Развитие информационной системы лесного хозяйства в Венгрии

В последние десятилетия были сделаны значительные инвестиции в IТ в венгерском государственном лесном секторе. Инвестиции в IТ-инфраструктуру были необходимы, так как экономическое управление компаний требует своевременного получения срочной информации, использования цифровых соединений, а также является важным фактором в бизнесе. Информационно-техническая поддержка для планирования, управления и записи профессиональной деятельности стала обычным явлением чуть позже. С одной стороны, это можно объяснить тем фактом, что субъект управления обычно не требует быстрого действия или действия на ежедневной основе. С другой стороны, руководство различными фазами работы стало эффективным только тогда, когда появились геоинформационные системы (ГИС) и были разработаны совместимые профессиональные приложения. Автором рассмотрены шаги введения IТ-инструментов, IТ-решений и их последстви

Dynamic effects induced by renormalization in anisotropic pattern forming systems

The dynamics of patterns in large two-dimensional domains remains a challenge in non-equilibrium phenomena. Often it is addressed through mild extensions of one-dimensional equations. We show that full 2D generalizations of the latter can lead to unexpected dynamical behavior. As an example we consider the anisotropic Kuramoto-Sivashinsky equation, that is a generic model of anisotropic pattern forming systems and has been derived in different instances of thin film dynamics. A rotation of a ripple pattern by $90^{\circ}$ occurs in the system evolution when nonlinearities are strongly suppressed along one direction. This effect originates in non-linear parameter renormalization at different rates in the two system dimensions, showing a dynamical interplay between scale invariance and wavelength selection. Potential experimental realizations of this phenomenon are identified.Comment: 5 pages, 3 figures; supplemental material available at journal web page and/or on reques

Nanopatterning of Si surfaces by normal incident ion erosion: influence of metal incorporation on surface morphology evolution

The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patterns is observed only when the stationary Fe concentration in the surface is above 8x10^14 cm^-2. This is interpreted in terms of an additional surface instability due to non-uniform sputtering in connection with metal enrichment at the nanodots. At low metal concentration smoothing dominates and pattern formation is thus inhibited. The transition from a k^-2 to a k^-4 behavior in the asymptotic power spectral density function supports the conclusion that ballistic smoothing and ion-enhanced viscous flow are the two dominant mechanisms of surface relaxation.Comment: 10 pages, 4 figures, 1 tabl

Implanting germanium into graphene

Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties. Direct substitutions have thus far been limited to incidental Si impurities and P, N and B dopants introduced using low-energy ion implantation. We present here the heaviest impurity to date, namely $^{74}$Ge$^+$ ions implanted into monolayer graphene. Although sample contamination remains an issue, atomic resolution scanning transmission electron microscopy imaging and quantitative image simulations show that Ge can either directly substitute single atoms, bonding to three carbon neighbors in a buckled out-of-plane configuration, or occupy an in-plane position in a divacancy. First principles molecular dynamics provides further atomistic insight into the implantation process, revealing a strong chemical effect that enables implantation below the graphene displacement threshold energy. Our results show that heavy atoms can be implanted into the graphene lattice, pointing a way towards advanced applications such as single-atom catalysis with graphene as the template.Comment: 20 pages, 5 figure