Triindole-Tris-Alkynyl-Bridged Trinuclear Gold(I) Complexes for Cooperative Supramolecular Self-Assembly and Small-Molecule Solution-Processable Resistive Memories

A novel class of luminescent trinuclear alkynylgold­(I) complexes with <i>N</i>-alkyl substituted triindole ligands has been synthesized and characterized. They are found to exhibit rich photophysical and electrochemical properties. The complexes have been demonstrated to display interesting supramolecular assembly with spherical nanostructures in aqueous THF solution through a cooperative growth mechanism. The self-assembly process is shown to be mediated by the π–π stacking interactions and hydrophobic–hydrophobic interactions of the triindole moieties upon solvent modulation. These gold­(I) complexes have been employed as active materials in the fabrication of solution-processable resistive memory devices, showing promising binary memory performances with low switching threshold voltages of ca. 1.5 V, high ON/OFF current ratio of up to 10⁵, long retention time of over 10⁴ s, and excellent stability. The present work opens up a new avenue for the future design of versatile organogold­(I) complexes that could serve as multifunctional materials

A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances

A novel class of luminescent phosphole oxide-containing alkynylgold­(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold­(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10³/10⁷, and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds

A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances

A novel class of luminescent phosphole oxide-containing alkynylgold­(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold­(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10³/10⁷, and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds

Supramolecular Self-Assembly and Dual-Switch Vapochromic, Vapoluminescent, and Resistive Memory Behaviors of Amphiphilic Platinum(II) Complexes

A series of amphiphilic platinum­(II) complexes with tridentate <i>N</i>-donor ligands has been synthesized and characterized. Different supramolecular architectures are constructed using the amphiphilic molecules as the building blocks through the formation of Pt···Pt and π–π stacking interactions in aqueous media. The aggregation–​deaggregation–​aggregation self-assembly behavior together with obvious spectroscopic changes could be fine-tuned by the addition of THF in aqueous media. More interestingly, one of the complexes is found to show fast response and high selectivity toward alcohol and water vapors with good reversibility, leading to drastic color and luminescence changes, and hence unique dual switching behavior, with the water molecules readily displaced by the alcohol vapor. Rapid writing and erasure have been realized via the control of a jet or a stream of alcohol vapor flow. In addition, it has been employed as active materials in the fabrication of small-molecule solution-processable resistive memory devices, exhibiting stable and promising binary memory performance with threshold voltages of ca. 3.4 V, high ON/OFF ratios of up to 10⁵ and long retention times of over 10⁴ s. The vapochromic and vapoluminescent materials are demonstrated to have potential applications in chemosensing, logic gates, VOC monitoring, and memory functions