199 research outputs found
Gamma radiation exposure of MCT diode arrays
Investigations of electrical properties of long-wavelength infrared (LWIR)
mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been
performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes
have been investigated using microprobe technique at T=78 K before and after an
exposure to various doses of gamma-radiation. The current transport mechanisms
for those structures are described within the framework of the balance equation
model taking into account the occupation of the trap states in the band gap.Comment: 11 pages, 4 figures, submitted to Semiconductor Science and
Technolog
IR region challenges: Photon or thermal detectors? Outlook and means
Infrared (IR) detectors play now an increasing role in different areas of human activity (e.g., security and military applications, tracking and targeting, environmental surveillance, fire and harvest control, communications, law enforcement, space surveillance of the Earth, medical diagnostics, etc.). Discussed in the paper are issues associated with the development and exploitation of up to date basic IR radiation detectors and arrays. Recent progress of basic for applications focal plane arrays (FPAs) that has rendered significant influence on infrared imaging is analyzed, and comparison of FPA detector performance characteristics is described with account of operational conditions and performance limits
High intensity study of THz detectors based on field effect transistors
Terahertz power dependence of the photoresponse of field effect transistors,
operating at frequencies from 0.1 to 3 THz for incident radiation power density
up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect
transistors and InGaAs high electron mobility transistors. The photoresponse
increased linearly with increasing radiation power up to kW/cm^2 range. The
saturation of the photoresponse was observed for all investigated field effect
transistors for intensities above several kW/cm^2. The observed signal
saturation is explained by drain photocurrent saturation similar to saturation
in direct currents output characteristics. The theoretical model of terahertz
field effect transistor photoresponse at high intensity was developed. The
model explains quantitatively experimental data both in linear and nonlinear
