6,181 research outputs found

    Depth Estimation via Affinity Learned with Convolutional Spatial Propagation Network

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    Depth estimation from a single image is a fundamental problem in computer vision. In this paper, we propose a simple yet effective convolutional spatial propagation network (CSPN) to learn the affinity matrix for depth prediction. Specifically, we adopt an efficient linear propagation model, where the propagation is performed with a manner of recurrent convolutional operation, and the affinity among neighboring pixels is learned through a deep convolutional neural network (CNN). We apply the designed CSPN to two depth estimation tasks given a single image: (1) To refine the depth output from state-of-the-art (SOTA) existing methods; and (2) to convert sparse depth samples to a dense depth map by embedding the depth samples within the propagation procedure. The second task is inspired by the availability of LIDARs that provides sparse but accurate depth measurements. We experimented the proposed CSPN over two popular benchmarks for depth estimation, i.e. NYU v2 and KITTI, where we show that our proposed approach improves in not only quality (e.g., 30% more reduction in depth error), but also speed (e.g., 2 to 5 times faster) than prior SOTA methods.Comment: 14 pages, 8 figures, ECCV 201

    Global behavior of cosmological dynamics with interacting Veneziano ghost

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    In this paper, we shall study the dynamical behavior of the universe accelerated by the so called Veneziano ghost dark energy component locally and globally by using the linearization and nullcline method developed in this paper. The energy density is generalized to be proportional to the Hawking temperature defined on the trapping horizon instead of Hubble horizon of the Friedmann-Robertson-Walker (FRW) universe. We also give a prediction of the fate of the universe and present the bifurcation phenomenon of the dynamical system of the universe. It seems that the universe could be dominated by dark energy at present in some region of the parameter space.Comment: 8 pages, 7 figures, accepted for publication in JHE

    Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination

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    A structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics.published_or_final_versio

    The Directed Dominating Set Problem: Generalized Leaf Removal and Belief Propagation

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    A minimum dominating set for a digraph (directed graph) is a smallest set of vertices such that each vertex either belongs to this set or has at least one parent vertex in this set. We solve this hard combinatorial optimization problem approximately by a local algorithm of generalized leaf removal and by a message-passing algorithm of belief propagation. These algorithms can construct near-optimal dominating sets or even exact minimum dominating sets for random digraphs and also for real-world digraph instances. We further develop a core percolation theory and a replica-symmetric spin glass theory for this problem. Our algorithmic and theoretical results may facilitate applications of dominating sets to various network problems involving directed interactions.Comment: 11 pages, 3 figures in EPS forma

    Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

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    In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE.published_or_final_versio

    Selective catalytic oxidation of ammonia over nano Cu/zeolites with different topologies

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    The selective catalytic oxidation of ammonia (NH3-SCO) is the last mitigation step in exhaust treatment using a 4-way catalytic converter to convert any excess and unreacted NH3 (that was used as a reductant of NOx) into environmentally benign N2 and H2O. Here, we report a series of highly reactive and selective nano Cu/zeolites for the NH3-SCO reaction. The NH3-SCO activity was found in the order nano Cu/ZSM-5 (MFI topology) > Cu/Beta (BEA) > Cu/MCM-49 (MWW) > Cu/Y (FAU) > Cu/Mordenite (MOR) > Cu/Ferrierite (FER). The best catalyst, i.e., nano Cu/ZSM-5, achieves 98% NH3 conversion at 250 °C with the N2 yield maintained at >98% even at up to 500 °C. When assessed under practical exhaust conditions in the presence of moisture (5% H2O) as well as that after hydrothermal aging (5% H2O, 850 °C, 8 h), the nano Cu/ZSM-5 exhibited only minor deactivation as a result of its good retention of Cu dispersion, pore structure and specific surface area. Furthermore, small micropore (10-membered ring, 10-MR) topologies were found to be crucial in maintaining high N2 yields. For Cu/Y and Cu/Mordenite, composed of 12-MR pores that are non-interconnected with smaller pores, their N2 yields were compromised by forming NOx at temperatures above 400 °C. Based on the in situ DRIFTS study, the iSCR mechanism appears to be applicable for all fresh and aged Cu/zeolites with the exception of fresh Cu/MCM-49 that follows the imide mechanism

    Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing

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    Influence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.published_or_final_versio

    Advanced Li₂S/Si Full Battery Enabled by TiN Polysulfide Immobilizer

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    Lithium sulfide (Li2S) is a promising cathode material with high capacity, which can be paired with nonlithium metal anodes such as silicon or tin so that the safety issues caused by the Li anode can be effectively avoided. However, the Li2S full cell suffers from rapid capacity degradation due to the dissolution of intermediate polysulfides. Herein, a Li2S/Si full cell is designed with a Li2S cathode incorporated by titanium nitride (TiN) polysulfide immobilizer within parallel hollow carbon (PHC). This full cell delivers a high initial reversible capacity of 702 mAh gLi2S−1 (1007 mAh gsulfur−1) at 0.5 C rate and excellent cyclability with only 0.4% capacity fade per cycle over 200 cycles. The long cycle stability is ascribed to the strong polysulfide anchor effect of TiN and highly efficient electron/ion transport within the interconnected web‐like architecture of PHC. Theoretical calculations, self‐discharge measurements, and anode stability experiments further confirm the strong adsorption of polysulfides on the TiN surface. The present work demonstrates that the flexible Li2S cathode and paired Si anode can be used to achieve highly efficient Li‐S full cells
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