1 research outputs found
Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication
Direct chemical vapor deposition
of graphene on semiconductors
and insulators provides high feasibility for integration of graphene
devices and semiconductor electronics. However, the current methods
typically rely on high temperatures (>1000 °C), which can
damage
the substrates. Here, a growth method for high-quality large-area
graphene at 300 °C is introduced. A multizone furnace with gradient
temperature control was designed according to a computational fluid
dynamics model. The crucial roles of the chamber pressure in the film
continuity and hydrogen composition in the graphene defect density
at low temperature were revealed. As a result, a uniform graphene
film with the Raman ratio ID/IG = 0.08 was obtained. Furthermore, a technique of laminating
single-crystal Cu foil as a sacrificial layer on the substrate was
proposed to realize transfer-free growth, and a wafer-scale graphene
transistor array was demonstrated with good performance consistency,
which paves the way for mass fabrication of graphene devices