(saturation) range. Our results show that dynamic range of field effect
transistors is very high and can extend over more than six orderd of magnitudes
of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2)
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique
Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaFβ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed
Energy spectrum, density of states and optical transitions in strongly biased narrow-gap quantum wells
We study theoretically the effect of an electric field on the electron states
and far-infrared optical properties in narrow-gap lead salt quantum wells. The
electron states are described by a two-band Hamiltonian. An application of a
strong electric field across the well allows the control of the energy gap
between the two-dimensional (2D) states in a wide range. A sufficiently strong
electric field transforms the narrow-gap quantum well to a nearly gapless 2D
system, whose electron energy spectrum is described by linear dispersion
relations \epsilon_{\sigma} (k) ~\pm (k-k_{\sigma}), where k_{\sigma} are the
field-dependent 2D momenta corresponding to the minimum energy gaps for the
states with spin numbers \sigma. Due to the field-induced shift of the 2D
subband extrema away from k=0 the density of states has inverse-square-root
divergencies at the edges. This property may result in a considerable increase
of the magnitude of the optical absorption and in the efficiency of the
electrooptical effect.Comment: Text 18 pages in Latex/Revtex format, 7 Postscript figure
ΠΠ»ΡΡΠ΅Π²ΡΠ΅ Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΠΈΠ½Π½ΠΎΠ²Π°ΡΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΡΠΊΠΎΠ½ΠΎΠΌΠΈΠΊΠΈ Π ΠΎΡΡΠΈΠΈ Ρ ΡΡΠ΅ΡΠΎΠΌ ΠΎΠΏΡΡΠ° ΠΈΠ½Π½ΠΎΠ²Π°ΡΠΈΠΎΠ½Π½ΠΎΠΉ Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ ΠΈΠ½ΡΠ΅Π³ΡΠΈΡΠΎΠ²Π°Π½Π½ΡΡ ΠΊΠΎΡΠΏΠΎΡΠ°ΡΠΈΠ²Π½ΡΡ ΡΡΡΡΠΊΡΡΡ
ARTICLE RETRACTEDThe article deals with the problems and the key directions of The article deals with the problems and key directions of innovative development of the Russian industry in connection with the need to reduce the dependence of the national economy on the situation on world commodity markets, as well as to create the conditions and incentives for the introduction and modern technologies development, improving energy and environmental efficiency of the economy and productivity for the