199 research outputs found

    Gamma radiation exposure of MCT diode arrays

    Full text link
    Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.Comment: 11 pages, 4 figures, submitted to Semiconductor Science and Technolog

    IR region challenges: Photon or thermal detectors? Outlook and means

    No full text
    Infrared (IR) detectors play now an increasing role in different areas of human activity (e.g., security and military applications, tracking and targeting, environmental surveillance, fire and harvest control, communications, law enforcement, space surveillance of the Earth, medical diagnostics, etc.). Discussed in the paper are issues associated with the development and exploitation of up to date basic IR radiation detectors and arrays. Recent progress of basic for applications focal plane arrays (FPAs) that has rendered significant influence on infrared imaging is analyzed, and comparison of FPA detector performance characteristics is described with account of operational conditions and performance limits

    High intensity study of THz detectors based on field effect transistors

    Full text link
    Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2)

    Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

    No full text
    Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaFβ‚‚ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed

    Energy spectrum, density of states and optical transitions in strongly biased narrow-gap quantum wells

    Full text link
    We study theoretically the effect of an electric field on the electron states and far-infrared optical properties in narrow-gap lead salt quantum wells. The electron states are described by a two-band Hamiltonian. An application of a strong electric field across the well allows the control of the energy gap between the two-dimensional (2D) states in a wide range. A sufficiently strong electric field transforms the narrow-gap quantum well to a nearly gapless 2D system, whose electron energy spectrum is described by linear dispersion relations \epsilon_{\sigma} (k) ~\pm (k-k_{\sigma}), where k_{\sigma} are the field-dependent 2D momenta corresponding to the minimum energy gaps for the states with spin numbers \sigma. Due to the field-induced shift of the 2D subband extrema away from k=0 the density of states has inverse-square-root divergencies at the edges. This property may result in a considerable increase of the magnitude of the optical absorption and in the efficiency of the electrooptical effect.Comment: Text 18 pages in Latex/Revtex format, 7 Postscript figure

    ΠšΠ»ΡŽΡ‡Π΅Π²Ρ‹Π΅ направлСния ΠΈΠ½Π½ΠΎΠ²Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ развития экономики России с ΡƒΡ‡Π΅Ρ‚ΠΎΠΌ ΠΎΠΏΡ‹Ρ‚Π° ΠΈΠ½Π½ΠΎΠ²Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠΉ Π΄Π΅ΡΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ ΠΈΠ½Ρ‚Π΅Π³Ρ€ΠΈΡ€ΠΎΠ²Π°Π½Π½Ρ‹Ρ… ΠΊΠΎΡ€ΠΏΠΎΡ€Π°Ρ‚ΠΈΠ²Π½Ρ‹Ρ… структур

