213 research outputs found
Knowledge structures and their representation in the language
The authors define and describe the components which build the structure of the frame "touch
Equivalent Circuits for FeCoZr-Al2O3 Nanocomposite Films Deposited in Argon and Argon-Oxygen Atmospheres
The investigation of the equivalent circuits for granular nanocomposite films was performed according to the method of the impedance spectroscopy. The films, consisted of the Fe0.45Co0.45Zr0.10 ferromagnetic alloy nanoparticles embedded into amorphous dielectric alumina matrix, were deposited in pure argon or argon and oxygen mixture. The temperature dependences of active and reactive components in the equivalent
circuits for the (Fe0.45Co0.45Zr0.10)x(Al2O3)(1-x) nanocomposite films are compared and analyzed. The presence of the inductive part in the equivalent circuits for the samples deposited in Ar gas below and beyond percolation threshold is shown. It is revealed that the equivalent circuits of the
(Fe0.45Co0.45Zr0.10)x(Al2O3)(1-x) nanocomposites produced in argon + oxygen gas mixture show more strong inductive contribution than ones sputtered in pure argon
Gigantic Magnetoresistive Effect in n-SiSiO2Ni Nanostructures Fabricated by the Template-Assisted Electrochemical Deposition
The study of the carrier transport and magnetotransport in n-Si/SiO2/Ni nanostructures with granular Ni nanorods embedded into the pores in SiO2 was performed over the temperature range 2 β 300 K and at the magnetic field induction up to 8 T. In n-Si/SiO2/Ni nanostructures at
temperatures of about 25 K a huge positive MR effect is observed. Possible mechanisms of the effect is discussed
Magnetotransport in Nanostructured Ni Films Electrodeposited on Si Substrate
The study of electrical resistivity ο² and magnetoresistance MR in nanogranular Ni films was performed over the temperature range 2 - 300 K and at the magnetic field induction B up to 8 T. The Ni layers having a thickness of about 500 nm were prepared by electrodeposition on n-Si wafers. According to an X-ray diffraction study, a strongly textured face-centered cubic structure was formed in the as-deposited films with an
average grain sizes of about 10 - 70 nm. Experiments have demonstrated that the magnetic field and temperature dependences of the MR effect in Ni films shown two main peculiarities: (1) dependencies on the mutual orientations of vectors B, current and the film plane; (2) two contributions to
the MR - negative anisotropic magnetoresistance and positive Lorentz-like MR
ΠΡΠΈΡ ΠΎΡΡΠ·ΡΠΎΠ»ΠΎΠ³ΡΡΠ½Ρ ΠΎΡΠΎΠ±Π»ΠΈΠ²ΠΎΡΡΡ ΠΏΡΠΎΡΠ²Ρ ΠΊΡΠ΅Π°ΡΠΈΠ²Π½ΠΎΡΡΡ ΡΡΡΠ΄Π΅Π½ΡΡΠ²
Lecture-Conversation in Methodological Instrumentation of Russian as a Foreign Language Teacher
