74 research outputs found

    Electron surface scattering kernel for a plasma facing a semiconductor

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    Employing the invariant embedding principle for the electron backscattering function, we present a strategy for constructing an electron surface scattering kernel to be used in the boundary condition for the electron Boltzmann equation of a plasma facing a semiconducting solid. It takes the microphysics responsible for electron emission and backscattering from the interface into account. To illustrate the approach, we consider silicon and germanium, describing the interface potential by an image-step and impact ionization across the energy gap as well as scattering on phonons and ion cores by a randium-jellium model. The emission yields deduced from the kernel agree sufficiently well with measured data, despite the simplicity of the model, to support its use in the boundary condition of the plasma's electron Boltzmann equation.Comment: 14 pages, 10 figure

    About the quantum-kinetic derivation of boundary conditions for quasiparticle Boltzmann equations at interfaces

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    Quite a many electron transport problems in condensed matter physics are analyzed with a quasiparticle Boltzmann equation. For sufficiently slowly varying weak external potentials it can be derived from the basic equations of quantum kinetics, provided quasiparticles can be defined and lead to a pole in the quantum-mechanical propagators. The derivation breaks down, however, in the vicinity of an interface which constitutes an abrupt strong perturbation of the system. In this contribution we discuss in a tutorial manner a particular technique to systematically derive, for a planar, nonideal interface, matching conditions for the quasi-particle Boltzmann equation. The technique is based on pseudizing the transport problem by two auxiliary interface-free systems and matching Green functions at the interface. Provided quasiparticles exist in the auxiliary systems, the framework can be put onto the semiclassical level and the desired boundary conditions result. For ideal interfaces, the conditions can be guessed from flux conservation, but for complex interfaces this is no longer the case. The technique presented in this work is geared towards such interfaces.Comment: accepted version with corrected typos in Eqs. (6), (30), (32), and (40); 13 pages, 3 figure

    Exciton formation in strongly correlated electron-hole systems near the semimetal-semiconductor transition

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    The region surrounding the excitonic insulator phase is a three-component plasma composed of electrons, holes, and excitons. Due to the extended nature of the excitons, their presence influences the surrounding electrons and holes. We analyze this correlation. To this end, we calculate the density of bound electrons, the density of electrons in the correlated state, the momentum-resolved exciton density, and the momentum-resolved density of electron-hole pairs that are correlated but unbound. We find qualitative differences in the electron-hole correlations between the weak-coupling and the strong-coupling regime.Comment: 10 pages, 5 figure
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