213 research outputs found

    Knowledge structures and their representation in the language

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    The authors define and describe the components which build the structure of the frame "touch

    Equivalent Circuits for FeCoZr-Al2O3 Nanocomposite Films Deposited in Argon and Argon-Oxygen Atmospheres

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    The investigation of the equivalent circuits for granular nanocomposite films was performed according to the method of the impedance spectroscopy. The films, consisted of the Fe0.45Co0.45Zr0.10 ferromagnetic alloy nanoparticles embedded into amorphous dielectric alumina matrix, were deposited in pure argon or argon and oxygen mixture. The temperature dependences of active and reactive components in the equivalent circuits for the (Fe0.45Co0.45Zr0.10)x(Al2O3)(1-x) nanocomposite films are compared and analyzed. The presence of the inductive part in the equivalent circuits for the samples deposited in Ar gas below and beyond percolation threshold is shown. It is revealed that the equivalent circuits of the (Fe0.45Co0.45Zr0.10)x(Al2O3)(1-x) nanocomposites produced in argon + oxygen gas mixture show more strong inductive contribution than ones sputtered in pure argon

    Gigantic Magnetoresistive Effect in n-SiSiO2Ni Nanostructures Fabricated by the Template-Assisted Electrochemical Deposition

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    The study of the carrier transport and magnetotransport in n-Si/SiO2/Ni nanostructures with granular Ni nanorods embedded into the pores in SiO2 was performed over the temperature range 2 – 300 K and at the magnetic field induction up to 8 T. In n-Si/SiO2/Ni nanostructures at temperatures of about 25 K a huge positive MR effect is observed. Possible mechanisms of the effect is discussed

    Magnetotransport in Nanostructured Ni Films Electrodeposited on Si Substrate

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    The study of electrical resistivity  and magnetoresistance MR in nanogranular Ni films was performed over the temperature range 2 - 300 K and at the magnetic field induction B up to 8 T. The Ni layers having a thickness of about 500 nm were prepared by electrodeposition on n-Si wafers. According to an X-ray diffraction study, a strongly textured face-centered cubic structure was formed in the as-deposited films with an average grain sizes of about 10 - 70 nm. Experiments have demonstrated that the magnetic field and temperature dependences of the MR effect in Ni films shown two main peculiarities: (1) dependencies on the mutual orientations of vectors B, current and the film plane; (2) two contributions to the MR - negative anisotropic magnetoresistance and positive Lorentz-like MR

    Lecture-Conversation in Methodological Instrumentation of Russian as a Foreign Language Teacher

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    The article justifies the urgency of development of lectures-conversations when presenting the theoretical material of the training courses to foreigners. Attention is drawn to the difficulties of foreign students in listening the lecture in its traditional understanding as a monologue of the teacher. The importance of a methodical understanding of the theoretical presentation of the material in question-answer form is emphasised. Scientific novelty and practical significance of research results is seen in the fact that the issues are described from the point of view of the purpose of their performance to the students, the positive effect of the issue, the shortcomings of the question. It is assumed that within this form of classes the teacher can introduce new material, systematize theoretical information studied by students, consolidate students’ knowledge in the subject area, take into account communicative and personal aspects of adaptation of foreign students in Russian educational environment. On the original author’s material of lecture-conversation on theoretical grammar the kinds of questions are demonstrated that are appropriate to use in dialogue with foreign students. Methodological training for teachers in the formulation of various types of questions is proposed. It is concluded that the systematic use of lecture-conversation in teaching practice will contribute to overcoming the communicative and psychological difficulties of foreign students listening to lectures in a foreign language (Russian) that meets the modern trends of multicultural education

    Non-obvious Problems in Clark Electrode Application at Elevated Temperature and Ways of Their Elimination

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    Well-known cause of frequent failures of closed oxygen sensors is the appearance of gas bubbles in the electrolyte. The problem is traditionally associated with insufficient sealing of the sensor that is not always true. Study of a typical temperature regime of measurement system based on Clark sensor showed that spontaneous release of the gas phase is a natural effect caused by periodic warming of the sensor to a temperature of the test liquid. The warming of the sensor together with the incubation medium causes oversaturation of electrolyte by dissolved gases and the allocation of gas bubbles. The lower rate of sensor heating in comparison with the medium reduces but does not eliminate the manifestation of this effect. It is experimentally established, that with each cycle of heating of measuring system up to 37 ∘ C followed by cooling the volume of gas phase in the electrolyte (KCl; 60 g/L; 400 L) increased by 0.6 L approximately. Thus, during just several cycles it can dramatically degrade the characteristics of the sensor. A method was developed in which the oxygen sensor is heated in contact with the liquid, (depleted of dissolved gases), allowing complete exclusion of the above-mentioned effect