The article justifies the urgency of development of lectures-conversations when presenting the theoretical material of the training courses to foreigners. Attention is drawn to the difficulties of foreign students in listening the lecture in its traditional understanding as a monologue of the teacher. The importance of a methodical understanding of the theoretical presentation of the material in question-answer form is emphasised. Scientific novelty and practical significance of research results is seen in the fact that the issues are described from the point of view of the purpose of their performance to the students, the positive effect of the issue, the shortcomings of the question. It is assumed that within this form of classes the teacher can introduce new material, systematize theoretical information studied by students, consolidate studentsβ knowledge in the subject area, take into account communicative and personal aspects of adaptation of foreign students in Russian educational environment. On the original authorβs material of lecture-conversation on theoretical grammar the kinds of questions are demonstrated that are appropriate to use in dialogue with foreign students. Methodological training for teachers in the formulation of various types of questions is proposed. It is concluded that the systematic use of lecture-conversation in teaching practice will contribute to overcoming the communicative and psychological difficulties of foreign students listening to lectures in a foreign language (Russian) that meets the modern trends of multicultural education
Non-obvious Problems in Clark Electrode Application at Elevated Temperature and Ways of Their Elimination
Well-known cause of frequent failures of closed oxygen sensors is the appearance of gas bubbles in the electrolyte. The problem is traditionally associated with insufficient sealing of the sensor that is not always true. Study of a typical temperature regime of measurement system based on Clark sensor showed that spontaneous release of the gas phase is a natural effect caused by periodic warming of the sensor to a temperature of the test liquid. The warming of the sensor together with the incubation medium causes oversaturation of electrolyte by dissolved gases and the allocation of gas bubbles. The lower rate of sensor heating in comparison with the medium reduces but does not eliminate the manifestation of this effect. It is experimentally established, that with each cycle of heating of measuring system up to 37 β C followed by cooling the volume of gas phase in the electrolyte (KCl; 60 g/L; 400 L) increased by 0.6 L approximately. Thus, during just several cycles it can dramatically degrade the characteristics of the sensor. A method was developed in which the oxygen sensor is heated in contact with the liquid, (depleted of dissolved gases), allowing complete exclusion of the above-mentioned effect
ΠΡΠ΅Π½ΠΊΠ° ΡΡΠΎΠΈΠΌΠΎΡΡΠΈ ΡΠΈΡΡΠΎΠ²ΡΡ ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ Π°ΠΊΡΠΈΠ²ΠΎΠ²: ΠΏΡΠΈΠ½ΡΠΈΠΏΡ, ΡΠ°ΠΊΡΠΎΡΡ, ΠΏΠΎΠ΄Ρ ΠΎΠ΄Ρ ΠΈ ΠΌΠ΅ΡΠΎΠ΄Ρ
