Switchable Anomalous Hall Effects in Polar-Stacked 2D Antiferromagnet MnBi₂Te₄

van der Waals (vdW) assembly of two-dimensional (2D) materials allows polar layer stacking to realize novel properties switchable by the induced electric polarization. Here, based on symmetry analyses and density-functional calculations, we explore the emergence of the anomalous Hall effect (AHE) in antiferromagnetic MnBi2Te4 films assembled by polar layer stacking. We demonstrate that breaking P̂T̂ symmetry in an MnBi2Te4 bilayer produces a magnetoelectric effect and a spontaneous AHE switchable by electric polarization. We find that reversible polarization at one of the interfaces in a three-layer MnBi2Te4 film drives a metal–insulator transition, as well as switching between the AHE and quantum AHE (QAHE). Finally, we predict that engineering interlayer polarization in a three-layer MnBi2Te4 film allows converting MnBi2Te4 from a trivial insulator to a Chern insulator. Overall, our work emphasizes the topological properties in 2D vdW antiferromagnets induced by polar layer stacking, which do not exist in a bulk material

Multiferroic Materials Based on Organic Transition-Metal Molecular Nanowires

We report on the density functional theory aided design of a variety of organic ferroelectric and multiferroic materials by functionalizing crystallized transition-metal molecular sandwich nanowires with chemical groups such as −F, −Cl, −CN, −NO₂, O, and −OH. Such functionalized polar wires exhibit molecular reorientation in response to an electric field. Ferroelectric polarizations as large as 23.0 μC/cm² are predicted in crystals based on fully hydroxylized sandwich nanowires. Furthermore, we find that organic nanowires formed by sandwiching transition-metal atoms in croconic and rhodizonic acids, dihydroxybenzoquinone, dichloro-dihydroxy-<i>p</i>-benzoquinone, or benzene decorated by −COOH groups exhibit ordered magnetic moments, leading to a multiferroic organometallic crystal. When crystallized through hydrogen bonds, the microscopic molecular reorientation translates into a switchable polarization through proton transfer. A giant interface magnetoelectric response that is orders of magnitude greater than previously reported for conventional oxide heterostructure interfaces is predicted

Solid-State Synapse Based on Magnetoelectrically Coupled Memristor

Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in the human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn–Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence

Imprint Control of BaTiO₃ Thin Films via Chemically Induced Surface Polarization Pinning

Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO₃ (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectric phase in BTO tunnel junctions. We conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications

Surface Electronic Structure of Hybrid Organo Lead Bromide Perovskite Single Crystals

The electronic structure and band dispersion of methylammonium lead bromide, CH₃NH₃PbBr₃, has been investigated through a combination of angle-resolved photoemission spectroscopy (ARPES) and inverse photoemission spectroscopy (IPES), as well as theoretical modeling based on density functional theory. The experimental band structures are consistent with the density functional calculations. The results demonstrate the presence of a dispersive valence band in MAPbBr₃ that peaks at the M̅ point of the surface Brillouin zone. The results also indicate that the surface termination of the CH₃NH₃PbBr₃ is the methylammonium bromide (CH₃NH₃Br) layer. We find our results support models that predict a heavier hole effective mass in the region of −0.23 to −0.26 m_e, along the Γ̅ (surface Brillouin center) to M̅ point of the surface Brillouin zone. The surface appears to be n-type as a result of an excess of lead in the surface region