development of economic sectors and industries, producing goods with high added value for the implementation of innovative projects and in general - to upgrade the socio-economic system of the country.The following statement is given: the development of innovative high-tech and knowledge-intensive industries must ensure import substitution products at the first stage, primarily in the militaryindustrial complex, and in the future - export-oriented competitive product.The article analyzes the experience of innovative activity of the integrated corporate structures with the participation of the state in the following areas: the integration of the industrial and financial capital; the concentration of capital (through the merger and acquisition of enterprises, strategic alliances); diversification of forms and fields of activity; globalization of activities (creation of subsidiaries in the most attractive countries and working on promising markets); capital internationalization (through the creation of transnational companies).On the basis of generalization of global corporate management experience in the state corporations the article analyzes key conditions and factors that determine the efficiency of the state-owned companies as a whole: a clear statement of goals and objectives of the state as the owner, whose interests go beyond the usual business purposes; fixing of these goals and objectives in the regulations, in the concepts and programs of long-term socioeconomic development of the country, in special agreements between the government and public sector enterprises, as well as in the statutes, in the policy and budgetary documents of state corporations; the creation of state corporations administration system that allows to carry out the separation of the control and management functions, to ensure coherence and consistency of the implementation of the asset management policy, the uniformity of the rules of management of state property on the basis of common rules; harmonization of interests of the state and private investors, their documentary fixation (for corporate plans, agreements between the parties, etc.) in order to limit undue state interference in the activities of state-owned companies, on the one hand, and protection from lobbying strain - on the other hand; increasing business transparency, which is the foundation of good governance; the establishment of effective operational management systems, including goal setting and planning, reporting, monitoring, control and evaluation of companies, risk management and information disclosure.