4,665 research outputs found
Theory of Diluted Magnetic Semiconductor Ferromagnetism
We present a theory of carrier-induced ferromagnetism in diluted magnetic
semiconductors (III_{1-x} Mn_x V) which allows for arbitrary itinerant-carrier
spin polarization and dynamic correlations. Both ingredients are essential in
identifying the system's elementary excitations and describing their
properties. We find a branch of collective modes, in addition to the spin waves
and Stoner continuum which occur in metallic ferromagnets, and predict that the
low-temperature spin stiffness is independent of the strength of the exchange
coupling between magnetic ions and itinerant carriers. We discuss the
temperature dependence of the magnetization and the heat capacity
Hole spin polarization in GaAlAs:Mn structures
A self-consistent calculation of the electronic properties of GaAlAs:Mn
magnetic semiconductor quantum well structures is performed including the
Hartree term and the sp-d exchange interaction with the Mn magnetic moments.
The spin polarization density is obtained for several structure configurations.
Available experimental results are compared with theory.Comment: 4 page
Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
We formulate a theory of doped magnetic semiconductors such as
GaMnAs which have attracted recent attention for their possible use
in spintronic applications. We solve the theory in the dynamical mean field
approximation to find the magnetic transition temperature as a function
of magnetic coupling strength and carrier density . We find that
is determined by a subtle interplay between carrier density and magnetic
coupling.Comment: 4 pages, 4 figure
Optical Conductivity of Ferromagnetic Semiconductors
The dynamical mean field method is used to calculate the frequency and
temperature dependent conductivity of dilute magnetic semiconductors.
Characteristic qualitative features are found distinguishing weak,
intermediate, and strong carrier-spin coupling and allowing quantitative
determination of important parameters defining the underlying ferromagnetic
mechanism
Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As
We present a microscopic theory of the long-wavelength magnetic properties of
the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host
semiconductor band structure, described by a six-band Kohn-Luttinger
Hamiltonian, are taken into account. We relate our quantum-mechanical
calculation to the classical micromagnetic energy functional and determine
anisotropy energies and exchange constants. We find that the exchange constant
is substantially enhanced compared to the case of a parabolic heavy-hole-band
model.Comment: 9 pages, 4 figure
Two-component approach for thermodynamic properties in diluted magnetic semiconductors
We examine the feasibility of a simple description of Mn ions in III-V
diluted magnetic semiconductors (DMSs) in terms of two species (components),
motivated by the expectation that the Mn-hole exchange couplings are widely
distributed, expecially for low Mn concentrations. We find, using distributions
indicated by recent numerical mean field studies, that the thermodynamic
properties (magnetization, susceptibility, and specific heat) cannot be fit by
a single coupling as in a homogeneous model, but can be fit well by a
two-component model with a temperature dependent number of ``strongly'' and
``weakly'' coupled spins. This suggests that a two-component description may be
a minimal model for the interpretation of experimental measurements of
thermodynamic quantities in III-V DMS systems.Comment: 10 pages, 9 figures, 1 new figure, substantial revision
Overview of the design of the ITER heating neutral beam injectors
The heating neutral beam injectors (HNBs) of ITER are designed to deliver 16.7MWof 1 MeVD0 or
0.87 MeVH0 to the ITER plasma for up to 3600 s. They will be the most powerful neutral beam\uf0a0(NB)
injectors ever, delivering higher energy NBs to the plasma in a tokamak for longer than any previous
systems have done. The design of the HNBs is based on the acceleration and neutralisation of negative
ions as the efficiency of conversion of accelerated positive ions is so low at the required energy that a
realistic design is not possible, whereas the neutralisation ofH 12 andD 12 remains acceptable ( 4856%).
The design of a long pulse negative ion based injector is inherently more complicated than that of
short pulse positive ion based injectors because:
\u2022 negative ions are harder to create so that they can be extracted and accelerated from the ion source;
\u2022 electrons can be co-extracted from the ion source along with the negative ions, and their
acceleration must be minimised to maintain an acceptable overall accelerator efficiency;
\u2022 negative ions are easily lost by collisions with the background gas in the accelerator;
\u2022 electrons created in the extractor and accelerator can impinge on the extraction and acceleration
grids, leading to high power loads on the grids;
\u2022 positive ions are created in the accelerator by ionisation of the background gas by the accelerated
negative ions and the positive ions are back-accelerated into the ion source creating a massive power
load to the ion source;
\u2022 electrons that are co-accelerated with the negative ions can exit the accelerator and deposit power on
various downstream beamline components.
The design of the ITER HNBs is further complicated because ITER is a nuclear installation which
will generate very large fluxes of neutrons and gamma rays. Consequently all the injector components
have to survive in that harsh environment. Additionally the beamline components and theNBcell,
where the beams are housed, will be activated and all maintenance will have to be performed remotely.
This paper describes the design of theHNBinjectors, but not the associated power supplies, cooling
system, cryogenic system etc, or the high voltage bushingwhich separates the vacuum of the beamline
fromthehighpressureSF6 of the high voltage (1MV) transmission line, through which the power, gas and
coolingwater are supplied to the beam source. Also themagnetic field reduction system is not described
Interlayer coupling in ferromagnetic semiconductor superlattices
We develop a mean-field theory of carrier-induced ferromagnetism in diluted
magnetic semiconductors. Our approach represents an improvement over standard
RKKY model allowing spatial inhomogeneity of the system, free-carrier spin
polarization, finite temperature, and free-carrier exchange and correlation to
be accounted for self-consistently. As an example, we calculate the electronic
structure of a MnGaAs/GaAs superlattice with alternating
ferromagnetic and paramagnetic layers and demonstrate the possibility of
semiconductor magnetoresistance systems with designed properties.Comment: 4 pages, 4 figure
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