Scientific CCD technology at JPL

Charge-coupled devices (CCD's) were recognized for their potential as an imaging technology almost immediately following their conception in 1970. Twenty years later, they are firmly established as the technology of choice for visible imaging. While consumer applications of CCD's, especially the emerging home video camera market, dominated manufacturing activity, the scientific market for CCD imagers has become significant. Activity of the Jet Propulsion Laboratory and its industrial partners in the area of CCD imagers for space scientific instruments is described. Requirements for scientific imagers are significantly different from those needed for home video cameras, and are described. An imager for an instrument on the CRAF/Cassini mission is described in detail to highlight achieved levels of performance

Active pixel sensors with substantially planarized color filtering elements

A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor

The amalgamated duplication of a ring along a multiplicative-canonical ideal

After recalling briefly the main properties of the amalgamated duplication of a ring $R$ along an ideal $I$, denoted by R\JoinI, we restrict our attention to the study of the properties of R\JoinI, when $I$ is a multiplicative canonical ideal of $R$ \cite{hhp}. In particular, we study when every regular fractional ideal of $R\Join I$ is divisorial

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node

Active pixel sensor array with multiresolution readout

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node

Digital Parallel Processor Array for Optimum Path Planning

The invention computes the optimum path across a terrain or topology represented by an array of parallel processor cells interconnected between neighboring cells by links extending along different directions to the neighboring cells. Such an array is preferably implemented as a high-speed integrated circuit. The computation of the optimum path is accomplished by, in each cell, receiving stimulus signals from neighboring cells along corresponding directions, determining and storing the identity of a direction along which the first stimulus signal is received, broadcasting a subsequent stimulus signal to the neighboring cells after a predetermined delay time, whereby stimulus signals propagate throughout the array from a starting one of the cells. After propagation of the stimulus signal throughout the array, a master processor traces back from a selected destination cell to the starting cell along an optimum path of the cells in accordance with the identity of the directions stored in each of the cells

Collisional dissipation of Alfvén waves in a partially ionised solar chromosphere

Certain regions of the solar atmosphere are at sufficiently low temperatures to be only partially ionised. The lower chromosphere contains neutral atoms, the existence of which greatly increases the efficiency of the damping of waves due to collisional friction momentum transfer. More specifically the Cowling conductivity can be up to 12 orders of magnitude smaller than the Spitzer value, so that the main damping mechanism in this region is due to the collisions between neutrals and positive ions (Khodachenko et al. 2004, A&A, 422, 1073). Using values for the gas density and temperature as functions of height taken from the VAL C model of the quiet Sun (Vernazza et al. 1981, ApJS, 45, 635), an estimate is made for the dependance of the Cowling conductivity on height and strength of magnetic field. Using both analytic and numerical approaches the passage of Alfvén waves over a wide spectrum through this partially ionised region is investigated. Estimates of the efficiency of this region in the damping of Alfvén waves are made and compared for both approaches. We find that Alfvén waves with frequencies above 0.6 Hz are completely damped and frequencies below 0.01 Hz unaffected