7 research outputs found
Large Anomalous Hall effect in a silicon-based magnetic semiconductor
Magnetic semiconductors are attracting high interest because of their
potential use for spintronics, a new technology which merges electronics and
manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently
emerged as the most popular materials for this new technology. While Curie
temperatures are rising towards room temperature, these materials can only be
fabricated in thin film form, are heavily defective, and are not obviously
compatible with Si. We show here that it is productive to consider transition
metal monosilicides as potential alternatives. In particular, we report the
discovery that the bulk metallic magnets derived from doping the narrow gap
insulator FeSi with Co share the very high anomalous Hall conductance of
(GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens
up a new arena for spintronics, involving a bulk material based only on
transition metals and Si, and which we have proven to display a variety of
large magnetic field effects on easily measured electrical properties.Comment: 19 pages with 5 figure