    ΠžΡ†Π΅Π½ΠΊΠ° стоимости Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ²: ΠΏΡ€ΠΈΠ½Ρ†ΠΈΠΏΡ‹, Ρ„Π°ΠΊΡ‚ΠΎΡ€Ρ‹, ΠΏΠΎΠ΄Ρ…ΠΎΠ΄Ρ‹ ΠΈ ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹

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    The object of the study is digital assets and digital intellectual assets as objects of valuation. The subject of the research are the principles, factors, approaches and methods of assessing the value of digital assets, including digital intellectual assets, in order to involve them in civil turnover in modern realities. The relevance of the problem is caused, on the one hand, by the formation of new types of assets β€” digital, including intellectual β€” in the context of digitalization of the economy and public relations, on the other β€” by the uncertainties arising during their identification, as well as the need to substantiate the applicability of valuation principles, approaches and methods to determine the value of such assets for further involvement in civil turnover. The purpose of the study is to substantiate the principles, factors, approaches and methods applicable to the valuation of digital intellectual assets, their approbation on specific examples (domain names). Methods of statistical and comparative analysis, generalization, classification, and valuation were used. The essential characteristics of digital intellectual assets have been defined: intangible nature, creation with the help of digital technology; manifestation of value in the information system; the ability to civil (property) turnover as objects of intellectual rights. The applicability of valuation principles, income and comparative approaches to the valuation of digital intellectual assets is substantiated. The factors influencing the value of digital intellectual assets, as well as specific factors characteristic of one of the types of digital intellectual assets β€” domain names are identified. An example of using the analogs method to estimate the cost of a second-level domain name in the framework of a comparative approach is shown. It is concluded that digital intellectual assets satisfying all essential characteristics can be put on the balance sheet as intangible assets, and their market value is determined on the basis of income or comparative approaches using the principles of evaluation and identified factors.ΠžΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠΌ исслСдования Π²Ρ‹ΡΡ‚ΡƒΠΏΠ°ΡŽΡ‚ Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Π΅ Π°ΠΊΡ‚ΠΈΠ²Ρ‹ ΠΈ Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Π΅ ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Π΅ Π°ΠΊΡ‚ΠΈΠ²Ρ‹ ΠΊΠ°ΠΊ ΠΎΠ±ΡŠΠ΅ΠΊΡ‚Ρ‹ стоимостной ΠΎΡ†Π΅Π½ΠΊΠΈ. ΠŸΡ€Π΅Π΄ΠΌΠ΅Ρ‚ΠΎΠΌ исслСдования ΡΠ²Π»ΡΡŽΡ‚ΡΡ ΠΏΡ€ΠΈΠ½Ρ†ΠΈΠΏΡ‹, Ρ„Π°ΠΊΡ‚ΠΎΡ€Ρ‹, ΠΏΠΎΠ΄Ρ…ΠΎΠ΄Ρ‹ ΠΈ ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹ ΠΎΡ†Π΅Π½ΠΊΠΈ стоимости Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ², Π² Ρ‚ΠΎΠΌ числС Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ², Π² цСлях ΠΈΡ… вовлСчСния Π² граТданский ΠΎΠ±ΠΎΡ€ΠΎΡ‚ Π² соврСмСнных рСалиях. ΠΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ ΠΏΡ€ΠΎΠ±Π»Π΅ΠΌΠ°Ρ‚ΠΈΠΊΠΈ обусловлСна, с ΠΎΠ΄Π½ΠΎΠΉ стороны, Ρ„ΠΎΡ€ΠΌΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ Π½ΠΎΠ²Ρ‹Ρ… Π²ΠΈΠ΄ΠΎΠ² Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ² β€” Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ…, Π² Ρ‚ΠΎΠΌ числС ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… β€” Π² условиях