An interdigital gate MOSFET for photodetection

Interdigital gate Si-MOSFET have been fabricated and electrically tested. Their photodetection performances are also evaluated and compared with straight gate ones

Limitations of the impulse response of GaAs MSM photoswitch

As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor-metal photoswitch fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswitch

Microwave optical switches metal-semiconductor-metal Schottky based on GaAs

Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor- metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photodetector MSM is introduced in the microwave lines have active surfaces of 3x3 μm2 and electrode spacing of 0.2, 0.3, 0.5 and 1 μm. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswich

Microwave Optical Switches Metal-Semiconductor-Metal Schottky based on GaAs

Abstract. Interdigitated metal-semiconductor-metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of interdigitated metal-semiconductor-metal photoswich fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photodetector MSM is introduced in the microwave lines have active surfaces of 3x3 µm2 and electrode spacing of 0.2, 0.3, 0.5 and 1 µm.. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswich

Theoretical study of a nonlinear fast silicon photoconductive switch

Silicon-On-Insulator waveguide can be used as photoconductor, the light being coupled in the silicon film by a diffraction grating. Nonlinear effects are induced by the photogeneration of electron-hole pairs. This leads to photocurrent variations which are much faster than in linear regime and also much steeper than the incident light pulse. A model is presented which takes into account the refractive index variations arising from both the excess carrier density and the temperature rise induced by carrier recombination and Joule effect. The photocurrent is calculated for various values of the incident light power, incidence angle and pulse duration

Anisotropy adjustment and thickness of thin layer doped by nanoparticles magnetic for the realization of phase matching between fundamental modes in monomode waveguides

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