Encapsulating Mo-Doped TiO2 Anatase in N-Doped Amorphous Carbon With Excellent Lithium Storage Performances

To improve the capability, cycling stability and rate capacity of anatase TiO2-based electrode, Mo-doped TiO2 anatase encapsulated in nitrogen-doped amorphous carbon (denoted for Mo-TiO2@NC) were synthesized using a facile hydrothermal method followed by a coating with polyaniline (PANI) and heating treatment. When tested as an anode for lithium ion batteries, the Mo-TiO2@NC electrode showed an initial discharge and charge capacity of 850.7 and 548.3 mAh g−1 at a current density of 85 mA g−1, respectively, with a remarkable discharge capacity maintained at 449.2 mAh g−1 after 100 cycles. Even at a high current density of 850 mA g−1, a reversible capacity of 154 mAh g−1 after 200 cycles was obtained, displaying good rate capacity and long-term cycling stability. The outstanding electrochemical performance of Mo-TiO2@NC can be attributed to the synergistic effect of aliovalent ions doping and carbon coating

Genetic testing of PAX8 mutations associated with thyroid dysgenesis in Chinese congenital hypothyroidism patients

Introduction: Thyroid dysgenesis (TD) is the main cause of congenital hypothyroidism (CH), affecting nearly 1 in 2000–3000 newborns worldwide, as the most common neonatal endocrine disorder. Paired box gene 8 (PAX8), expressed during all stages of thyroid follicular cell, plays a key role in thyroid morphogenesis by a complex regulatory network. In conclusion, the genetic mechanism of PAX8 mutant in TD is still ambiguous; therefore, further research is needed. Material and methods: Blood samples were collected from 289 TD patients in Shandong Province, China. Genomic DNA was extracted from peripheral blood. All the exons of PAX8 along with their exon-intro boundaries were amplified by PCR and analysed by Sanger sequencing. Results: We identified three novel PAX8 nonsense mutations in three patients by sequence analysis of PAX8: Patient 1 (c.285C>G, p.Tyr95Ter), Patient 2 (c.747T>G, p.Tyr249Ter), and Patient 3 (c.786C>A, p.Tyr262Ter). All the three patients carrying PAX8 variants had obvious clinical phenotypes of thyroid anomaly, such as hypoplasia and athyreosis. Conclusion: We conducted the largest worldwide PAX8 mutation screening so far in TD patients. Three presumably pathogenic PAX8 mutations were detected in 289 TD cases for the first time, showing the mutation rate of PAX8 is 1.04% in Chinese TD patients. In addition, our study expands the gene mutation spectrum of TD

Atomic-scale visualization of quasiparticle interference on a type-II Weyl semimetal surface

We combine quasiparticle interference simulation (theory) and atomic resolution scanning tunneling spectro-microscopy (experiment) to visualize the interference patterns on a type-II Weyl semimetal Mo$_{x}$W$_{1-x}$Te$_2$ for the first time. Our simulation based on first-principles band topology theoretically reveals the surface electron scattering behavior. We identify the topological Fermi arc states and reveal the scattering properties of the surface states in Mo$_{0.66}$W$_{0.34}$Te$_2$. In addition, our result reveals an experimental signature of the topology via the interconnectivity of bulk and surface states, which is essential for understanding the unusual nature of this material.Comment: To appear in Phys. Rev. Let

Massimo Pallotrino, Etruščani, Zagreb: Svitava, 2008., 541 str.

This work was financially supported by National Natural Science Foundation (NSF) of China and the Government of Guangdong Province for NSF (U1301242, 21271190 and S2012020011113), the Specialized Research Fund for the Doctoral Program of Higher Education (20130171130001) and industry (2012B09000026), and the State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Jilin University (2012-01). Qili Wu and Xianfeng Yang contributed equally to this work.A new type of anatase TiO2 microcages assembled by oriented nanocrystals have been successfully fabricated through a topotactical conversion from CaTiO3 microcage precursor. The anatase microcages have all their six side faces dominated by anatase {001} facets, as revealed by detailed electron microscopy characterization. When used as the anode material for Li-ion storage, the unique microcages have the advantage of remarkable structural stability, high surface areas, and facile electronic conduction path. As a result, the TiO2 microcages-based anode achieves a high lithium storage performance especially at high current rates and long cycling stability, giving 175 mAh g-1 at 5C (850 mA g-1) after 800 cycles and 95 mAh g-1 at 50 C after 5000 cycles. Our comparison to the literature shows that this is a competitive and promising material for Li-ion battery and potentially also photocatalyst applications.PostprintPeer reviewe

Disitamab Vedotin (RC48) for HER2-positive advanced breast cancer: a case report and literature review

Background/aimHuman epidermal growth factor receptor 2 (HER2)-positive breast cancer is associated with a higher risk of metastasis and poorer overall survival (OS) due to HER2 gene overexpression/amplification. Although anti-HER2 targeted therapy has shown survival benefits in HER2-positive advanced breast cancer (ABC) patients, long-term treatment often leads to drug resistance, complicating further treatment options. RC48, an antibody-drug conjugate (ADC), combines the benefits of antibody targeting with the cytotoxic effects of a small molecule drug.Case reportWe present a case involving a female patient with HER2-positive ABC who developed drug resistance and disease progression following multi-line anti-HER2 targeted therapy. In this instance, RC48 exhibited anti-tumor activity in an ABC patient resistant to HER2-targeted therapy. After eight treatment cycles with 120 mg of RC48, the tumor size decreased and stabilized.ConclusionThis case report underscores the potential clinical value of RC48 as a promising treatment alternative for patients resistant to HER2 targeted therapies

Anisotropic ultrafast spin/valley dynamics in WTe2 films

WTe2 Weyl semimetal hosts the natural broken inversion symmetry and strong spin orbit coupling, making it promising for exotic spin/valley dynamics within a picosecond timescale. Here, we unveil an anisotropic ultrafast spin/valley dynamics in centimeter-scale, single-crystalline Td-WTe2 films using a femtosecond pump-probe technique at room temperature. We observe a transient (~0.8 ps) intra-valley transition and a subsequent polarization duration (~5 ps) during the whole spin/valley relaxation process. Furthermore, the relaxation exhibits the remarkable anisotropy of approximately six-fold and two-fold symmetries due to the intrinsic anisotropy along the crystalline orientation and the extrinsic matrix element effect, respectively. Our results offer a prospect for the ultrafast manipulation of spin/valleytronics in topological quantum materials for dissipationless high-speed spin/valleytronic devices.Comment: 21 pages, 4 figure

Inversion boundary annihilation in GaAs Monolithically grown on on-axis Silicon (001)

Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001) substrates enables a route of low‐cost and high‐density Si‐based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from the interface between III–V materials and Si, which makes it almost impossible to produce high‐quality III–V devices on Si. In this paper, a novel technique to achieve IB‐free GaAs monolithically grown on on‐axis Si (001) substrates by realizing the alternating straight and meandering single atomic steps on Si surface has been demonstrated without the use of double Si atomic steps, which was previously believed to be the key for IB‐free III–V growth on Si. The periodic straight and meandering single atomic steps on Si surface are results of high‐temperature annealing of Si buffer layer. Furthermore, an electronically pumped quantum‐dot laser has been demonstrated on this IB‐free GaAs/Si platform with a maximum operating temperature of 120 °C. These results can be a major step towards monolithic integration of III–V materials and devices with the mature CMOS technology