    Get PDF
    ARTICLE RETRACTEDThe article deals with the problems and the key directions of The article deals with the problems and key directions of innovative development of the Russian industry in connection with the need to reduce the dependence of the national economy on the situation on world commodity markets, as well as to create the conditions and incentives for the introduction and modern technologies development, improving energy and environmental efficiency of the economy and productivity for the development of economic sectors and industries, producing goods with high added value for the implementation of innovative projects and in general - to upgrade the socio-economic system of the country.The following statement is given: the development of innovative high-tech and knowledge-intensive industries must ensure import substitution products at the first stage, primarily in the militaryindustrial complex, and in the future - export-oriented competitive product.The article analyzes the experience of innovative activity of the integrated corporate structures with the participation of the state in the following areas: the integration of the industrial and financial capital; the concentration of capital (through the merger and acquisition of enterprises, strategic alliances); diversification of forms and fields of activity; globalization of activities (creation of subsidiaries in the most attractive countries and working on promising markets); capital internationalization (through the creation of transnational companies).On the basis of generalization of global corporate management experience in the state corporations the article analyzes key conditions and factors that determine the efficiency of the state-owned companies as a whole: a clear statement of goals and objectives of the state as the owner, whose interests go beyond the usual business purposes; fixing of these goals and objectives in the regulations, in the concepts and programs of long-term socioeconomic development of the country, in special agreements between the government and public sector enterprises, as well as in the