194 research outputs found
Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy
Co islands grown on Cu(111) with a stacking fault at the interface present a
conductance in the empty electronic states larger than the Co islands that
follow the stacking sequence of the Cu substrate. Electrons can be more easily
injected into these faulted interfaces, providing a way to enhance transmission
in future spintronic devices. The electronic states associated to the stacking
fault are visualized by tunneling spectroscopy and its origin is identified by
band structure calculations.Comment: 4 pages, 4 figures; to be published in Phys. Rev. Lett (2000
Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions
Epitaxial thin films of the theoretically predicted half metal
Co2Cr0.6Fe0.4Al were deposited by dc magnetron sputtering on different
substrates and buffer layers. The samples were characterized by x-ray and
electron beam diffraction (RHEED) demonstrating the B2 order of the Heusler
compound with only a small partition of disorder on the Co sites. Magnetic
tunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counter
electrode were prepared. From the Julliere model a spin polarisation of
Co2Cr0.6Fe0.4Al of 54% at T=4K is deduced. The relation between the annealing
temperature of the Heusler electrodes and the magnitude of the tunneling
magnetoresistance effect was investigated and the results are discussed in the
framework of morphology and surface order based of in situ STM and RHEED
investigations.Comment: accepted by J. Phys. D: Appl. Phy
Spin injection and spin accumulation in all-metal mesoscopic spin valves
We study the electrical injection and detection of spin accumulation in
lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin
valve devices with transparent interfaces. Different ferromagnetic metals,
permalloy (Py), cobalt (Co) and nickel (Ni), are used as electrical spin
injectors and detectors. For the nonmagnetic metal both aluminium (Al) and
copper (Cu) are used. Our multi-terminal geometry allows us to experimentally
separate the spin valve effect from other magneto resistance signals such as
the anomalous magneto resistance (AMR) and Hall effects. We find that the AMR
contribution of the ferromagnetic contacts can dominate the amplitude of the
spin valve effect, making it impossible to observe the spin valve effect in a
'conventional' measurement geometry. In a 'non local' spin valve measurement we
are able to completely isolate the spin valve signal and observe clear spin
accumulation signals at T=4.2 K as well as at room temperature (RT). For
aluminum we obtain spin relaxation lengths (lambda_{sf}) of 1.2 mu m and 600 nm
at T=4.2 K and RT respectively, whereas for copper we obtain 1.0 mu m and 350
nm. The spin relaxation times tau_{sf} in Al and Cu are compared with theory
and results obtained from giant magneto resistance (GMR), conduction electron
spin resonance (CESR), anti-weak localization and superconducting tunneling
experiments. The spin valve signals generated by the Py electrodes (alpha_F
lambda_F=0.5 [1.2] nm at RT [T=4.2 K]) are larger than the Co electrodes
(alpha_F lambda_F=0.3 [0.7] nm at RT [T=4.2 K]), whereas for Ni (alpha_F
lambda_F<0.3 nm at RT and T=4.2 K) no spin signal is observed. These values are
compared to the results obtained from GMR experiments.Comment: 16 pages, 12 figures, submitted to PR
Social physique anxiety and physical activity in early adolescent girls : the influence of maturation and physical activity motives
This study considered the influence of maturation on social physique anxiety (SPA), the relationship between SPA and current and future physical activity (PA) levels and the influence of motives for physical activity on this relationship in early adolescent girls (n=162; mean age=11.80±0.33 years). Participants completed the Pubertal Development Scale, the modified Social Physique Anxiety Scale and the Motives for Physical Activity Scale at baseline and the Physical Activity Questionnaire for Older Children at baseline and 6 months later. The girls became less active across the 6 months and girls in the early stages of maturation had significantly lower SPA than the girls in the middle and late stages of maturation. SPA was not related to current or future physical activity in the sample as a whole. Cluster analysis identified four groups with different motive profiles and the High Appearance and Fitness group demonstrated a moderate negative relationship between SPA and PA at phase 1, whereas the other groups did not. These findings indicate that SPA may increase with maturation and the relationship between SPA and PA is dependent on reasons for being active. For girls who are motivated to be active primarily by body-related reasons SPA is likely to lead to lower levels of PA
Quasiparticle dynamics in ferromagnetic compounds of the Co-Fe and Ni-Fe systems
We report a theoretical study of the quasiparticle lifetime and the
quasiparticle mean free path caused by inelastic electron-electron scattering
in ferromagnetic compounds of the Co-Fe and Ni-Fe systems. The study is based
on spin-polarized calculations, which are performed within the
approximation for equiatomic and Co- and Ni-rich compounds, as well as for
their constituents. We mainly focus on the spin asymmetry of the quasiparticle
properties, which leads to the spin-filtering effect experimentally observed in
spin-dependent transport of hot electrons and holes in the systems under study.
By comparing with available experimental data on the attenuation length, we
estimate the contribution of the inelastic mean free path to the latter.Comment: 10 pages, 10 figure
Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
Theory of electrical spin injection from a ferromagnetic (FM) metal into a
normal (N) conductor is presented. We show that tunnel contacts (T) can
dramatically increase spin injection and solve the problem of the mismatch in
the conductivities of a FM metal and a semiconductor microstructure. We also
present explicit expressions for the spin-valve resistance of FM-T-N- and
FM-T-N-T-FM-junctions with tunnel contacts at the interfaces and show that the
resistance includes both positive and negative contributions (Kapitza
resistance and injection conductivity, respectively).Comment: 4 pages, to appear in Phys. Rev. B (rapid communications
Spin-polarized current amplification and spin injection in magnetic bipolar transistors
The magnetic bipolar transistor (MBT) is a bipolar junction transistor with
an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or
collector. The low-injection theory of spin-polarized transport through MBTs
and of a more general case of an array of magnetic {\it p-n} junctions is
developed and illustrated on several important cases. Two main physical
phenomena are discussed: electrical spin injection and spin control of current
amplification (magnetoamplification). It is shown that a source spin can be
injected from the emitter to the collector. If the base of an MBT has an
equilibrium magnetization, the spin can be injected from the base to the
collector by intrinsic spin injection. The resulting spin accumulation in the
collector is proportional to , where is the proton
charge, is the bias in the emitter-base junction, and is the
thermal energy. To control the electrical current through MBTs both the
equilibrium and the nonequilibrium spin can be employed. The equilibrium spin
controls the magnitude of the equilibrium electron and hole densities, thereby
controlling the currents. Increasing the equilibrium spin polarization of the
base (emitter) increases (decreases) the current amplification. If there is a
nonequilibrium spin in the emitter, and the base or the emitter has an
equilibrium spin, a spin-valve effect can lead to a giant magnetoamplification
effect, where the current amplifications for the parallel and antiparallel
orientations of the the equilibrium and nonequilibrium spins differ
significantly. The theory is elucidated using qualitative analyses and is
illustrated on an MBT example with generic materials parameters.Comment: 14 PRB-style pages, 10 figure
Spin battery operated by ferromagnetic resonance
Precessing ferromagnets are predicted to inject a spin current into adjacent
conductors via Ohmic contacts, irrespective of a conductance mismatch with, for
example, doped semiconductors. This opens the way to create a pure spin source
spin battery by the ferromagnetic resonance. We estimate the spin current and
spin bias for different material combinations.Comment: The estimate for the magnitude of the spin bias is improved. We find
that it is feasible to get a measurable signal of the order of the microwave
frequency already for moderate rf intensitie
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio
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