3,014 research outputs found
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
The unique property of bilayer graphene to show a band gap tunable by
external electrical fields enables a variety of different device concepts with
novel functionalities for electronic, optoelectronic and sensor applications.
So far the operation of bilayer graphene based field effect transistors
requires two individual gates to vary the channel's conductance and to create a
band gap. In this paper we report on a method to increase the on/off ratio in
single gated bilayer graphene field effect transistors by adsorbate doping. The
adsorbate dopants on the upper side of the graphene establish a displacement
field perpendicular to the graphene surface breaking the inversion symmetry of
the two graphene layers. Low temperature measurements indicate, that the
increased on/off ratio is caused by the opening of a mobility gap. Beside field
effect transistors the presented approach can also be employed for other
bilayer graphene based devices like photodetectors for THz to infrared
radiation, chemical sensors and in more sophisticated structures such as
antidot- or superlattices where an artificial potential landscape has to be
created.Comment: 4 pages, 4 figure
Современное состояние и перспективы развития ООПТ Томской области
В работе дана характеристика сети особо охраняемых природных территорий Томской области, ее роли в поддержании эколого-хозяйственного баланса области. Определены этапы формирования сети ООПТ. Дан анализ географического разнообразия сети ООПТ и представленности ее в административных районах области. Определена роль сети ООПТ в сохранении редких и исчезающих видов растений и животных. Разработана и реализована методика комплексной оценки эффективности сети ООПТ. Предложены пути ее развития и оптимизации.In work the characteristic of the network of specially protected natural territories of the Tomsk region, its role in maintaining ecological and economic balance of the region. The stages of forming a network of protected areas. The analysis of the geographic diversity of the PA network and its representation in the administrative districts of the region. Defined the role of the network of protected areas in the conservation of rare and endangered species of plants and animals. Developed and implemented a methodology of comprehensive evaluation of the effectiveness of the PA network. The proposed ways of its development and optimization
Patterning graphene nanostripes in substrate-supported functionalized graphene: A promising route to integrated, robust, and superior transistors
It is promising to apply quantum-mechanically confined graphene systems in
field-effect transistors. High stability, superior performance, and large-scale
integration are the main challenges facing the practical application of
graphene transistors. Our understandings of the adatom-graphene interaction
combined with recent progress in the nanofabrication technology indicate that
very stable and high-quality graphene nanostripes could be integrated in
substrate-supported functionalized (hydrogenated or fluorinated) graphene using
electron-beam lithography. We also propose that parallelizing a couple of
graphene nanostripes in a transistor should be preferred for practical
application, which is also very useful for transistors based on graphene
nanoribbon.Comment: Frontiers of Physics (2012) to be publishe
Технологические решения для строительства эксплуатационной наклонно-направленной скважины глубиной 3673 метров на Арчинском нефтегазоконденсатном месторождении (Томская область)
Цель работы – технологические решения для строительства наклонно-направленной скважины глубиной 3673 метров на Арчинском нефтегазоконденсатном месторождении.
В процессе исследования в специальной части теоретически рассмотрели возможность качественного вскрытия продуктивных пластов на депрессии. В результате исследования Разработаны мероприятия по организации строительства, охране труда и окружающей среды.
Степень внедрения: на аналитическом уровне.Purpose – technological solutions for the construction of directional well with a depth of 3673 meters Archinskoye oil and gas condensate field. In the process of research in special parts theoretically considered the possibility of qualitative opening of productive layers on depression. The study Developed measures for the organization of construction, occupational safety and the environment.