statutes, in the policy and budgetary documents of state corporations; the creation of state corporations administration system that allows to carry out the separation of the control and management functions, to ensure coherence and consistency of the implementation of the asset management policy, the uniformity of the rules of management of state property on the basis of common rules; harmonization of interests of the state and private investors, their documentary fixation (for corporate plans, agreements between the parties, etc.) in order to limit undue state interference in the activities of state-owned companies, on the one hand, and protection from lobbying strain - on the other hand; increasing business transparency, which is the foundation of good governance; the establishment of effective operational management systems, including goal setting and planning, reporting, monitoring, control and evaluation of companies, risk management and information disclosure.БВАВЬЯ ΠžΠ’ΠžΠ—Π’ΠΠΠΒ Π’ ΡΡ‚Π°Ρ‚ΡŒΠ΅ Ρ€Π°ΡΡΠΌΠ°Ρ‚Ρ€ΠΈΠ²Π°ΡŽΡ‚ΡΡ ΠΏΡ€ΠΎΠ±Π»Π΅ΠΌΡ‹ ΠΈ ΠΊΠ»ΡŽΡ‡Π΅Π²Ρ‹Π΅ направлСния ΠΈΠ½Π½ΠΎΠ²Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ развития ΠΏΡ€ΠΎΠΌΡ‹ΡˆΠ»Π΅Π½Π½ΠΎΡΡ‚ΠΈ России Π² связи с Π½Π΅ΠΎΠ±Ρ…ΠΎΠ΄ΠΈΠΌΠΎΡΡ‚ΡŒΡŽ ΡƒΠΌΠ΅Π½ΡŒΡˆΠ΅Π½ΠΈΡ зависимости Π½Π°Ρ†ΠΈΠΎΠ½Π°Π»ΡŒΠ½ΠΎΠΉ экономики ΠΎΡ‚ ситуации Π½Π° ΠΌΠΈΡ€ΠΎΠ²Ρ‹Ρ… Ρ€Ρ‹Π½ΠΊΠ°Ρ… ΡΡ‹Ρ€ΡŒΡ, Π° Ρ‚Π°ΠΊΠΆΠ΅ Π² цСлях создания условий ΠΈ стимулов для внСдрСния ΠΈ развития соврСмСнных Ρ‚Π΅Ρ…Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ, ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΡ энСргСтичСской ΠΈ экологичСской эффСктивности экономики ΠΈ ΠΏΡ€ΠΎΠΈΠ·Π²ΠΎΠ΄ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ Ρ‚Ρ€ΡƒΠ΄Π°, для развития отраслСй экономики ΠΈ производств, Π²Ρ‹ΠΏΡƒΡΠΊΠ°ΡŽΡ‰ΠΈΡ… ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ†ΠΈΡŽ с высокой Π΄ΠΎΠ»Π΅ΠΉ Π΄ΠΎΠ±Π°Π²Π»Π΅Π½Π½ΠΎΠΉ стоимости, для Ρ€Π΅Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΈΠ½Π½ΠΎΠ²Π°Ρ†ΠΈΠΎΠ½Π½Ρ‹Ρ… ΠΏΡ€ΠΎΠ΅ΠΊΡ‚ΠΎΠ² ΠΈ Π² Ρ†Π΅Π»ΠΎΠΌ – для ΠΌΠΎΠ΄Π΅Ρ€Π½ΠΈΠ·Π°Ρ†ΠΈΠΈ ΡΠΎΡ†ΠΈΠ°Π»ΡŒΠ½ΠΎ-экономичСской систСмы страны. ВыдвигаСтся ΠΈ обосновываСтся