69 research outputs found
Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC
The electronic band structure of as-grown and doped graphene grown on the
carbon face of SiC is studied by high-resolution angle-resolved photoemission
spectroscopy, where we observe both rotations between adjacent layers and
AB-stacking. The band structure of quasi-freestanding AB- bilayers is directly
compared with bilayer graphene grown on the Si-face of SiC to study the impact
of the substrate on the electronic properties of epitaxial graphene. Our
results show that the C-face films are nearly freestanding from an electronic
point of view, due to the rotations between graphene layers.Comment: http://link.aps.org/doi/10.1103/PhysRevB.81.24141
Evaluation of conduction eigenchannels of an adatom probed by an STM tip
Ballistic conductance through a single atom adsorbed on a metallic surface
and probed by a scanning tunneling microscope (STM) tip can be decomposed into
eigenchannel contributions, which can be potentially obtained from shot noise
measurements. Our density functional theory calculations provide evidence that
transmission probabilities of these eigenchannels encode information on the
modifications of the adatom's local density of states caused by its interaction
with the STM tip. In the case of open shell atoms, this can be revealed in
nonmonotonic behavior of the eigenchannel's transmissions as a function of the
tip-adatom separation.Comment: 4.5 pages, 5 figures, REVTe
Many-body interactions in quasi-freestanding graphene
The Landau-Fermi liquid picture for quasiparticles assumes that charge
carriers are dressed by many-body interactions, forming one of the fundamental
theories of solids. Whether this picture still holds for a semimetal like
graphene at the neutrality point, i.e., when the chemical potential coincides
with the Dirac point energy, is one of the long-standing puzzles in this field.
Here we present such a study in quasi-freestanding graphene by using
high-resolution angle-resolved photoemission spectroscopy. We see the
electron-electron and electron-phonon interactions go through substantial
changes when the semimetallic regime is approached, including renormalizations
due to strong electron-electron interactions with similarities to marginal
Fermi liquid behavior. These findings set a new benchmark in our understanding
of many-body physics in graphene and a variety of novel materials with Dirac
fermions.Comment: PNAS 2011 ; published ahead of print June 27, 201
Electron-Phonon Coupling in Highly-Screened Graphene
Photoemission studies of graphene have resulted in a long-standing
controversy concerning the strength of the experimental electron-phonon
interaction in comparison with theoretical calculations. Using high-resolution
angle-resolved photoemission spectroscopy we study graphene grown on a copper
substrate, where the metallic screening of the substrate substantially reduces
the electron-electron interaction, simplifying the comparison of the
electron-phonon interaction between theory and experiment. By taking the
nonlinear bare bandstructure into account, we are able to show that the
strength of the electron-phonon interaction does indeed agree with theoretical
calculations. In addition, we observe a significant bandgap at the Dirac point
of graphene.Comment: Submitted to Phys. Rev. Lett. on July 20, 201
Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)
Single-Dirac-cone topological insulators (TI) are the first experimentally
discovered class of three dimensional topologically ordered electronic systems,
and feature robust, massless spin-helical conducting surface states that appear
at any interface between a topological insulator and normal matter that lacks
the topological insulator ordering. This topologically defined surface
environment has been theoretically identified as a promising platform for
observing a wide range of new physical phenomena, and possesses ideal
properties for advanced electronics such as spin-polarized conductivity and
suppressed scattering. A key missing step in enabling these applications is to
understand how topologically ordered electrons respond to the interfaces and
surface structures that constitute a device. Here we explore this question by
using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO)
and control of bulk doping in BiSe from P-type to N-type charge
transport regimes to generate a range of topological insulator interface
scenarios that are fundamental to device development. The interplay of
conventional semiconductor junction physics and three dimensional topological
electronic order is observed to generate novel junction behaviors that go
beyond the doped-insulator paradigm of conventional semiconductor devices and
greatly alter the known spin-orbit interface phenomenon of Rashba splitting.
Our measurements for the first time reveal new classes of diode-like
configurations that can create a gap in the interface electron density near a
topological Dirac point and systematically modify the topological surface state
Dirac velocity, allowing far reaching control of spin-textured helical Dirac
electrons inside the interface and creating advantages for TI superconductors
as a Majorana fermion platform over spin-orbit semiconductors.Comment: 14 pages, 4 Figure
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
Observation of large non-saturating magnetoresistance in rare-earth
monopnictides has raised enormous interest in understanding the role of its
electronic structure. Here, by a combination of molecular-beam epitaxy,
low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid
density functional theory we have unveiled the bandstructure of LuSb, where
electron-hole compensation is identified as a mechanism responsible for large
magnetoresistance in this topologically trivial compound. In contrast to bulk
single crystal analogues, quasi-two-dimensional behavior is observed in our
thin films for both electron and holelike carriers, indicative of dimensional
confinement of the electronic states. Introduction of defects through growth
parameter tuning results in the appearance of quantum interference effects at
low temperatures, which has allowed us to identify the dominant inelastic
scattering processes and elucidate the role of spin-orbit coupling. Our
findings open up new possibilities of band structure engineering and control of
transport properties in rare-earth monopnictides via epitaxial synthesis.Comment: 20 pages, 12 figures; includes supplementary informatio
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