Level of implementation: at the analytical level
Band gap opening by two-dimensional manifestation of Peierls instability in graphene
Using first-principles calculations of graphene having high-symmetry
distortion or defects, we investigate band gap opening by chiral symmetry
breaking, or intervalley mixing, in graphene and show an intuitive picture of
understanding the gap opening in terms of local bonding and antibonding
hybridizations. We identify that the gap opening by chiral symmetry breaking in
honeycomb lattices is an ideal two-dimensional (2D) extension of the Peierls
metal-insulator transition in 1D linear lattices. We show that the spontaneous
Kekule distortion, a 2D version of the Peierls distortion, takes place in
biaxially strained graphene, leading to structural failure. We also show that
the gap opening in graphene antidots and armchair nanoribbons, which has been
attributed usually to quantum confinement effects, can be understood with the
chiral symmetry breaking
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
The maximum oscillation frequency (fmax) quantifies the practical upper bound
for useful circuit operation. We report here an fmax of 70 GHz in transistors
using epitaxial graphene grown on the C-face of SiC. This is a significant
improvement over Si-face epitaxial graphene used in the prior high frequency
transistor studies, exemplifying the superior electronics potential of C-face
epitaxial graphene. Careful transistor design using a high {\kappa} dielectric
T-gate and self-aligned contacts, further contributed to the record-breaking
fmax
Group-IV graphene- and graphane-like nanosheets
We performed a first principles investigation on the structural and
electronic properties of group-IV (C, SiC, Si, Ge, and Sn) graphene-like sheets
in flat and buckled configurations and the respective hydrogenated or
fluorinated graphane-like ones. The analysis on the energetics, associated with
the formation of those structures, showed that fluorinated graphane-like sheets
are very stable, and should be easily synthesized in laboratory. We also
studied the changes on the properties of the graphene-like sheets, as result of
hydrogenation or fluorination. The interatomic distances in those graphane-like
sheets are consistent with the respective crystalline ones, a property that may
facilitate integration of those sheets within three-dimensional nanodevices
Effect of Layer-Stacking on the Electronic Structure of Graphene Nanoribbons
The evolution of electronic structure of graphene nanoribbons (GNRs) as a
function of the number of layers stacked together is investigated using
\textit{ab initio} density functional theory (DFT) including interlayer van der
Waals interactions. Multilayer armchair GNRs (AGNRs), similar to single-layer
AGNRs, exhibit three classes of band gaps depending on their width. In zigzag
GNRs (ZGNRs), the geometry relaxation resulting from interlayer interactions
plays a crucial role in determining the magnetic polarization and the band
structure. The antiferromagnetic (AF) interlayer coupling is more stable
compared to the ferromagnetic (FM) interlayer coupling. ZGNRs with the AF
in-layer and AF interlayer coupling have a finite band gap while ZGNRs with the
FM in-layer and AF interlayer coupling do not have a band gap. The ground state
of the bi-layer ZGNR is non-magnetic with a small but finite band gap. The
magnetic ordering is less stable in multilayer ZGNRs compared to single-layer
ZGNRs. The quasipartcle GW corrections are smaller for bilayer GNRs compared to
single-layer GNRs because of the reduced Coulomb effects in bilayer GNRs
compared to single-layer GNRs.Comment: 10 pages, 5 figure
Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
Graphene holds great promise for post-silicon electronics, however, it faces
two main challenges: opening up a bandgap and finding a suitable substrate
material. In principle, graphene on hexagonal boron nitride (hBN) substrate
provides potential system to overcome these challenges. Recent theoretical and
experimental studies have provided conflicting results: while theoretical
studies suggested a possibility of a finite bandgap of graphene on hBN, recent
experimental studies find no bandgap. Using the first-principles density
functional method and the many-body perturbation theory, we have studied
graphene on hBN substrate. A Bernal stacked graphene on hBN has a bandgap on
the order of 0.1 eV, which disappears when graphene is misaligned with respect
to hBN. The latter is the likely scenario in realistic devices. In contrast, if
graphene supported on hBN is hydrogenated, the resulting system (graphone)
exhibits bandgaps larger than 2.5 eV. While the bandgap opening in graphene/hBN
is due to symmetry breaking and is vulnerable to slight perturbation such as
misalignment, the graphone bandgap is due to chemical functionalization and is
robust in the presence of misalignment. The bandgap of graphone reduces by
about 1 eV when it is supported on hBN due to the polarization effects at the
graphone/hBN interface. The band offsets at graphone/hBN interface indicate
that hBN can be used not only as a substrate but also as a dielectric in the
field effect devices employing graphone as a channel material. Our study could
open up new way of bandgap engineering in graphene based nanostructures.Comment: 8 pages, 4 figures; Nano Letters, Publication Date (Web): Oct. 25
2011, http://pubs.acs.org/doi/abs/10.1021/nl202725
Application of Graphene within Optoelectronic Devices and Transistors
Scientists are always yearning for new and exciting ways to unlock graphene's
true potential. However, recent reports suggest this two-dimensional material
may harbor some unique properties, making it a viable candidate for use in
optoelectronic and semiconducting devices. Whereas on one hand, graphene is
highly transparent due to its atomic thickness, the material does exhibit a
strong interaction with photons. This has clear advantages over existing
materials used in photonic devices such as Indium-based compounds. Moreover,
the material can be used to 'trap' light and alter the incident wavelength,
forming the basis of the plasmonic devices. We also highlight upon graphene's
nonlinear optical response to an applied electric field, and the phenomenon of
saturable absorption. Within the context of logical devices, graphene has no
discernible band-gap. Therefore, generating one will be of utmost importance.
Amongst many others, some existing methods to open this band-gap include
chemical doping, deformation of the honeycomb structure, or the use of carbon
nanotubes (CNTs). We shall also discuss various designs of transistors,
including those which incorporate CNTs, and others which exploit the idea of
quantum tunneling. A key advantage of the CNT transistor is that ballistic
transport occurs throughout the CNT channel, with short channel effects being
minimized. We shall also discuss recent developments of the graphene tunneling
transistor, with emphasis being placed upon its operational mechanism. Finally,
we provide perspective for incorporating graphene within high frequency
devices, which do not require a pre-defined band-gap.Comment: Due to be published in "Current Topics in Applied Spectroscopy and
the Science of Nanomaterials" - Springer (Fall 2014). (17 pages, 19 figures
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