ΠΏΠΎΠ»ΠΎΠΆΠ΅Π½ΠΈΠ΅ ΠΎ Ρ‚ΠΎΠΌ, Ρ‡Ρ‚ΠΎ ΠΈΠ½Π½ΠΎΠ²Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠ΅ Ρ€Π°Π·Π²ΠΈΡ‚ΠΈΠ΅ высокотСхнологичных ΠΈ Π½Π°ΡƒΠΊΠΎΠ΅ΠΌΠΊΠΈΡ… отраслСй ΠΏΡ€ΠΎΠΌΡ‹ΡˆΠ»Π΅Π½Π½ΠΎΡΡ‚ΠΈ Π΄ΠΎΠ»ΠΆΠ½ΠΎ ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΡ‚ΡŒ Π½Π° ΠΏΠ΅Ρ€Π²ΠΎΠΌ этапС ΠΈΠΌΠΏΠΎΡ€Ρ‚ΠΎΠ·Π°ΠΌΠ΅Ρ‰Π΅Π½ΠΈΠ΅ ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ†ΠΈΠΈ, Π² ΠΏΠ΅Ρ€Π²ΡƒΡŽ ΠΎΡ‡Π΅Ρ€Π΅Π΄ΡŒ, Π² ΠΎΠ±ΠΎΡ€ΠΎΠ½Π½ΠΎ-ΠΏΡ€ΠΎΠΌΡ‹ΡˆΠ»Π΅Π½Π½ΠΎΠΌ комплСксС, Π° Π² дальнСйшСм – ΡΠΊΡΠΏΠΎΡ€Ρ‚Π½ΡƒΡŽ ΠΎΡ€ΠΈΠ΅Π½Ρ‚Π°Ρ†ΠΈΡŽ конкурСнтоспособной ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ†ΠΈΠΈ. Π’ ΡΡ‚Π°Ρ‚ΡŒΠ΅ содСрТится Π°Π½Π°Π»ΠΈΠ· ΠΎΠΏΡ‹Ρ‚Π° ΠΈΠ½Π½ΠΎΠ²Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠΉ Π΄Π΅ΡΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ ΠΈΠ½Ρ‚Π΅Π³Ρ€ΠΈΡ€ΠΎΠ²Π°Π½Π½Ρ‹Ρ… ΠΊΠΎΡ€ΠΏΠΎΡ€Π°Ρ‚ΠΈΠ²Π½Ρ‹Ρ… структур с участиСм государства ΠΏΠΎ ΡΠ»Π΅Π΄ΡƒΡŽΡ‰ΠΈΠΌ основным направлСниям: интСграция ΠΏΡ€ΠΎΠΌΡ‹ΡˆΠ»Π΅Π½Π½ΠΎΠ³ΠΎ ΠΈ финансового ΠΊΠ°ΠΏΠΈΡ‚Π°Π»Π°; концСнтрация ΠΊΠ°ΠΏΠΈΡ‚Π°Π»Π° (Ρ‡Π΅Ρ€Π΅Π· слияниС ΠΈ ΠΏΠΎΠ³Π»ΠΎΡ‰Π΅Π½ΠΈΠ΅ прСдприятий, созданиС стратСгичСских альянсов); дивСрсификация Ρ„ΠΎΡ€ΠΌ ΠΈ сфСр Π΄Π΅ΡΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ; глобализация Π΄Π΅ΡΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ (созданиС Π΄ΠΎΡ‡Π΅Ρ€Π½ΠΈΡ… прСдприятий Π² Π½Π°ΠΈΠ±ΠΎΠ»Π΅Π΅ ΠΏΡ€ΠΈΠ²Π»Π΅ΠΊΠ°Ρ‚Π΅Π»ΡŒΠ½Ρ‹Ρ… странах ΠΈ Ρ€Π°Π±ΠΎΡ‚Π°ΡŽΡ‰ΠΈΡ… Π½Π° пСрспСктивных Ρ€Ρ‹Π½ΠΊΠ°Ρ…); интСрнационализация ΠΊΠ°ΠΏΠΈΡ‚Π°Π»Π° (Ρ‡Π΅Ρ€Π΅Π· созданиС Ρ‚Ρ€Π°Π½ΡΠ½Π°Ρ†ΠΈΠΎΠ½Π°Π»ΡŒΠ½Ρ‹Ρ… ΠΊΠΎΠΌΠΏΠ°Π½ΠΈΠΉ). На основС обобщСния ΠΌΠΈΡ€ΠΎΠ²ΠΎΠ³ΠΎ ΠΎΠΏΡ‹Ρ‚Π° ΠΊΠΎΡ€ΠΏΠΎΡ€Π°Ρ‚ΠΈΠ²Π½ΠΎΠ³ΠΎ управлСния Π² государствСнных корпорациях Π² ΡΡ‚Π°Ρ‚ΡŒΠ΅ Ρ„ΠΎΡ€ΠΌΡƒΠ»ΠΈΡ€ΡƒΡŽΡ‚ΡΡ ΠΊΠ»ΡŽΡ‡Π΅Π²Ρ‹Π΅ условия ΠΈ Ρ„Π°ΠΊΡ‚ΠΎΡ€Ρ‹, ΠΎΠΏΡ€Π΅Π΄Π΅Π»ΡΡŽΡ‰ΠΈΠ΅ ΡΡ„Ρ„Π΅ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ функционирования госкомпаний Π² Ρ†Π΅Π»ΠΎΠΌ: чСткая Ρ„ΠΎΡ€ΠΌΡƒΠ»ΠΈΡ€ΠΎΠ²ΠΊΠ° Ρ†Π΅Π»Π΅ΠΉ ΠΈ Π·Π°Π΄Π°Ρ‡ государства ΠΊΠ°ΠΊ собствСнника, интСрСсы ΠΊΠΎΡ‚ΠΎΡ€ΠΎΠ³ΠΎ выходят Π·Π° Ρ€Π°ΠΌΠΊΠΈ ΠΎΠ±Ρ‹Ρ‡Π½Ρ‹Ρ… Ρ†Π΅Π»Π΅ΠΉ коммСрчСской Π΄Π΅ΡΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ; фиксация этих