Electron surface scattering kernel for a plasma facing a semiconductor

Employing the invariant embedding principle for the electron backscattering function, we present a strategy for constructing an electron surface scattering kernel to be used in the boundary condition for the electron Boltzmann equation of a plasma facing a semiconducting solid. It takes the microphysics responsible for electron emission and backscattering from the interface into account. To illustrate the approach, we consider silicon and germanium, describing the interface potential by an image-step and impact ionization across the energy gap as well as scattering on phonons and ion cores by a randium-jellium model. The emission yields deduced from the kernel agree sufficiently well with measured data, despite the simplicity of the model, to support its use in the boundary condition of the plasma's electron Boltzmann equation.Comment: 14 pages, 10 figure

Exciton formation in strongly correlated electron-hole systems near the semimetal-semiconductor transition

The region surrounding the excitonic insulator phase is a three-component plasma composed of electrons, holes, and excitons. Due to the extended nature of the excitons, their presence influences the surrounding electrons and holes. We analyze this correlation. To this end, we calculate the density of bound electrons, the density of electrons in the correlated state, the momentum-resolved exciton density, and the momentum-resolved density of electron-hole pairs that are correlated but unbound. We find qualitative differences in the electron-hole correlations between the weak-coupling and the strong-coupling regime.Comment: 10 pages, 5 figure