The object of the study is digital assets and digital intellectual assets as objects of valuation. The subject of the research are the principles, factors, approaches and methods of assessing the value of digital assets, including digital intellectual assets, in order to involve them in civil turnover in modern realities. The relevance of the problem is caused, on the one hand, by the formation of new types of assets β digital, including intellectual β in the context of digitalization of the economy and public relations, on the other β by the uncertainties arising during their identification, as well as the need to substantiate the applicability of valuation principles, approaches and methods to determine the value of such assets for further involvement in civil turnover. The purpose of the study is to substantiate the principles, factors, approaches and methods applicable to the valuation of digital intellectual assets, their approbation on specific examples (domain names). Methods of statistical and comparative analysis, generalization, classification, and valuation were used. The essential characteristics of digital intellectual assets have been defined: intangible nature, creation with the help of digital technology; manifestation of value in the information system; the ability to civil (property) turnover as objects of intellectual rights. The applicability of valuation principles, income and comparative approaches to the valuation of digital intellectual assets is substantiated. The factors influencing the value of digital intellectual assets, as well as specific factors characteristic of one of the types of digital intellectual assets β domain names are identified. An example of using the analogs method to estimate the cost of a second-level domain name in the framework of a comparative approach is shown. It is concluded that digital intellectual assets satisfying all essential characteristics can be put on the balance sheet as intangible assets, and their market value is determined on the basis of income or comparative approaches using the principles of evaluation and identified factors.ΠΠ±ΡΠ΅ΠΊΡΠΎΠΌ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π²ΡΡΡΡΠΏΠ°ΡΡ ΡΠΈΡΡΠΎΠ²ΡΠ΅ Π°ΠΊΡΠΈΠ²Ρ ΠΈ ΡΠΈΡΡΠΎΠ²ΡΠ΅ ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΠ΅ Π°ΠΊΡΠΈΠ²Ρ ΠΊΠ°ΠΊ ΠΎΠ±ΡΠ΅ΠΊΡΡ ΡΡΠΎΠΈΠΌΠΎΡΡΠ½ΠΎΠΉ ΠΎΡΠ΅Π½ΠΊΠΈ. ΠΡΠ΅Π΄ΠΌΠ΅ΡΠΎΠΌ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΡΠ²Π»ΡΡΡΡΡ ΠΏΡΠΈΠ½ΡΠΈΠΏΡ, ΡΠ°ΠΊΡΠΎΡΡ, ΠΏΠΎΠ΄Ρ
ΠΎΠ΄Ρ ΠΈ ΠΌΠ΅ΡΠΎΠ΄Ρ ΠΎΡΠ΅Π½ΠΊΠΈ ΡΡΠΎΠΈΠΌΠΎΡΡΠΈ ΡΠΈΡΡΠΎΠ²ΡΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ², Π² ΡΠΎΠΌ ΡΠΈΡΠ»Π΅ ΡΠΈΡΡΠΎΠ²ΡΡ
ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ², Π² ΡΠ΅Π»ΡΡ
ΠΈΡ
Π²ΠΎΠ²Π»Π΅ΡΠ΅Π½ΠΈΡ Π² Π³ΡΠ°ΠΆΠ΄Π°Π½ΡΠΊΠΈΠΉ ΠΎΠ±ΠΎΡΠΎΡ Π² ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠ΅Π°Π»ΠΈΡΡ
. ΠΠΊΡΡΠ°Π»ΡΠ½ΠΎΡΡΡ ΠΏΡΠΎΠ±Π»Π΅ΠΌΠ°ΡΠΈΠΊΠΈ ΠΎΠ±ΡΡΠ»ΠΎΠ²Π»Π΅Π½Π°, Ρ ΠΎΠ΄Π½ΠΎΠΉ ΡΡΠΎΡΠΎΠ½Ρ, ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ Π½ΠΎΠ²ΡΡ
Π²ΠΈΠ΄ΠΎΠ² Π°ΠΊΡΠΈΠ²ΠΎΠ² β ΡΠΈΡΡΠΎΠ²ΡΡ
, Π² ΡΠΎΠΌ ΡΠΈΡΠ»Π΅ ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
β Π² ΡΡΠ»ΠΎΠ²ΠΈΡΡ
ΡΠΈΡΡΠΎΠ²ΠΈΠ·Π°ΡΠΈΠΈ ΡΠΊΠΎΠ½ΠΎΠΌΠΈΠΊΠΈ ΠΈ ΠΎΠ±ΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΡ
ΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΠΉ, Ρ Π΄ΡΡΠ³ΠΎΠΉ β Π½Π΅ΡΡΠ½ΠΎΡΡΡΠΌΠΈ, Π²ΠΎΠ·Π½ΠΈΠΊΠ°ΡΡΠΈΠΌΠΈ ΠΏΡΠΈ ΠΈΡ
ΠΈΠ΄Π΅Π½ΡΠΈΡΠΈΠΊΠ°ΡΠΈΠΈ, Π° ΡΠ°ΠΊΠΆΠ΅ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎΡΡΡΡ ΠΎΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΡ ΠΏΡΠΈΠΌΠ΅Π½ΠΈΠΌΠΎΡΡΠΈ ΠΎΡΠ΅Π½ΠΎΡΠ½ΡΡ
