A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the extreme quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic field. Bulk Bi$_{1-x}$Sb$_x$ single crystals are expected to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher dimensional analogues of the edge states that characterize a spin Hall insulator. In addition to its interesting boundary states, the bulk of Bi$_{1-x}$Sb$_x$ is predicted to exhibit three-dimensional Dirac particles, another topic of heightened current interest. Here, using incident-photon-energy-modulated (IPEM-ARPES), we report the first direct observation of massive Dirac particles in the bulk of Bi$_{0.9}$Sb$_{0.1}$, locate the Kramers' points at the sample's boundary and provide a comprehensive mapping of the topological Dirac insulator's gapless surface modes. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the much sought exotic "topological metal". They also suggest that this material has potential application in developing next-generation quantum computing devices.Comment: 16 pages, 3 Figures. Submitted to NATURE on 25th November(2007

The credibility of digital identity information on the social web: a user study

A theory of the dynamical conductance of mesoscopic conductors is presented. It is applied to mesoscopic capacitors, resonant double barriers, ballistic wires, metallic diffusive wires, and to the Corbino disk and the Hall bar in quantizing magnetic fields. Central to this approach is a discussion of the charge and potential distribution in mesoscopic conductors. It is necessary to take into account the implications of the long-range Coulomb interaction in order to obtain a charge and current conserving theory. We emphasize the low-frequency response. This has the advantage that the approach is of considerable generality. The theory can be used to discuss the self-consistency of the dc-conductance formula. The theory can also be applied to discuss the rectifying (nonlinear) behavior of mesoscopic conductors.Comment: 29 pages, figures not included (preprints with figures can be obtained by conventional mail on request from T.Christen [email protected]

Admittance and Nonlinear Transport in Quantum Wires, Point Contacts, and Resonant Tunneling Barriers

We present a discussion of the admittance (ac-conductance) and nonlinear I-V-characteristic for a number of mesoscopic conductors. Our approach is based on a generalization of the scattering approach which now includes the effects of the (long-range) Coulomb interaction. We discuss the admittance of a wire with an impurity and with a nearby gate. We extend a discussion of the low-frequency admittance of a quantum point contact to investigate the effects of the gates used to form the contact. We discuss the nonlinear I-V characteristic of a resonant double barrier structure and discuss the admittance for the double barrier for a large range of frequencies. Our approach emphasizes the overall conservation of charge (gauge invariance) and current conservation and the resulting sum rules for the admittance matrix and nonlinear transport coefficients