Symmetry of standing waves generated by a point defect in epitaxial graphene

Using scanning tunneling microscopy (STM) and Fourier Transform STM (FT-STM), we have studied a point defect in an epitaxial graphene sample grown on silicon carbide substrate. This analysis allows us to extract the quasiparticle energy dispersion, and to give a first experimental proof of the validity of Fermi liquid theory in graphene for a wide range of energies from -800 meV to +800 meV. We also find evidence of a strong threefold anisotropy in the standing waves generated by the defect. We discuss possible relations between this anisotropy, the chirality of the electrons, and the asymmetry between graphene's two sublattices. All experimental measurements are compared and related to theoretical T-matrix calculations.Comment: 4 pages, 4 figure

High Van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by gold clusters intercalation

Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify the band structure of graphene around the Van Hove singularities (VHs) by a strong extension without charge transfer. This result gives a new insight on the role of the intercalant in the renormalization of the bare electronic band structure of graphene usually observed in Graphite and Graphene Intercalation Compounds

Fourier Transform Scanning Tunneling Spectroscopy: the possibility to obtain constant energy maps and the band dispersion using a local measurement

We present here an overview of the Fourier Transform Scanning Tunneling spectroscopy technique (FT-STS). This technique allows one to probe the electronic properties of a two-dimensional system by analyzing the standing waves formed in the vicinity of defects. We review both the experimental and theoretical aspects of this approach, basing our analysis on some of our previous results, as well as on other results described in the literature. We explain how the topology of the constant energy maps can be deduced from the FT of dI/dV map images which exhibit standing waves patterns. We show that not only the position of the features observed in the FT maps, but also their shape can be explained using different theoretical models of different levels of approximation. Thus, starting with the classical and well known expression of the Lindhard susceptibility which describes the screening of electron in a free electron gas, we show that from the momentum dependence of the susceptibility we can deduce the topology of the constant energy maps in a joint density of states approximation (JDOS). We describe how some of the specific features predicted by the JDOS are (or are not) observed experimentally in the FT maps. The role of the phase factors which are neglected in the rough JDOS approximation is described using the stationary phase conditions. We present also the technique of the T-matrix approximation, which takes into account accurately these phase factors. This technique has been successfully applied to normal metals, as well as to systems with more complicated constant energy contours. We present results recently obtained on graphene systems which demonstrate the power of this technique, and the usefulness of local measurements for determining the band structure, the map of the Fermi energy and the constant-energy maps.Comment: 33 pages, 15 figures; invited review article, to appear in Journal of Physics D: Applied Physic

Self-assembly in solution of a reversible comb-shaped supramolecular polymer

We report a single step synthesis of a polyisobutene with a bis-urea moiety in the middle of the chain. In low polarity solvents, this polymer self-assembles by hydrogen bonding to form a combshaped polymer with a central hydrogen bonded backbone and polyisobutene arms. The comb backbone can be reversibly broken, and consequently, its length can be tuned by changing the solvent, the concentration or the temperature. Moreover, we have proved that the bulkiness of the side-chains have a strong influence on both the self-assembly pattern and the length of the backbone. Finally, the density of arms can be reduced, by simply mixing with a low molar mass bis-urea

Solid-state reference electrodes based on carbon nanotubes and polyacrylate membranes

A novel potentiometric solid-state reference electrode containing single-walled carbon nanotubes as the transducer layer between a polyacrylate membrane and the conductor is reported here. Single-walled carbon nanotubes act as an efficient transducer of the constant potentiometric signal originating from the reference membrane containing the Ag/AgCl/Cl− ions system, and they are needed to obtain a stable reference potentiometric signal. Furthermore, we have taken advantage of the light insensitivity of single-walled carbon nanotubes to improve the analytical performance characteristics of previously reported solid-state reference electrodes. Four different polyacrylate polymers have been selected in order to identify the most efficient reservoir for the Ag/AgCl system. Finally, two different arrangements have been assessed: (1) a solid-state reference electrode using photo-polymerised n-butyl acrylate polymer and (2) a thermo-polymerised methyl methacrylate:n-butyl acrylate (1:10) polymer. The sensitivity to various salts, pH and light, as well as time of response and stability, has been tested: the best results were obtained using single-walled carbon nanotubes and photo-polymerised n-butyl acrylate polymer. Water transport plays an important role in the potentiometric performance of acrylate membranes, so a new screening test method has been developed to qualitatively assess the difference in water percolation between the polyacrylic membranes studied. The results presented here open the way for the true miniaturisation of potentiometric systems using the excellent properties of single-walled carbon nanotubes

Surface study of iridium buffer layers during the diamond bias enhanced nucleation in a HFCVD reactor

International audienceThe BEN nucleation of diamond on iridium substrates has been studied in a hot filament reactor. Without a prior BEN stage, no diamond nucleation could be detected. Nucleation is promoted only if a BEN step is applied before the CVD growth with nucleation densities up to 5 109 cm−2. The present study focuses on the early stages of BEN to better understand its specific role. In this way, samples have been in situ characterized using electron spectroscopies (XPS, AES, ELS) and further investigated by HR-SEM, AFM, Nano-Auger and Raman spectroscopy. A very different behaviour in the interface formation has been observed, as compared to silicon. First, a substrate roughening takes place during the cleaning step. Second, the formation of a graphite layer was systematically observed, with or without the BEN stage, in the early stages of CVD synthesis. Its crystallinity has been studied from the Raman experiments. The study of the XPS Ir 4f peaks supports a weak chemical bonding between graphite and iridium. Finally, after the BEN stage, spatially resolved Nano-Auger and Raman measurements revealed the presence of diamond nanocrystals

Consequences of line defects on the magnetic structure of high anisotropy films: Pinning centers on

The narrow domain wall width w of high-anisotropy materials induces significant pinning of magnetic domains at line defects which —due to spatial resolution limitations— could not be studied directly in the past. By means of spin-polarized scanning tunneling microscopy we have directly correlated the morphology and domain structure of ferromagnetic Dy/W(110) on the nanometer scale. Indeed, the images reveal an effective pinning of the domain walls by two types of line defects. They are identified by growth studies and atomic resolution STM as screw and edge dislocations, two fundamental lattice distortions in solid-state physics