized magnetic ratchet elements

We demonstrate ratchet soliton propagation in individual patterned antiferromagnetically coupled superlattice elements down to 3 μm diameter using magneto-optical Kerr effect measurements. The bulk switching and soliton propagation fields are investigated as a function of the element size. It is found that on the length scale investigated here we do not see significant variation in ratchet behavior depending on the element size. The margin for soliton propagation and additional features related to downscaling are discussed

Probing 3D magnetic nanostructures by dark-field magneto-optical Kerr effect

Magneto-optical techniques are key tools for the characterization of magnetic effects at a nanoscale. Here, we present the dark-field magneto-optical Kerr effect (DFMOKE), a technique we have recently developed for the characterization of three-dimensional magnetic nanostructures. We introduce the principles of DFMOKE, based on the separation of an incident beam into multiple reflected beams when focusing on a 3D nano-geometry. We show the key modifications needed in a standard focused MOKE magnetometer to perform these measurements. Finally, we showcase the power of this method by detecting the magnetic switching of a single tilted 3D nanowire, independently from the switching of a magnetic thin film that surrounds it. We obtain independent and simultaneous switching detection of the nanowire and the film for all nanowire dimensions investigated, allowing us to estimate a magnetic sensitivity of 7 × 10−15 A m2 for DFMOKE in the setup used. We conclude the article by providing perspectives of future avenues where DFMOKE can be a very powerful characterization tool in the future investigations of 3D magnetic nanostructures