Did Gebser Cause the Metastasization of Sexual Harassment Under Title IX Ten Years Later

This comment will evaluate the criticism of Gebser in two novelways, now that ten years have passed since the Supreme Court issued the decision. Part II will provide pertinent background information on Title IX. Part III will identify the problem sexual harassment in educational institutions poses for this country\u27s youth. Part IV will discuss the development of Title IX sexual harassment jurisprudence, including the Gebser decision. Part V will address the foundation of the criticism fired at Gebser\u27s adoption of an actual notice and deliberate indifference standard of institutional liability from two fresh perspectives. First, the policybehind agency principals will be contrasted with the realities of public school education. Second, an empirical test will provide statistics to critically evaluate the claims of commentators. Part VI will comment on the ten-year span of cases since Gebser and offer a compromise between the solution proffered by commentators and the actual decision in Gebser

Effect of the Pauli principle on photoelectron spin transport in p+p^+ GaAs

In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maximum at a distance of about $2 \; \mu m$ from the center. This counterintuitive result reveals that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle. This causes a concentration dependence of the spin stiffness while the spin dependence of the mobility is found to be weak in doped material. The various effects which can modify spin transport in a degenerate electron gas under local laser excitation are considered. A comparison of the data with a numerical solution of the coupled diffusion equations reveals that ambipolar coupling with holes increases the steady-state photo-electron density at the excitation spot and therefore the amplitude of the degeneracy-induced polarization dip. Thermoelectric currrents are predicted to depend on spin under degeneracy (spin Soret currents), but these currents are negligible except at very high excitation power where they play a relatively small role. Coulomb spin drag and bandgap renormalization are negligible due to electrostatic screening by the hole gas

Spin dependent photoelectron tunnelling from GaAs into magnetic Cobalt

The spin dependence of the photoelectron tunnel current from free standing GaAs films into out-of- plane magnetized Cobalt films is demonstrated. The measured spin asymmetry (A) resulting from a change in light helicity, reaches +/- 6% around zero applied tunnel bias and drops to +/- 2% at a bias of -1.6 V applied to the GaAs. This decrease is a result of the drop in the photoelectron spin polarization that results from a reduction in the GaAs surface recombination velocity. The sign of A changes with that of the Cobalt magnetization direction. In contrast, on a (nonmagnetic) Gold film A ~ 0%

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time.Comment: 4 pages, 5 figure

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.Comment: 10 pages, 7 figure

Genomics knowledge and attitudes among European public health professionals. Results of a cross-sectional survey

Background The international public health (PH) community is debating the opportunity to incorporate genomic technologies into PH practice. A survey was conducted to assess attitudes of the European Public Health Association (EUPHA) members towards their role in the implementation of public health genomics (PHG), and their knowledge and attitudes towards genetic testing and the delivery of genetic services. Methods EUPHA members were invited via monthly newsletter and e-mail to take part in an online survey from February 2017 to January 2018. A descriptive analysis of knowledge and attitudes was conducted, along with a univariate and multivariate analysis of their determinants. Results Five hundred and two people completed the questionnaire, 17.9% were involved in PHG activities. Only 28.9% correctly identified all medical conditions for which there is (or not) evidence for implementing genetic testing; over 60% thought that investing in genomics may divert economic resources from social and environmental determinants of health. The majority agreed that PH professionals may play different roles in incorporating genomics into their activities. Better knowledge was associated with positive attitudes towards the use of genetic testing and the delivery of genetic services in PH (OR = 1.48; 95% CI 1.01–2.18). Conclusions Our study revealed quite positive attitudes, but also a need to increase awareness on genomics among European PH professionals. Those directly involved in PHG activities tend to have a more positive attitude and better knowledge; however, gaps are also evident in this group, suggesting the need to harmonize practice and encourage greater exchange of knowledge among professionals

Niche inheritance: a cooperative pathway to enhance cancer cell fitness though ecosystem engineering

Cancer cells can be described as an invasive species that is able to establish itself in a new environment. The concept of niche construction can be utilized to describe the process by which cancer cells terraform their environment, thereby engineering an ecosystem that promotes the genetic fitness of the species. Ecological dispersion theory can then be utilized to describe and model the steps and barriers involved in a successful diaspora as the cancer cells leave the original host organ and migrate to new host organs to successfully establish a new metastatic community. These ecological concepts can be further utilized to define new diagnostic and therapeutic areas for lethal cancers.Comment: 8 pages, 1 Table, 4 Figure

Imaging ambipolar diffusion of photocarriers in GaAs thin films

Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very low light excitation power, an increased power results in a decrease of the diffusion constant near the center of the image due to the onset of ambipolar diffusion. The results are in agreement with a numerical solution of the diffusion equations and with a physical analysis of the luminescence intensity at the centre of the image, which permits the determination of the ambipolar diffusion constant as a function of electron concentration.Comment: 5 figure

Cs-induced charge transfer on (2x4)-GaAs(001) studied by photoemission

Cesium adsorption on 2x4 GaAs (001) was studied by photoemission and low energy electron diffraction. The different Cs induced changes of the As 3d and Ga 3d core level spectra show that charge transfer is almost complete for Ga surface sites, but is negligible to surface As at a coverage smaller than 0.3 ML. The situation is opposite for a coverage larger than 0.3ML, at which transfer occurs to As but no longer to Ga. Charge transfer to As atoms leads to disordering and destabilization and induces surface conversion from the As-rich surface to the Ga-rich 4x2 one after annealing at a reduced temperature of 450 C