Π‘Π’ΠΠ’Π¬Π― ΠΠ’ΠΠΠΠΠΠΒ Π ΡΡΠ°ΡΡΠ΅ ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°ΡΡΡΡ ΠΏΡΠΎΠ±Π»Π΅ΠΌΡ ΠΈ ΠΊΠ»ΡΡΠ΅Π²ΡΠ΅ Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΠΈΠ½Π½ΠΎΠ²Π°ΡΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΡΡΠΈ Π ΠΎΡΡΠΈΠΈ Π² ΡΠ²ΡΠ·ΠΈ Ρ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎΡΡΡΡ ΡΠΌΠ΅Π½ΡΡΠ΅Π½ΠΈΡ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ Π½Π°ΡΠΈΠΎΠ½Π°Π»ΡΠ½ΠΎΠΉ ΡΠΊΠΎΠ½ΠΎΠΌΠΈΠΊΠΈ ΠΎΡ ΡΠΈΡΡΠ°ΡΠΈΠΈ Π½Π° ΠΌΠΈΡΠΎΠ²ΡΡ
ΡΡΠ½ΠΊΠ°Ρ
ΡΡΡΡΡ, Π° ΡΠ°ΠΊΠΆΠ΅ Π² ΡΠ΅Π»ΡΡ
ΡΠΎΠ·Π΄Π°Π½ΠΈΡ ΡΡΠ»ΠΎΠ²ΠΈΠΉ ΠΈ ΡΡΠΈΠΌΡΠ»ΠΎΠ² Π΄Π»Ρ Π²Π½Π΅Π΄ΡΠ΅Π½ΠΈΡ ΠΈ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ, ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ ΡΠ½Π΅ΡΠ³Π΅ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΈ ΡΠΊΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΡΠΊΠΎΠ½ΠΎΠΌΠΈΠΊΠΈ ΠΈ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΠΈΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ ΡΡΡΠ΄Π°, Π΄Π»Ρ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΠΎΡΡΠ°ΡΠ»Π΅ΠΉ ΡΠΊΠΎΠ½ΠΎΠΌΠΈΠΊΠΈ ΠΈ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ², Π²ΡΠΏΡΡΠΊΠ°ΡΡΠΈΡ
ΠΏΡΠΎΠ΄ΡΠΊΡΠΈΡ Ρ Π²ΡΡΠΎΠΊΠΎΠΉ Π΄ΠΎΠ»Π΅ΠΉ Π΄ΠΎΠ±Π°Π²Π»Π΅Π½Π½ΠΎΠΉ ΡΡΠΎΠΈΠΌΠΎΡΡΠΈ, Π΄Π»Ρ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΈΠ½Π½ΠΎΠ²Π°ΡΠΈΠΎΠ½Π½ΡΡ
ΠΏΡΠΎΠ΅ΠΊΡΠΎΠ² ΠΈ Π² ΡΠ΅Π»ΠΎΠΌ β Π΄Π»Ρ ΠΌΠΎΠ΄Π΅ΡΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΡΠΎΡΠΈΠ°Π»ΡΠ½ΠΎ-ΡΠΊΠΎΠ½ΠΎΠΌΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠΈΡΡΠ΅ΠΌΡ ΡΡΡΠ°Π½Ρ. ΠΡΠ΄Π²ΠΈΠ³Π°Π΅ΡΡΡ ΠΈ ΠΎΠ±ΠΎΡΠ½ΠΎΠ²ΡΠ²Π°Π΅ΡΡΡ ΠΏΠΎΠ»ΠΎΠΆΠ΅Π½ΠΈΠ΅ ΠΎ ΡΠΎΠΌ, ΡΡΠΎ ΠΈΠ½Π½ΠΎΠ²Π°ΡΠΈΠΎΠ½Π½ΠΎΠ΅ ΡΠ°Π·Π²ΠΈΡΠΈΠ΅ Π²ΡΡΠΎΠΊΠΎΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ½ΡΡ
ΠΈ Π½Π°ΡΠΊΠΎΠ΅ΠΌΠΊΠΈΡ
ΠΎΡΡΠ°ΡΠ»Π΅ΠΉ ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΡΡΠΈ Π΄ΠΎΠ»ΠΆΠ½ΠΎ ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΡΡ Π½Π° ΠΏΠ΅ΡΠ²ΠΎΠΌ ΡΡΠ°ΠΏΠ΅ ΠΈΠΌΠΏΠΎΡΡΠΎΠ·Π°ΠΌΠ΅ΡΠ΅Π½ΠΈΠ΅ ΠΏΡΠΎΠ΄ΡΠΊΡΠΈΠΈ, Π² ΠΏΠ΅ΡΠ²ΡΡ ΠΎΡΠ΅ΡΠ΅Π΄Ρ, Π² ΠΎΠ±ΠΎΡΠΎΠ½Π½ΠΎ-ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΠΌ ΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ΅, Π° Π² Π΄Π°Π»ΡΠ½Π΅ΠΉΡΠ΅ΠΌ β ΡΠΊΡΠΏΠΎΡΡΠ½ΡΡ ΠΎΡΠΈΠ΅Π½ΡΠ°ΡΠΈΡ ΠΊΠΎΠ½ΠΊΡΡΠ΅Π½ΡΠΎΡΠΏΠΎΡΠΎΠ±Π½ΠΎΠΉ ΠΏΡΠΎΠ΄ΡΠΊΡΠΈΠΈ. Π ΡΡΠ°ΡΡΠ΅ ΡΠΎΠ΄Π΅ΡΠΆΠΈΡΡΡ Π°Π½Π°Π»ΠΈΠ· ΠΎΠΏΡΡΠ° ΠΈΠ½Π½ΠΎΠ²Π°ΡΠΈΠΎΠ½Π½ΠΎΠΉ Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ ΠΈΠ½ΡΠ΅Π³ΡΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