ΠΏΡΠΈΠ½ΡΠΈΠΏΠΎΠ², ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ΠΎΠ² ΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² ΠΊ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΡΠΎΠΈΠΌΠΎΡΡΠΈ ΡΠ°ΠΊΠΈΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ² Π΄Π»Ρ Π΄Π°Π»ΡΠ½Π΅ΠΉΡΠ΅Π³ΠΎ Π²ΠΎΠ²Π»Π΅ΡΠ΅Π½ΠΈΡ Π² Π³ΡΠ°ΠΆΠ΄Π°Π½ΡΠΊΠΈΠΉ ΠΎΠ±ΠΎΡΠΎΡ. Π¦Π΅Π»Ρ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π·Π°ΠΊΠ»ΡΡΠ°Π΅ΡΡΡ Π² ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠΈ ΠΈΠ΄Π΅Π½ΡΠΈΡΠΈΠΊΠ°ΡΠΈΠΎΠ½Π½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΡΠΈΡΡΠΎΠ²ΡΡ
ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ², ΠΎΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΠΈ ΠΏΡΠΈΠ½ΡΠΈΠΏΠΎΠ², ΡΠ°ΠΊΡΠΎΡΠΎΠ², ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ΠΎΠ² ΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ², ΠΏΡΠΈΠΌΠ΅Π½ΠΈΠΌΡΡ
ΠΊ ΠΈΡ
ΡΡΠΎΠΈΠΌΠΎΡΡΠ½ΠΎΠΉ ΠΎΡΠ΅Π½ΠΊΠ΅, Ρ ΠΏΠΎΡΠ»Π΅Π΄ΡΡΡΠ΅ΠΉ Π°ΠΏΡΠΎΠ±Π°ΡΠΈΠ΅ΠΉ Π½Π° ΠΊΠΎΠ½ΠΊΡΠ΅ΡΠ½ΡΡ
ΠΏΡΠΈΠΌΠ΅ΡΠ°Ρ
(Π΄ΠΎΠΌΠ΅Π½Π½ΡΠ΅ ΠΈΠΌΠ΅Π½Π°). ΠΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Ρ ΠΌΠ΅ΡΠΎΠ΄Ρ ΡΡΠ°ΡΠΈΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΈ ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ Π°Π½Π°Π»ΠΈΠ·ΠΎΠ², ΠΎΠ±ΠΎΠ±ΡΠ΅Π½ΠΈΡ, ΠΊΠ»Π°ΡΡΠΈΡΠΈΠΊΠ°ΡΠΈΠΈ, ΡΡΠΎΠΈΠΌΠΎΡΡΠ½ΠΎΠΉ ΠΎΡΠ΅Π½ΠΊΠΈ. ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Ρ ΡΡΡΠ½ΠΎΡΡΠ½ΡΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΠΈΡΡΠΎΠ²ΡΡ
ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ²: Π½Π΅ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΡΠ½Π°Ρ ΠΏΡΠΈΡΠΎΠ΄Π°, ΡΠΎΠ·Π΄Π°Π½ΠΈΠ΅ Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΡΠΈΡΡΠΎΠ²ΠΎΠΉ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ; ΠΏΡΠΎΡΠ²Π»Π΅Π½ΠΈΠ΅ ΡΠ΅Π½Π½ΠΎΡΡΠΈ Π² ΠΈΠ½ΡΠΎΡΠΌΠ°ΡΠΈΠΎΠ½Π½ΠΎΠΉ ΡΠΈΡΡΠ΅ΠΌΠ΅; ΡΠΏΠΎΡΠΎΠ±Π½ΠΎΡΡΡ ΠΊ Π³ΡΠ°ΠΆΠ΄Π°Π½ΡΠΊΠΎΠΌΡ (ΠΈΠΌΡΡΠ΅ΡΠ²Π΅Π½Π½ΠΎΠΌΡ) ΠΎΠ±ΠΎΡΠΎΡΡ Π² ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
ΠΏΡΠ°Π². ΠΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½Π° ΠΏΡΠΈΠΌΠ΅Π½ΠΈΠΌΠΎΡΡΡ ΠΎΡΠ΅Π½ΠΎΡΠ½ΡΡ
ΠΏΡΠΈΠ½ΡΠΈΠΏΠΎΠ², Π΄ΠΎΡ
ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΈ ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ΠΎΠ² ΠΊ ΠΎΡΠ΅Π½ΠΊΠ΅ ΡΡΠΎΠΈΠΌΠΎΡΡΠΈ ΡΠΈΡΡΠΎΠ²ΡΡ
ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ². ΠΡΡΠ²Π»Π΅Π½Ρ ΡΠ°ΠΊΡΠΎΡΡ, Π²Π»ΠΈΡΡΡΠΈΠ΅ Π½Π° ΡΡΠΎΠΈΠΌΠΎΡΡΡ ΡΠΈΡΡΠΎΠ²ΡΡ
ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ², Π° ΡΠ°ΠΊΠΆΠ΅ ΡΠΏΠ΅ΡΠΈΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠ°ΠΊΡΠΎΡΡ, Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠ½ΡΠ΅ Π΄Π»Ρ ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΈΠ· Π²ΠΈΠ΄ΠΎΠ² ΡΠΈΡΡΠΎΠ²ΡΡ
ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΡ
Π°ΠΊΡΠΈΠ²ΠΎΠ² β Π΄ΠΎΠΌΠ΅Π½Π½ΡΡ
ΠΈΠΌΠ΅Π½. ΠΠΎΠΊΠ°Π·Π°Π½ ΠΏΡΠΈΠΌΠ΅Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ ΠΌΠ΅ΡΠΎΠ΄Π° Π°Π½Π°Π»ΠΎΠ³ΠΎΠ² ΠΊ ΠΎΡΠ΅Π½ΠΊΠ΅ ΡΡΠΎΠΈΠΌΠΎΡΡΠΈ Π΄ΠΎΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΠΈΠΌΠ΅Π½ΠΈ Π²ΡΠΎΡΠΎΠ³ΠΎ ΡΡΠΎΠ²Π½Ρ Π² ΡΠ°ΠΌΠΊΠ°Ρ
ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄Π°. Π‘Π΄Π΅Π»Π°Π½ Π²ΡΠ²ΠΎΠ΄ ΠΎ ΡΠΎΠΌ, ΡΡΠΎ ΡΠΈΡΡΠΎΠ²ΡΠ΅ ΠΈΠ½ΡΠ΅Π»Π»Π΅ΠΊΡΡΠ°Π»ΡΠ½ΡΠ΅ Π°ΠΊΡΠΈΠ²Ρ, ΡΠ΄ΠΎΠ²Π»Π΅ΡΠ²ΠΎΡΡΡΡΠΈΠ΅ Π²ΡΠ΅ΠΌ ΡΡΡΠ½ΠΎΡΡΠ½ΡΠΌ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ°ΠΌ, ΠΌΠΎΠ³ΡΡ Π±ΡΡΡ ΠΏΠΎΡΡΠ°Π²Π»Π΅Π½Ρ Π½Π° Π±Π°Π»Π°Π½Ρ ΠΊΠ°ΠΊ Π½Π΅ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»ΡΠ½ΡΠ΅ Π°ΠΊΡΠΈΠ²Ρ, Π° ΠΈΡ
ΡΡΠ½ΠΎΡΠ½Π°Ρ ΡΡΠΎΠΈΠΌΠΎΡΡΡ ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΠ΅ΡΡΡ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π΄ΠΎΡ
ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΈΠ»ΠΈ ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄ΠΎΠ² Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΠΏΡΠΈΠ½ΡΠΈΠΏΠΎΠ² ΠΎΡΠ΅Π½ΠΊΠΈ ΠΈ Π²ΡΡΠ²Π»Π΅Π½Π½ΡΡ
ΡΠ°ΠΊΡΠΎΡΠΎΠ²
Mechanisms of carrier transport in Cux(SiO2)1-x nanocomposites manufactured by ion-beam sputtering with Ar ions
The present paper investigates the temperature/frequency dependences of admittance Z in the granular
Cux(SiO2)1x nanocomposite lms around the percolation threshold xC in the temperature range of 4 30 K
and frequencies of 20 MHz. The behavior of low-frequency ReZ(T) dependences displayed the predominance
of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold
xC = 0:59 and nearly metallic behaviour beyond the xC. The high-frequency curves ReZ(f) at temperatures
T > 10 K for the samples with x < xC exhibited behavior close to ReZ(f) fs with s 1:0 which is very
similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > xC), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles
Impedance model of metal-dielectric nanocomposites produced by ion-beam sputtering in vacuum conditions and its experimental verification for thin films of (FeCoZr)x(PZT)(100-x)
The paper presents results of testing electric properties (resistance, capacity and phase angle in an
equivalent parallel circuit) of ferromagnetic alloy-dielectric nanocomposites (FeCoZr)x(PZT)(100 x) produced
by ion-beam sputtering in vacuum conditions. The measurements have been performed using alternating current within the frequency range of 50 Hz -1 MHz for measuring temperatures ranging from 77 K to 373 K. In nanocomposites (CoFeZr)x(PZT)(100 x), produced by ion beam sputtering using a beam of combined argon and oxygen ions, for x approaching the percolation threshold, frequency dependences of the phase angle 4 that resemble those occurring in RLC parallel circuits have been observed. In the low frequency area, the phase angle of 90 - 0 occurs. It corresponds to the capacitive type of conduction. In the high frequency area, the inductive type of conduction with 0 - 90 occurs. At the resonance frequency f0, characterized by the phase angle of 0 , the capacity value reaches its strong local minimum. A theoretical basis for a model of the AC hopping conduction for metal-dielectric nanocomposites has been developed and on that basis frequency dependences of the phase angle, resistance and capacitive current density components have been analyzed. The obtained theoretical and experimental results have been compared
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