Spin-current diode with a ferromagnetic semiconductor

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics.Comment: 5 pages, 3 figure

The spin-polarized ν=0\nu=0 state of graphene: a spin superconductor

We study the spin-polarized $\nu=0$ Landau-level state of graphene. Due to the electron-hole attractive interaction, electrons and holes can bound into pairs. These pairs can then condense into a spin-triplet superfluid ground state: a spin superconductor state. In this state, a gap opens up in the edge bands as well as in the bulk bands, thus it is a charge insulator, but it can carry the spin current without dissipation. These results can well explain the insulating behavior of the spin-polarized $\nu=0$ state in the recent experiments.Comment: 6 pages, 4 figure

Multi-layer configuration for the cathode electrode of polymer electrolyte fuel cell

This paper conducts a one-dimensional theoretical study on the electrochemical phenomenon in the dual-layer cathode electrode of polymer electrolyte fuel cells (PEFCs) with varying sub-layer thicknesses, and further extends the analysis to a triple-layer configuration. We obtain the explicit solution for a general dual-layer configuration with different layer thicknesses. Distributions of the key quantities such as the local reaction current and electrolyte overpotential are exhibited at different ratios of the ionic conductivities, electrochemical kinetics, and layer thicknesses. Based on the dual-layer approach, we further derive the explicit solutions for a triple-layer electrode. Sub-layer performances are plotted and compared. The results indicate that the layer adjacent to the electrolyte membrane may contribute a major part of the electrode faradic current production. The theoretical analysis presented in this paper can be applied to assist electrode development through complicated multi-layer configuration for cost-effective high performance electrodes. © 2010 Elsevier Ltd

Approximating Cross-validatory Predictive P-values with Integrated IS for Disease Mapping Models

An important statistical task in disease mapping problems is to identify out- lier/divergent regions with unusually high or low residual risk of disease. Leave-one-out cross-validatory (LOOCV) model assessment is a gold standard for computing predictive p-value that can flag such outliers. However, actual LOOCV is time-consuming because one needs to re-simulate a Markov chain for each posterior distribution in which an observation is held out as a test case. This paper introduces a new method, called iIS, for approximating LOOCV with only Markov chain samples simulated from a posterior based on a full data set. iIS is based on importance sampling (IS). iIS integrates the p-value and the likelihood of the test observation with respect to the distribution of the latent variable without reference to the actual observation. The predictive p-values computed with iIS can be proved to be equivalent to the LOOCV predictive p-values, following the general theory for IS. We com- pare iIS and other three existing methods in the literature with a lip cancer dataset collected in Scotland. Our empirical results show that iIS provides predictive p-values that are al- most identical to the actual LOOCV predictive p-values and outperforms the existing three methods, including the recently proposed ghosting method by Marshall and Spiegelhalter (2007).Comment: 21 page

Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions

The temperature dependence of conductivity $\sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and their number was varied using substrate bias. The data suggest that in the limit of $T\to 0$ the metallic behavior, as characterized by $d\sigma/dT < 0$, is suppressed by an arbitrarily small amount of scattering by local magnetic moments.Comment: 4 pages, revtex, plus four encapsulated postscript figure