Tuning the spectral distribution of p-i-n a-SiC : H devices for colour detection

ZnO:Al/p (SiC:H)/i (Si:H)/n (SiC:H) large area image and colour sensor are analysed. Carrier transport and collection efficiency are investigated from dark and illuminated current-voltage (I-V) dependence and spectral response measurements under different optical and electrical bias conditions. Results show that the carrier collection depends on the optical bias and on the applied voltage. By changing the electrical bias around the open circuit voltage it is possible to filter the absorption at a given wavelength and so to tune the spectral sensitivity of the device. Transport and optical modelling give insight into the internal physical process and explain the bias control of the spectral response and the image and colour sensing properties of the devices

Stacked pin devices for imaging applications

In this paper we present results on the optimization of device architectures for colour and imaging applications, using a device with a TCO/pinpi'n/TCO configuration. The effect of the applied voltage on the color selectivity is discussed. Results show that the spectral response curves demonstrate rather good separation between the red, green and blue basic colors. Combining the information obtained under positive and negative applied bias a colour image is acquired without colour filters or pixel architecture. A low level image processing algorithm is used for the colour image reconstruction

A non-pixel image reader for continuous image detection based on tandem heterostructures

An optically addressed read-write sensor based on two stacked p-i-n heterojunctions is analyzed. The device is a two terminal image sensing structure. The charge packets are injected optically into the p-i-n writer and confined at the illuminated regions changing locally the electrical field profile across the p-i-n reader. An optical scanner is used for charge readout. The design allows a continuous readout without the need for pixel-level patterning. The role of light pattern and scanner wavelengths on the readout parameters is analyzed. The optical-to-electrical transfer characteristics show high quantum efficiency, broad spectral response, and reciprocity between light and image signal. A numerical simulation supports the imaging process. A black and white image is acquired with a resolution around 20 mum showing the potentiality of these devices for imaging applications

metamaterials to the rescue

This research was supported by EU funds through the FEDER European Regional Development Fund (project LISBOA-02–0145-FEDER-031311 )and by Instituto Politécnico de Lisboa with projects IPL/2021/wavesensor_ISEL and IPL/2021/MuMIA2D . Publisher Copyright: © 2022 The AuthorsCoupling light into and/or out of a photonic integrated circuit is often accomplished by establishing a vertical link between a single-mode optical fiber and a resonant waveguide grating, which is then followed by a tapered and a single-mode waveguides. The tapered waveguide operates as a spot-size converter, laterally expanding or contracting the light beam between the single-mode waveguide and the resonant waveguide grating. In this work, we propose using subwavelength structures to achieve tapering functionalities. To this end, we designed a metamaterial structure that enables the modulation of the refractive index necessary to either expand or focus a beam of light. Furthermore, we simulated the metamaterial structure through adequate numerical methods and the expanding, and focusing performances were analyzed in terms of efficiency and mode profile matching. We achieved over 43 % and 48 % for the integral overlap with the transverse magnetic fundamental mode for the focusing and expanding configurations, respectively, out of 49 % and 51 % of power transferred.publishersversionpublishe

Comparative study of three-nucleon potentials in nuclear matter

A new generation of local three-body potentials providing an excellent description of the properties of light nuclei, as well as of the neutron-deuteron doublet scattering length, has been recently derived. We have performed a comparative analysis of the equations of state of both pure neutron matter and symmetric nuclear matter obtained using these models of three-nucleon forces. None of the considered potentials simultaneously explains the empirical equilibrium density and binding energy of symmetric nuclear matter. However, two of them provide reasonable values of the saturation density. The ambiguity concerning the treatment of the contact term of the chiral inspired potentials is discussed.Comment: 14 pages, 8 figure

a-SiH p-i-n structures with extreme i-layer thickness

We present measurements and numerical simulation of a-Si:H p-i-n detectors with a wide range of intrinsic layer thickness between 2 and 10 pm. Such a large active layer thickness is required in applications like elementary particle detectors or X-ray detectors. For large thickness and depending on the applied bias, we observe a sharp peak in the spectral response in the red region near 700 nm. Simulation results obtained with the program ASCA are in agreement with the measurement and permit the explanation of the experimental data. In thick samples holes recombine or are trapped before reaching the contacts, and the conduction mechanism is fully electron dominated. As a consequence, the peak position in the spectral response is located near the optical band gap of the a-Si:H i-layer. (C) 2009 Elsevier B.V. All rights reserved.http://ac.els-cdn.com/S0040609009003393/1-s2.0-S0040609009003393-main.pdf?_tid=1048124c-577b-11e3-bf9f-00000aab0f27&acdnat=1385567361_28bd7b0c0165dd29d894b963fd4cbd1

Detection of Change in Fluorescence Between Reactive Cyan and the Yellow Fluorophores Usinga-SiC:H Multilayer Transducers

Optical colour sensors based on multilayered a-SiC:H heterostructures can act as voltage controlled optical filters in the visible range. In this article we investigate the application of these structures for Fluorescence Resonance Energy Transfer (FRET) detection, The characteristics of a-SiC:H multilayered structure are studied both theoretically and experimentally in several wavelengths corresponding to different fluorophores. The tunable optical p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructures were produced by PECVD and tested for a proper fine tuning in the violet, cyan and yellow wavelengths. The devices were characterized through transmittance and spectral response measurements, under different electrical bias and frequencies. Violet, cyan and yellow signals were applied in simultaneous and results have shown that they can be recovered under suitable applied bias. A theoretical analysis supported by numerical simulation is presented