The effects of Zn Impurity on the Properties of Doped Cuprates in the Normal State

We study the interplay of quantum impurity, and collective spinon and holon dynamics in Zn doped high-T$_c$ cuprates in the normal state. The two-dimensional t-t$^{\prime}$-J models with one and a small amount of Zn impurity are investigated within a numerical method based on the double-time Green function theory. We study the inhomogeneities of holon density and antiferromagnetic correlation background in cases with different Zn concentrations, and obtain that doped holes tend to assemble around the Zn impurity with their mobility being reduced. Therefore a bound state of holon is formed around the nonmagnetic Zn impurity with the effect helping Zn to introduce local antiferromagnetism around itself. The incommensurate peaks we obtained in the spin structure factor indicate that Zn impurities have effects on mixing the q=($\pi$, $\pi$) and q=0 components in spin excitations.Comment: 5 pages, 3 figure

Children with 5′-end NF1 gene mutations are more likely to have glioma

Objective:To ascertain the relationship between the germline NF1 gene mutation and glioma development in patients with neurofibromatosis type 1 (NF1).Methods:The relationship between the type and location of the germline NF1 mutation and the presence of a glioma was analyzed in 37 participants with NF1 from one institution (Washington University School of Medicine [WUSM]) with a clinical diagnosis of NF1. Odds ratios (ORs) were calculated using both unadjusted and weighted analyses of this data set in combination with 4 previously published data sets.Results:While no statistical significance was observed between the location and type of the NF1 mutation and glioma in the WUSM cohort, power calculations revealed that a sample size of 307 participants would be required to determine the predictive value of the position or type of the NF1 gene mutation. Combining our data set with 4 previously published data sets (n = 310), children with glioma were found to be more likely to harbor 5′-end gene mutations (OR = 2; p = 0.006). Moreover, while not clinically predictive due to insufficient sensitivity and specificity, this association with glioma was stronger for participants with 5′-end truncating (OR = 2.32; p = 0.005) or 5′-end nonsense (OR = 3.93; p = 0.005) mutations relative to those without glioma.Conclusions:Individuals with NF1 and glioma are more likely to harbor nonsense mutations in the 5′ end of the NF1 gene, suggesting that the NF1 mutation may be one predictive factor for glioma in this at-risk population.</jats:sec

Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires

We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ~20 nm and lateral switching gaps as narrow as ~10 nm. Very low switch-on voltages are obtained, from a few volts down to ~1 V level. Two-terminal, contact-mode “hot” switching with high on/off ratios (>10^2 or 10^3) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs

Ka-band Ga-As FET noise receiver/device development

The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm

An integrable semi-discretization of the Camassa-Holm equation and its determinant solution

An integrable semi-discretization of the Camassa-Holm equation is presented. The keys of its construction are bilinear forms and determinant structure of solutions of the CH equation. Determinant formulas of $N$-soliton solutions of the continuous and semi-discrete Camassa-Holm equations are presented. Based on determinant formulas, we can generate multi-soliton, multi-cuspon and multi-soliton-cuspon solutions. Numerical computations using the integrable semi-discrete Camassa-Holm equation are performed. It is shown that the integrable semi-discrete Camassa-Holm equation gives very accurate numerical results even in the cases of cuspon-cuspon and soliton-cuspon interactions. The numerical computation for an initial value condition, which is not an exact solution, is also presented