ΠΊΠΎΡΠΏΠΎΡΠ°ΡΠΈΠ²Π½ΡΡ
ΡΡΡΡΠΊΡΡΡ Ρ ΡΡΠ°ΡΡΠΈΠ΅ΠΌ Π³ΠΎΡΡΠ΄Π°ΡΡΡΠ²Π° ΠΏΠΎ ΡΠ»Π΅Π΄ΡΡΡΠΈΠΌ ΠΎΡΠ½ΠΎΠ²Π½ΡΠΌ Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡΠΌ: ΠΈΠ½ΡΠ΅Π³ΡΠ°ΡΠΈΡ ΠΏΡΠΎΠΌΡΡΠ»Π΅Π½Π½ΠΎΠ³ΠΎ ΠΈ ΡΠΈΠ½Π°Π½ΡΠΎΠ²ΠΎΠ³ΠΎ ΠΊΠ°ΠΏΠΈΡΠ°Π»Π°; ΠΊΠΎΠ½ΡΠ΅Π½ΡΡΠ°ΡΠΈΡ ΠΊΠ°ΠΏΠΈΡΠ°Π»Π° (ΡΠ΅ΡΠ΅Π· ΡΠ»ΠΈΡΠ½ΠΈΠ΅ ΠΈ ΠΏΠΎΠ³Π»ΠΎΡΠ΅Π½ΠΈΠ΅ ΠΏΡΠ΅Π΄ΠΏΡΠΈΡΡΠΈΠΉ, ΡΠΎΠ·Π΄Π°Π½ΠΈΠ΅ ΡΡΡΠ°ΡΠ΅Π³ΠΈΡΠ΅ΡΠΊΠΈΡ
Π°Π»ΡΡΠ½ΡΠΎΠ²); Π΄ΠΈΠ²Π΅ΡΡΠΈΡΠΈΠΊΠ°ΡΠΈΡ ΡΠΎΡΠΌ ΠΈ ΡΡΠ΅Ρ Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ; Π³Π»ΠΎΠ±Π°Π»ΠΈΠ·Π°ΡΠΈΡ Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ (ΡΠΎΠ·Π΄Π°Π½ΠΈΠ΅ Π΄ΠΎΡΠ΅ΡΠ½ΠΈΡ
ΠΏΡΠ΅Π΄ΠΏΡΠΈΡΡΠΈΠΉ Π² Π½Π°ΠΈΠ±ΠΎΠ»Π΅Π΅ ΠΏΡΠΈΠ²Π»Π΅ΠΊΠ°ΡΠ΅Π»ΡΠ½ΡΡ
ΡΡΡΠ°Π½Π°Ρ
ΠΈ ΡΠ°Π±ΠΎΡΠ°ΡΡΠΈΡ
Π½Π° ΠΏΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Π½ΡΡ
ΡΡΠ½ΠΊΠ°Ρ
); ΠΈΠ½ΡΠ΅ΡΠ½Π°ΡΠΈΠΎΠ½Π°Π»ΠΈΠ·Π°ΡΠΈΡ ΠΊΠ°ΠΏΠΈΡΠ°Π»Π° (ΡΠ΅ΡΠ΅Π· ΡΠΎΠ·Π΄Π°Π½ΠΈΠ΅ ΡΡΠ°Π½ΡΠ½Π°ΡΠΈΠΎΠ½Π°Π»ΡΠ½ΡΡ
ΠΊΠΎΠΌΠΏΠ°Π½ΠΈΠΉ). ΠΠ° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΎΠ±ΠΎΠ±ΡΠ΅Π½ΠΈΡ ΠΌΠΈΡΠΎΠ²ΠΎΠ³ΠΎ ΠΎΠΏΡΡΠ° ΠΊΠΎΡΠΏΠΎΡΠ°ΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ Π² Π³ΠΎΡΡΠ΄Π°ΡΡΡΠ²Π΅Π½Π½ΡΡ
ΠΊΠΎΡΠΏΠΎΡΠ°ΡΠΈΡΡ
Π² ΡΡΠ°ΡΡΠ΅ ΡΠΎΡΠΌΡΠ»ΠΈΡΡΡΡΡΡ ΠΊΠ»ΡΡΠ΅Π²ΡΠ΅ ΡΡΠ»ΠΎΠ²ΠΈΡ ΠΈ ΡΠ°ΠΊΡΠΎΡΡ, ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΡΡΠΈΠ΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΡΡΠ½ΠΊΡΠΈΠΎΠ½ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π³ΠΎΡΠΊΠΎΠΌΠΏΠ°Π½ΠΈΠΉ Π² ΡΠ΅Π»ΠΎΠΌ: ΡΠ΅ΡΠΊΠ°Ρ ΡΠΎΡΠΌΡΠ»ΠΈΡΠΎΠ²ΠΊΠ° ΡΠ΅Π»Π΅ΠΉ ΠΈ Π·Π°Π΄Π°Ρ Π³ΠΎΡΡΠ΄Π°ΡΡΡΠ²Π° ΠΊΠ°ΠΊ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΠΈΠΊΠ°, ΠΈΠ½ΡΠ΅ΡΠ΅ΡΡ ΠΊΠΎΡΠΎΡΠΎΠ³ΠΎ Π²ΡΡ
ΠΎΠ΄ΡΡ Π·Π° ΡΠ°ΠΌΠΊΠΈ ΠΎΠ±ΡΡΠ½ΡΡ
ΡΠ΅Π»Π΅ΠΉ ΠΊΠΎΠΌΠΌΠ΅ΡΡΠ΅ΡΠΊΠΎΠΉ Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ; ΡΠΈΠΊΡΠ°ΡΠΈΡ ΡΡΠΈΡ
ΡΠ΅Π»Π΅ΠΉ ΠΈ Π·Π°Π΄Π°Ρ Π² Π½ΠΎΡΠΌΠ°ΡΠΈΠ²Π½ΡΡ
Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΠ°Ρ
, Π² ΠΊΠΎΠ½ΡΠ΅ΠΏΡΠΈΡΡ
ΠΈ ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ°Ρ
Π΄ΠΎΠ»Π³ΠΎΡΡΠΎΡΠ½ΠΎΠ³ΠΎ ΡΠΎΡΠΈΠ°Π»ΡΠ½ΠΎ-ΡΠΊΠΎΠ½ΠΎΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΡΡΡΠ°Π½Ρ, Π² ΡΠΏΠ΅ΡΠΈΠ°Π»ΡΠ½ΡΡ
ΡΠΎΠ³Π»Π°ΡΠ΅Π½ΠΈΡΡ
ΠΌΠ΅ΠΆΠ΄Ρ Π³ΠΎΡΡΠ΄Π°ΡΡΡΠ²ΠΎΠΌ ΠΈ ΠΏΡΠ΅Π΄ΠΏΡΠΈΡΡΠΈΡΠΌΠΈ Π³ΠΎΡΡΠ΅ΠΊΡΠΎΡΠ°, Π° ΡΠ°ΠΊΠΆΠ΅ Π² ΡΡΡΠ°Π²Π½ΡΡ
Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΠ°Ρ
, Π² ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ½ΡΡ
ΠΈ Π±ΡΠ΄ΠΆΠ΅ΡΠ½ΡΡ
ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ°Ρ
ΡΠ°ΠΌΠΈΡ
Π³ΠΎΡΠΊΠΎΡΠΏΠΎΡΠ°ΡΠΈΠΉ; ΡΠΎΠ·Π΄Π°Π½ΠΈΠ΅ ΡΠΈΡΡΠ΅ΠΌΡ Π°Π΄ΠΌΠΈΠ½ΠΈΡΡΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π³ΠΎΡΠΊΠΎΡΠΏΠΎΡΠ°ΡΠΈΠΉ, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡΠ΅ΠΉ ΠΎΡΡΡΠ΅ΡΡΠ²ΠΈΡΡ ΡΠ°Π·Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΠΊΠΎΠ½ΡΡΠΎΠ»ΡΠ½ΡΡ
ΡΡΠ½ΠΊΡΠΈΠΉ ΠΈ ΡΡΠ½ΠΊΡΠΈΠΉ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΠΉ, ΠΎΠ±Π΅ΡΠΏΠ΅ΡΠΈΡΡ ΡΠΎΠ³Π»Π°ΡΠΎΠ²Π°Π½Π½ΠΎΡΡΡ ΠΈ ΠΏΠΎΡΠ»Π΅Π΄ΠΎΠ²Π°ΡΠ΅Π»ΡΠ½ΠΎΡΡΡ ΡΠ΅Π°Π»ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠΎΠ»ΠΈΡΠΈΠΊΠΈ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΠΈΠΌΡΡΠ΅ΡΡΠ²ΠΎΠΌ, Π΅Π΄ΠΈΠ½ΠΎΠΎΠ±ΡΠ°Π·ΠΈΠ΅ ΠΏΡΠ°Π²ΠΈΠ» ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ Π³ΠΎΡΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΠΎΡΡΡΡ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ Π΅Π΄ΠΈΠ½ΠΎΠ³ΠΎ ΡΠ΅Π³Π»Π°ΠΌΠ΅Π½ΡΠ°; ΡΠΎΠ³Π»Π°ΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΈΠ½ΡΠ΅ΡΠ΅ΡΠΎΠ² Π³ΠΎΡΡΠ΄Π°ΡΡΡΠ²Π° ΠΈ ΡΠ°ΡΡΠ½ΡΡ
ΠΈΠ½Π²Π΅ΡΡΠΎΡΠΎΠ², ΠΈΡ
Π΄ΠΎΠΊΡΠΌΠ΅Π½ΡΠ°Π»ΡΠ½Π°Ρ ΡΠΈΠΊΡΠ°ΡΠΈΡ (Π² ΠΊΠΎΡΠΏΠΎΡΠ°ΡΠΈΠ²Π½ΡΡ
ΠΏΠ»Π°Π½Π°Ρ
, Π² Π΄ΠΎΠ³ΠΎΠ²ΠΎΡΠ°Ρ
ΠΌΠ΅ΠΆΠ΄Ρ ΡΡΠΈΠΌΠΈ ΡΡΠΎΡΠΎΠ½Π°ΠΌΠΈ ΠΈ Ρ.Π΄.) Ρ ΡΠ΅Π»ΡΡ ΠΎΠ³ΡΠ°Π½ΠΈΡΠ΅Π½ΠΈΡ Π½Π΅ΠΎΠΏΡΠ°Π²Π΄Π°Π½Π½ΠΎΠ³ΠΎ Π²ΠΌΠ΅ΡΠ°ΡΠ΅Π»ΡΡΡΠ²Π° Π³ΠΎΡΡΠ΄Π°ΡΡΡΠ²Π° Π² Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΡ Π³ΠΎΡΠΊΠΎΠΌΠΏΠ°Π½ΠΈΠΉ, Ρ ΠΎΠ΄Π½ΠΎΠΉ ΡΡΠΎΡΠΎΠ½Ρ, ΠΈ Π·Π°ΡΠΈΡΡ ΠΎΡ Π»ΠΎΠ±Π±ΠΈΡΡΡΠΊΠΈΡ
Π΄Π΅ΡΠΎΡΠΌΠ°ΡΠΈΠΉ β Ρ Π΄ΡΡΠ³ΠΎΠΉ; ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΠ΅ ΠΏΡΠΎΠ·ΡΠ°ΡΠ½ΠΎΡΡΠΈ Π±ΠΈΠ·Π½Π΅ΡΠ°, ΡΡΠΎ ΡΠ²Π»ΡΠ΅ΡΡΡ ΠΎΡΠ½ΠΎΠ²ΠΎΠΉ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ; ΡΠΎΠ·Π΄Π°Π½ΠΈΠ΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΡΡ
ΡΠΈΡΡΠ΅ΠΌ ΠΎΠΏΠ΅ΡΠ°ΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ, Π² ΡΠΎΠΌ ΡΠΈΡΠ»Π΅ ΡΠΈΡΡΠ΅ΠΌΡ ΡΠ΅Π»Π΅ΠΏΠΎΠ»Π°Π³Π°Π½ΠΈΡ ΠΈ ΠΏΠ»Π°Π½ΠΈΡΠΎΠ²Π°Π½ΠΈΡ, ΠΎΡΡΠ΅ΡΠ½ΠΎΡΡΠΈ, ΠΌΠΎΠ½ΠΈΡΠΎΡΠΈΠ½Π³Π°, ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΈ ΠΎΡΠ΅Π½ΠΊΠΈ Π΄Π΅ΡΡΠ΅Π»ΡΠ½ΠΎΡΡΠΈ ΠΏΡΠ΅Π΄ΠΏΡΠΈΡΡΠΈΠΉ, ΡΠΈΡΡΠ΅ΠΌΡ ΡΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ ΡΠΈΡΠΊΠ°ΠΌΠΈ ΠΈ ΡΠ°ΡΠΊΡΡΡΠΈΡ ΠΈΠ½ΡΠΎΡΠΌΠ°ΡΠΈΠΈ
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
Abstract. Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~
- β¦