Structure of CdTe/ZnTe superlattices

The structure of CdTe/ZnTe superlattices has been analyzed through θ/2θ x‐ray diffraction, photoluminescence, and in situ reflection high‐energy electron diffraction (RHEED) measurements. Samples are found to break away from Cd_(x)Zn_(1−x)Te buffer layers as a consequence of the 6% lattice mismatch in this system. However, defect densities in these superlattices are seen to drop dramatically away from the buffer layer interface, accounting for the intense photoluminescence and high‐average strain fields seen in each of our samples. Observed variations in residual strains suggest that growth conditions play a role in forming misfit defects. This could explain discrepancies with calculated values of critical thickness based on models which neglect growth conditions. Photoluminescence spectra reveal that layer‐to‐layer growth proceeded with single monolayer uniformity, suggesting highly reproducible growth. Our results give hope for relatively defect‐free Cd_(x)Zn_(1−x)Te/Cd_(y)Zn_(1−y)Te superlattices with the potential for applications to optoelectronics offered by intense visible light emitters

Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions

Current-voltage behavior is studied experimentally in a Hg0.78Cd0.22Te-CdTe-Hg0.78Cd0.22Te heterostructure grown by molecular beam epitaxy. At temperatures above 160 K, energy-band diagrams suggest that the dominant low-bias current is thermionic hole emission across the CdTe barrier layer. This interpretation yields a direct determination of 390±75 meV for the HgTe-CdTe valence-band discontinuity at 300 K. Similar analyses of current-voltage data taken at 190–300 K suggest that the valence-band offset decreases at low temperatures in this heterojunction

Voltage controlled terahertz transmission through GaN quantum wells

We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas

A new MBE CdTe photoconductor array detector for X-ray applications

A CdTe photoconductor array x-ray detector was grown using Molecular Beam Epitaxially (MBE) on a Si (100) substrate. The temporal response of the photoconductor arrays is as fast as 21 psec risetime and 38 psec Full Width Half Maximum (FWHM). Spatial and energy responses were obtained using x-rays from a rotating anode and synchrotron radiation source. The spatial resolution of the photoconductor was good enough to provide 75 {micro}m FWHM using a 50 {micro}m synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors in particular for the new high brightness synchrotron sources

Toward sustainable organic semiconductors from a broad palette of green reactions

New conjugated materials, based on the triphenylamine-thiophene moiety and integrating azomethine bonds with a dibenzofuran unit or a cyanovinyl bond with a phenylthiophene or bithiophene unit, have been synthesized by using a wide range of green reactions such as direct heteroarylation coupling reactions, Knoevenagel and Schiff-base condensations and Stille cross-coupling reactions using ionic-liquid-supported thiophenylstannane. The electronic properties of the new molecules were analyzed by UV/Vis spectroscopy and cyclic voltammetry. The potential use of the molecules as donor materials for photovoltaic conversion were evaluated in simple bilayer solar cells using C60 as the acceptor material

Direct observation of threading dislocations in GaN by high-resolution Z-contrast imaging

Wide gap nitride semiconductors have attracted significant attention recently due to their promising performance as short-wavelength light emitting diodes (LEDs) and blue lasers. One interesting issue concerning GaN is that the material is relatively insensitive to the presence of a density of dislocations which is six orders of magnitude higher than that for III-V arsenide and phosphide based LEDs. Although it is well known that these dislocations originate at the film-substrate interface during film growth, thread through the whole epilayer with line direction along and are perfect dislocations with Burgers vectors of a, c, or c+a, the reason why they have such a small effect on the properties of GaN is unclear. To develop a fundamental understanding of the properties of these dislocations, the core structures are studied here by high resolution Z-contrast imaging in a 300kV VG HB603 scanning transmission electron microscope (STEM) with a resolution of 0.13 nm. As the Z-contrast image is a convolution between the probe intensity profile and the specimen object function, it is possible to obtain more detailed information on the specimen object function, i.e. the structure, through maximum entropy analysis (the maximum entropy technique produces the ``most likely`` object function which is consistent with the image)

Raman scattering determination of strain in CdTe/ZnTe superlattices

The strain configuration in CdTe/ZnTe strained-layer superlattices has been measured by Raman scattering near resonance. The ZnTe-like longitudinal optical phonon energy in the superlattice is significantly shifted from the bulk value to lower energies and the shift increases with increasing superlattice CdTe fraction. The observed shifts agree with calculations of strain shifts based on a free-standing strain distribution

Infrared absorption measurement and analysis of HgTe–CdTe superlattices

The near-band-gap optical properties of superlattice are essential in determining the usefulness of these structures for application in infrared systems. In this paper we report on studies of a HgTe–CdTe superlattice. The optical characterization of the superlattice in the infrared was carried out by measuring its photoluminescence, transmission, and photoconductivity spectra. Results of these measurements as functions of temperature are presented, as are the theoretically calculated absorption spectra. We obtained good agreement between different measurement techniques and the theoretical model for the optical absorption and band gap