Ρ†ΠΈΡ„Ρ€ΠΎΠ²ΠΈΠ·Π°Ρ†ΠΈΠΈ экономики ΠΈ общСствСнных ΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΠΉ, с Π΄Ρ€ΡƒΠ³ΠΎΠΉ β€” нСясностями, Π²ΠΎΠ·Π½ΠΈΠΊΠ°ΡŽΡ‰ΠΈΠΌΠΈ ΠΏΡ€ΠΈ ΠΈΡ… ΠΈΠ΄Π΅Π½Ρ‚ΠΈΡ„ΠΈΠΊΠ°Ρ†ΠΈΠΈ, Π° Ρ‚Π°ΠΊΠΆΠ΅ Π½Π΅ΠΎΠ±Ρ…ΠΎΠ΄ΠΈΠΌΠΎΡΡ‚ΡŒΡŽ обоснования примСнимости ΠΎΡ†Π΅Π½ΠΎΡ‡Π½Ρ‹Ρ… ΠΏΡ€ΠΈΠ½Ρ†ΠΈΠΏΠΎΠ², ΠΏΠΎΠ΄Ρ…ΠΎΠ΄ΠΎΠ² ΠΈ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ² ΠΊ ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½ΠΈΡŽ стоимости Ρ‚Π°ΠΊΠΈΡ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ² для дальнСйшСго вовлСчСния Π² граТданский ΠΎΠ±ΠΎΡ€ΠΎΡ‚. ЦСль исслСдования Π·Π°ΠΊΠ»ΡŽΡ‡Π°Π΅Ρ‚ΡΡ Π² ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½ΠΈΠΈ ΠΈΠ΄Π΅Π½Ρ‚ΠΈΡ„ΠΈΠΊΠ°Ρ†ΠΈΠΎΠ½Π½Ρ‹Ρ… характСристик Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ², обосновании ΠΏΡ€ΠΈΠ½Ρ†ΠΈΠΏΠΎΠ², Ρ„Π°ΠΊΡ‚ΠΎΡ€ΠΎΠ², ΠΏΠΎΠ΄Ρ…ΠΎΠ΄ΠΎΠ² ΠΈ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ², ΠΏΡ€ΠΈΠΌΠ΅Π½ΠΈΠΌΡ‹Ρ… ΠΊ ΠΈΡ… стоимостной ΠΎΡ†Π΅Π½ΠΊΠ΅, с ΠΏΠΎΡΠ»Π΅Π΄ΡƒΡŽΡ‰Π΅ΠΉ Π°ΠΏΡ€ΠΎΠ±Π°Ρ†ΠΈΠ΅ΠΉ Π½Π° ΠΊΠΎΠ½ΠΊΡ€Π΅Ρ‚Π½Ρ‹Ρ… ΠΏΡ€ΠΈΠΌΠ΅Ρ€Π°Ρ… (Π΄ΠΎΠΌΠ΅Π½Π½Ρ‹Π΅ ΠΈΠΌΠ΅Π½Π°). Π˜ΡΠΏΠΎΠ»ΡŒΠ·ΠΎΠ²Π°Π½Ρ‹ ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹ статистичСского ΠΈ ΡΡ€Π°Π²Π½ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ Π°Π½Π°Π»ΠΈΠ·ΠΎΠ², обобщСния, классификации, стоимостной ΠΎΡ†Π΅Π½ΠΊΠΈ. ΠžΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½Ρ‹ сущностныС характСристики Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ²: Π½Π΅ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»ΡŒΠ½Π°Ρ ΠΏΡ€ΠΈΡ€ΠΎΠ΄Π°, созданиС с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ Ρ†ΠΈΡ„Ρ€ΠΎΠ²ΠΎΠΉ Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΈ; проявлСниС цСнности Π² ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΎΠ½Π½ΠΎΠΉ систСмС; ΡΠΏΠΎΡΠΎΠ±Π½ΠΎΡΡ‚ΡŒ ΠΊ граТданскому (имущСсвСнному) ΠΎΠ±ΠΎΡ€ΠΎΡ‚Ρƒ Π² качСствС ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… ΠΏΡ€Π°Π². Обоснована ΠΏΡ€ΠΈΠΌΠ΅Π½ΠΈΠΌΠΎΡΡ‚ΡŒ ΠΎΡ†Π΅Π½ΠΎΡ‡Π½Ρ‹Ρ… ΠΏΡ€ΠΈΠ½Ρ†ΠΈΠΏΠΎΠ², Π΄ΠΎΡ…ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΈ ΡΡ€Π°Π²Π½ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠ΄Ρ…ΠΎΠ΄ΠΎΠ² ΠΊ ΠΎΡ†Π΅Π½ΠΊΠ΅ стоимости Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ². ВыявлСны Ρ„Π°ΠΊΡ‚ΠΎΡ€Ρ‹, Π²Π»ΠΈΡΡŽΡ‰ΠΈΠ΅ Π½Π° ΡΡ‚ΠΎΠΈΠΌΠΎΡΡ‚ΡŒ Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ², Π° Ρ‚Π°ΠΊΠΆΠ΅ спСцифичСскиС Ρ„Π°ΠΊΡ‚ΠΎΡ€Ρ‹, Ρ…Π°Ρ€Π°ΠΊΡ‚Π΅Ρ€Π½Ρ‹Π΅ для ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΈΠ· Π²ΠΈΠ΄ΠΎΠ² Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Ρ… ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Ρ… Π°ΠΊΡ‚ΠΈΠ²ΠΎΠ² β€” Π΄ΠΎΠΌΠ΅Π½Π½Ρ‹Ρ… ΠΈΠΌΠ΅Π½. Показан ΠΏΡ€ΠΈΠΌΠ΅Ρ€ использования ΠΌΠ΅Ρ‚ΠΎΠ΄Π° Π°Π½Π°Π»ΠΎΠ³ΠΎΠ² ΠΊ ΠΎΡ†Π΅Π½ΠΊΠ΅ стоимости Π΄ΠΎΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΠΈΠΌΠ΅Π½ΠΈ Π²Ρ‚ΠΎΡ€ΠΎΠ³ΠΎ уровня Π² Ρ€Π°ΠΌΠΊΠ°Ρ… ΡΡ€Π°Π²Π½ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠ΄Ρ…ΠΎΠ΄Π°. Π‘Π΄Π΅Π»Π°Π½ Π²Ρ‹Π²ΠΎΠ΄ ΠΎ Ρ‚ΠΎΠΌ, Ρ‡Ρ‚ΠΎ Ρ†ΠΈΡ„Ρ€ΠΎΠ²Ρ‹Π΅ ΠΈΠ½Ρ‚Π΅Π»Π»Π΅ΠΊΡ‚ΡƒΠ°Π»ΡŒΠ½Ρ‹Π΅ Π°ΠΊΡ‚ΠΈΠ²Ρ‹, ΡƒΠ΄ΠΎΠ²Π»Π΅Ρ‚Π²ΠΎΡ€ΡΡŽΡ‰ΠΈΠ΅ всСм сущностным характСристикам, ΠΌΠΎΠ³ΡƒΡ‚ Π±Ρ‹Ρ‚ΡŒ поставлСны Π½Π° баланс ΠΊΠ°ΠΊ Π½Π΅ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»ΡŒΠ½Ρ‹Π΅ Π°ΠΊΡ‚ΠΈΠ²Ρ‹, Π° ΠΈΡ… рыночная ΡΡ‚ΠΎΠΈΠΌΠΎΡΡ‚ΡŒ опрСдСляСтся Π½Π° основС Π΄ΠΎΡ…ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΈΠ»ΠΈ ΡΡ€Π°Π²Π½ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ ΠΏΠΎΠ΄Ρ…ΠΎΠ΄ΠΎΠ² с использованиСм ΠΏΡ€ΠΈΠ½Ρ†ΠΈΠΏΠΎΠ² ΠΎΡ†Π΅Π½ΠΊΠΈ ΠΈ выявлСнных Ρ„Π°ΠΊΡ‚ΠΎΡ€ΠΎΠ²