Ρ†Π΅Π»Π΅ΠΉ ΠΈ Π·Π°Π΄Π°Ρ‡ Π² Π½ΠΎΡ€ΠΌΠ°Ρ‚ΠΈΠ²Π½Ρ‹Ρ… Π΄ΠΎΠΊΡƒΠΌΠ΅Π½Ρ‚Π°Ρ…, Π² концСпциях ΠΈ ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ°Ρ… долгосрочного ΡΠΎΡ†ΠΈΠ°Π»ΡŒΠ½ΠΎ-экономичСского развития страны, Π² ΡΠΏΠ΅Ρ†ΠΈΠ°Π»ΡŒΠ½Ρ‹Ρ… ΡΠΎΠ³Π»Π°ΡˆΠ΅Π½ΠΈΡΡ… ΠΌΠ΅ΠΆΠ΄Ρƒ государством ΠΈ прСдприятиями госсСктора, Π° Ρ‚Π°ΠΊΠΆΠ΅ Π² уставных Π΄ΠΎΠΊΡƒΠΌΠ΅Π½Ρ‚Π°Ρ…, Π² ΠΏΡ€ΠΎΠ³Ρ€Π°ΠΌΠΌΠ½Ρ‹Ρ… ΠΈ Π±ΡŽΠ΄ΠΆΠ΅Ρ‚Π½Ρ‹Ρ… Ρ€Π°Π·Ρ€Π°Π±ΠΎΡ‚ΠΊΠ°Ρ… самих госкорпораций; созданиС систСмы администрирования госкорпораций, ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‰Π΅ΠΉ ΠΎΡΡƒΡ‰Π΅ΡΡ‚Π²ΠΈΡ‚ΡŒ Ρ€Π°Π·Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΠΊΠΎΠ½Ρ‚Ρ€ΠΎΠ»ΡŒΠ½Ρ‹Ρ… Ρ„ΡƒΠ½ΠΊΡ†ΠΈΠΉ ΠΈ Ρ„ΡƒΠ½ΠΊΡ†ΠΈΠΉ ΡƒΠΏΡ€Π°Π²Π»Π΅Π½ΠΈΠΉ, ΠΎΠ±Π΅ΡΠΏΠ΅Ρ‡ΠΈΡ‚ΡŒ ΡΠΎΠ³Π»Π°ΡΠΎΠ²Π°Π½Π½ΠΎΡΡ‚ΡŒ ΠΈ ΠΏΠΎΡΠ»Π΅Π΄ΠΎΠ²Π°Ρ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ Ρ€Π΅Π°Π»ΠΈΠ·Π°Ρ†ΠΈΠΈ ΠΏΠΎΠ»ΠΈΡ‚ΠΈΠΊΠΈ управлСния имущСством, Π΅Π΄ΠΈΠ½ΠΎΠΎΠ±Ρ€Π°Π·ΠΈΠ΅ ΠΏΡ€Π°Π²ΠΈΠ» управлСния Π³ΠΎΡΡΠΎΠ±ΡΡ‚Π²Π΅Π½Π½ΠΎΡΡ‚ΡŒΡŽ Π½Π° основС Π΅Π΄ΠΈΠ½ΠΎΠ³ΠΎ Ρ€Π΅Π³Π»Π°ΠΌΠ΅Π½Ρ‚Π°; согласованиС интСрСсов государства ΠΈ частных инвСсторов, ΠΈΡ… Π΄ΠΎΠΊΡƒΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½Π°Ρ фиксация (Π² ΠΊΠΎΡ€ΠΏΠΎΡ€Π°Ρ‚ΠΈΠ²Π½Ρ‹Ρ… ΠΏΠ»Π°Π½Π°Ρ…, Π² Π΄ΠΎΠ³ΠΎΠ²ΠΎΡ€Π°Ρ… ΠΌΠ΅ΠΆΠ΄Ρƒ этими сторонами ΠΈ Ρ‚.Π΄.) с Ρ†Π΅Π»ΡŒΡŽ ограничСния Π½Π΅ΠΎΠΏΡ€Π°Π²Π΄Π°Π½Π½ΠΎΠ³ΠΎ Π²ΠΌΠ΅ΡˆΠ°Ρ‚Π΅Π»ΡŒΡΡ‚Π²Π° государства Π² Π΄Π΅ΡΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ госкомпаний, с ΠΎΠ΄Π½ΠΎΠΉ стороны, ΠΈ Π·Π°Ρ‰ΠΈΡ‚Ρ‹ ΠΎΡ‚ лоббистских Π΄Π΅Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΉ – с Π΄Ρ€ΡƒΠ³ΠΎΠΉ; ΠΏΠΎΠ²Ρ‹ΡˆΠ΅Π½ΠΈΠ΅ прозрачности бизнСса, Ρ‡Ρ‚ΠΎ являСтся основой эффСктивного управлСния; созданиС эффСктивных систСм ΠΎΠΏΠ΅Ρ€Π°Ρ‚ΠΈΠ²Π½ΠΎΠ³ΠΎ управлСния, Π² Ρ‚ΠΎΠΌ числС систСмы цСлСполагания ΠΈ планирования, отчСтности, ΠΌΠΎΠ½ΠΈΡ‚ΠΎΡ€ΠΈΠ½Π³Π°, контроля ΠΈ ΠΎΡ†Π΅Π½ΠΊΠΈ Π΄Π΅ΡΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ прСдприятий, систСмы управлСния рисками ΠΈ раскрытия ΠΈΠ½Ρ„ΠΎΡ€ΠΌΠ°Ρ†ΠΈΠΈ

    Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

    Get PDF
    Abstract. Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~
    • …
    corecore