    Mechanisms of carrier transport in Cux(SiO2)1-x nanocomposites manufactured by ion-beam sputtering with Ar ions

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    The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cux(SiO2)1x nanocomposite lms around the percolation threshold xC in the temperature range of 4 30 K and frequencies of 20 MHz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold xC = 0:59 and nearly metallic behaviour beyond the xC. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < xC exhibited behavior close to ReZ(f) fs with s 1:0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > xC), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles

    Impedance model of metal-dielectric nanocomposites produced by ion-beam sputtering in vacuum conditions and its experimental verification for thin films of (FeCoZr)x(PZT)(100-x)

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    The paper presents results of testing electric properties (resistance, capacity and phase angle in an equivalent parallel circuit) of ferromagnetic alloy-dielectric nanocomposites (FeCoZr)x(PZT)(100 x) produced by ion-beam sputtering in vacuum conditions. The measurements have been performed using alternating current within the frequency range of 50 Hz -1 MHz for measuring temperatures ranging from 77 K to 373 K. In nanocomposites (CoFeZr)x(PZT)(100 x), produced by ion beam sputtering using a beam of combined argon and oxygen ions, for x approaching the percolation threshold, frequency dependences of the phase angle 4 that resemble those occurring in RLC parallel circuits have been observed. In the low frequency area, the phase angle of 90 - 0 occurs. It corresponds to the capacitive type of conduction. In the high frequency area, the inductive type of conduction with 0 - 90 occurs. At the resonance frequency f0, characterized by the phase angle of 0 , the capacity value reaches its strong local minimum. A theoretical basis for a model of the AC hopping conduction for metal-dielectric nanocomposites has been developed and on that basis frequency dependences of the phase angle, resistance and capacitive current density components have been analyzed. The obtained theoretical and experimental results have been compared
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